Methods and apparatus for forming precursors
View Patent ↗This invention relates to a method of forming a precursor for chemical vapour deposition including the steps of: (a) forming metal ions at a source, (b) introducing the ions into a reaction chamber; and (c) exposing the ions to a gas or gasses within the chamber to react with the ions to form the precursor.
1. A method of forming a chemical vapour deposition (CVD) precursor within a reaction chamber, including the steps of:
(a) forming atomic-metal ions at a source located outside the reaction chamber;
(b) introducing the ions into the reaction chamber; and
(c) exposing the ions to a gas or gasses within the chamber to react with the ions to form the CVD precursors,
wherein the pressure in the chamber is less than the pressure at the source to prevent the gas or gasses from contacting the source during formation of the atomic-metal ions.
2. A method as claimed in claim 1 wherein the ions are introduced by means of a carrier gas.
3. A method as claimed in claim 1 wherein the reaction chamber is or forms part of a CVD chamber.
4. A method as claimed in claim 1 wherein the CVD precursor is stored or fed directly to a CVD chamber.
5. A method as claimed in claim 4 wherein the CVD precursor is a metallic organic compound.
6. A method as claimed in claim 1 , wherein the ions are introduced into the reaction chamber through an inlet tube that debouches into the reaction chamber.
7. A method as claimed in claim 1 , wherein the atomic-metal ions are atomic aluminum Al + ions.
8. A method as claimed in claim 1 , wherein the atomic-metal ions are atomic copper Cu + ions.
9. A method as claimed in claim 1 , wherein the atomic-metal ions are atomic titanium Ti + ions.
10. A method as claimed in claim 1 , further comprising using the CVD precursor as a reactant in a subsequent CVD deposition process.
11. A method of forming a precursor for chemical vapour deposition (CVD) precursor within a reaction chamber, comprising:
forming atomic-metal ions at a source located outside the reaction chamber;
introducing the ions into the reaction chamber;
exposing the ions to a gas or gasses within the chamber to react with the ions to form the CVD precursor; and
preventing the gas or gases from contacting the source during formation of the atomic-metal ions.
12. The method of claim 11 , wherein the ions are introduced in the reaction chamber by a carrier gas, and wherein the pressure in the reaction chamber is less than the pressure at the source.
13. The method as claimed in claim 12 , wherein the atomic-metal ions are one of atomic aluminum Al + ions, atomic copper Cu + ions, and atomic titanium Ti + ions.
14. The method as claimed in claim 13 , wherein the CVD precursor is a metallic organic compound.
15. The method as claimed in claim 14 , further comprising using the CVD precursor as a reactant in a subsequent CVD process.