Radiation plate and power semiconductor module IC package
View Patent ↗Heat dissipating plate ( 4 ) made of copper-base alloy is proposed that exhibits high degree of flatness after joining in the step of assembling power semiconductor modules, IC packages, etc., that will not crack in the solder ( 3 ) joint if subjected to heat cycles during joining or in an environment of use, and that has high heat conductivity and cost effectiveness. The heat dissipating plate ( 4 ) uses a copper-base alloy having a 0.2% yield strength of at least 300 N/mm 2 which is characterized in that the 0.2% yield strength after heating at 400° C. for 10 minutes is at least 90% of the 0.2% yield strength before heating and that said copper-base alloy has a heat conductivity of at least 350 W/m·K and contains at least one element of the group consisting of Fe, Co and Ni plus P in a total amount of 0.01–0.3%; the heat dissipating plate ( 4 ) is 10–200 mm long on each side, 0.1–5 mm thick and warped by 200 μm or less in a curved shape with a radius of curvature of at least 100 mm; this heat dissipating plate ( 4 ) exhibits high degree of flatness after the assembling step and assures improved heat dissipating performance.
1. A heat dissipating plate which comprises a copper-base alloy having a 0.2% yield strength of at least 300 N/mm 2 and a heat conductivity of at least 350 W/m·K, said alloy containing P and at least one element selected from the group consisting of Fe, Co and Ni, said P and said at least one element being in a total amount of 0.01 to 0.3 wt %, said heat dissipating plate being a square or rectangle, each side of which is 10 to 200 mm long and warped by 200 μm or less, and said heat dissipating plate being 0.1 to 5 mm thick.
2. The heat dissipating plate according to claim 1 , which is warped in a curved shape with a radius of curvature of at least 100 mm.
3. A power semiconductor module or an IC package which use the heat dissipating plate according to claim 2 .
4. A power semiconductor module or an IC package which use the heat dissipating plate according to claim 1 .
5. A heat dissipating plate which comprises a copper-base alloy having a 0.2% yield strength of at least 300 N/mm 2 and a heat conductivity of at least 350 W/m·K, wherein the 0.2% yield strength after heating at 400° C. for 10 minutes is at least 90% of the 0.2% yield strength before said heating, said alloy containing P and at least one element selected from the group consisting of Fe, Co and Ni, said P and said at least one element being in a total amount of 0.01 to 0.3 wt %, said heat dissipating plate being a square or rectangle, each side of which is 10 to 200 mm long and warped by 200 μm or less, and said heat dissipating plate being 0.1. to 5 mm thick.
6. The heat dissipating plate according to claim 5 , which is warped in a curved shape with a radius of curvature of at least 100 mm.
7. A power semiconductor module or an IC package which use the heat dissipating plate according to claim 6 .
8. A power semiconductor module or an IC package which use the heat dissipating plate according to claim 5 .
9. A heat dissipating plate which comprises a copper-base alloy having a 0.2% yield strength of at least 300 N/mm 2 , a heat conductivity of at least 350 W/m·K, and a crystal grain size after heating at 400° C. for 10 minutes being no more than 25 μm, said heat dissipating plate being a square or a rectangle, each side of which is 10 to 200 mm long, said alloy containing P and at least one element selected from the group consisting of Fe, Co and Ni, said P and said at least one element being in a total amount of 0.01 to 0.3 wt %, said heat dissipating plate being a square or a rectangle, each side of which is 10 to 200 mm long and warred by 200 μm or less, and said heat dissipating plate being 0.1 to 5 mm thick.
10. The heat dissipating plate according to claim 9 , which is warped in a curved shape with a radius of curvature of at least 100 mm.
11. A power semiconductor module or an IC package which use the heat dissipating plate according to claim 10 .
12. A power semiconductor module or an IC package which use the heat dissipating plate according to claim 9 .
13. A heat dissipating plate which is a copper-base alloy having a 0.2% yield strength of at least 300 N/mm 2 and a heat conductivity of at least 350 W/m·K, wherein the 0.2% yield strength after heating at 400° C. for 10 minutes is at least 90% of the 0.2% yield strength before said heating and the crystal grain size after said heating is no more than 25 μm, said heat dissipating plate being a square or a rectangle, each side of which is 10 to 200 mm long, said alloy containing P and at least one element selected from the group consisting of Fe, Co and Ni, said P and said at least one element being in a total amount of 0.01 to 0.3 wt %, said heat dissipating plate being a square or a rectangle, each side of which is 10 to 200 mm long and warped by 200 μm or less, and said heat dissipating plate being 0.1 to 5 mm thick.
14. The heat dissipating plate according to claim 13 , which is warped in a curved shape with a radius of curvature of at least 100 mm.
15. A power semiconductor module or an IC package which use the heat dissipating plate according to claim 14 .
16. A power semiconductor module or an IC package which use the heat dissipating plate according to claim 13 .