Mask blank and a method for producing the same
An aspect of the present invention includes a method for manufacturing a mask blank. A substrate is provided. A masking layer is formed on said substrate. At least one layer of material is formed on said substrate such that a reflectivity of a writing wavelength to a film sensitive to the writing wavelength is below 4%. Other aspects of the present invention are reflected in the detailed description, figures and claims.
1 . A method for manufacturing a mask blank comprising the actions of:
providing a substrate;
forming a masking layer on said substrate;
forming at least one layer of material on said substrate such that a reflectivity of a writing wavelength back into a film sensitive to the writing wavelength is below 4%.
2 . The method according to claim 1 , wherein said reflectivity is below 2%.
3 . The method according to claim 1 , wherein said reflectivity is below 1%.
4 . The method according to claim 1 , wherein said reflectivity is below 0.5%.
5 . The method according to claim 1 , wherein a silicon compound is facing the film sensitive to the writing wavelength.
6 . The method according to claim 1 , wherein a layer of silicon dioxide is facing the film sensitive to the writing wavelength.
7 . The method according to claim 1 , wherein the masking material comprises silicon.
8 . The method according to claim 1 , wherein said film sensitive to the writing wavelength is less than 300 nm thick.
9 . The method according to claim 1 , wherein said film sensitive to the writing wavelength is less than 200 nm thick.
10 . The method according to claim 1 , wherein said at least one layer of material comprises oxynitride.
11 . The method according to claim 1 , further comprising the action of:
exposing at least a portion of said film sensitive to the writing wavelength with a writing wavelength,
etching the exposed mask blank in a gas mixture comprising chlorine.
12 . The method according to claim 1 , further comprising the action of:
exposing at least a portion of said film sensitive to the writing wavelength with a writing wavelength,
etching the exposed mask blank in a gas mixture comprising fluorine.
13 . The method according to claim 12 , wherein the film sensitive to the writing wavelength is having low activation energy.
14 . The method according to claim 1 , wherein the film sensitive to the writing wavelength is a chemically amplified resist (CAR).
15 . The method according to claim 1 , further comprising the actions of:
Exposing at least a portion of said film sensitive to the writing wavelength with a writing wavelength,
stopping the reaction in said film sensitive to the writing wavelength by exposure to a base.
16 . The method according to claim 12 or 15 , further comprising the action of;
slowing down a reaction caused by exposure by having an ambient gas of low humidity.
17 . The method according to claim 1 , further comprising the action of;
forming a film of adhesive promoter.
18 . A method for manufacturing a mask blank comprising the actions of:
providing a substrate;
forming a masking layer on said substrate;
forming at least one layer of material on said substrate such that a surface facing a film sensitive to a writing wavelength is chemically inert.
19 . The method according to claim 18 , wherein a reflectivity of said writing wavelength back into said film sensitive to the writing wavelength is below 4%.
20 . The method according to claim 18 , wherein said reflectivity is below 2%.
21 . The method according to claim 18 , wherein said reflectivity is below 1%.
22 . The method according to claim 18 , wherein said reflectivity is below 0.5%.
23 . The method according to claim 18 , wherein a silicon compound is facing the film sensitive to the writing wavelength.
24 . The method according to claim 18 , wherein a layer of silicon dioxide is facing the film sensitive to the writing wavelength.
25 . The method according to claim 18 , wherein the masking material comprises silicon.
26 . The method according to claim 18 , wherein said film sensitive to the writing wavelength is less than 300 nm thick.
27 . The method according to claim 18 , wherein said film sensitive to the writing wavelength is less than 200 nm thick.
28 . The method according to claim 18 , wherein at least one layer of material comprises oxynitride.
29 . The method according to claim 18 , further comprising the action of:
Exposing at least a portion of said film sensitive to the writing wavelength with a writing wavelength,
etching the exposed mask blank in a gas mixture comprising chlorine.
30 . The method according to claim 18 , further comprising the action of:
exposing at least a portion of said film sensitive to the writing wavelength with a writing wavelength,
etching the exposed mask blank in a gas mixture comprising fluorine.
31 . The method according to claim 29 , wherein the film sensitive to the writing wavelength is having low activation energy.
32 . The method according to claim 18 , wherein the film sensitive to the writing wavelength is a chemically amplified resist (CAR).
33 . The method according to claim 32 , further comprising the actions of:
exposing at least a portion of said film sensitive to the writing wavelength with a writing wavelength,
stopping the reaction in said film sensitive to the writing wavelength by exposure to a base.
34 . The method according to claim 29 or 32 , further comprising the action of;
slowing down a reaction caused by exposure by having an ambient gas of low humidity.
35 . A mask blank comprising
a substrate;
a masking layer on said substrate;
at least one layer of material on said substrate such that a reflectivity of a writing wavelength back into a film sensitive to the writing wavelength is below 4%.
36 . The mask blank according to claim 35 , wherein said reflectivity is below 2%.
37 . The mask blank according to claim 35 , wherein said reflectivity is below 1%.
38 . The mask blank according to claim 35 , wherein said reflectivity is below 0.5%.
39 . The mask blank according to claim 35 , wherein a silicon compound is facing the film sensitive to the writing wavelength.
40 . The mask blank according to claim 35 , wherein a layer of silicon dioxide is facing the film sensitive to the writing wavelength.
41 . The mask blank according to claim 35 , wherein the masking material comprises silicon.
42 . The mask blank according to claim 35 , wherein said film sensitive to the writing wavelength is less than 300 nm thick.
43 . The mask blank according to claim 35 , wherein said film sensitive to the writing wavelength is less than 200 nm thick.
44 . The mask blank according to claim 35 , wherein said at least one layer of material comprises oxynitride
45 . The mask blank according to claim 35 , wherein the film sensitive to the writing wavelength is having low activation energy.
46 . The mask blank according to claim 35 , wherein the film sensitive to the writing wavelength is a chemically amplified resist (CAR).
47 . The mask blank according to claim 35 , further comprising;
a film of adhesive promoter.
48 . A mask blank comprising
a substrate;
a masking layer on said substrate;
at least one layer of material on said substrate such that a surface facing a film sensitive to a writing wavelength is chemically inert.
49 . The mask blank according to claim 48 , wherein a reflectivity of said writing wavelength back into said film sensitive to the writing wavelength is below 4%.
50 . The mask blank according to claim 48 , wherein said reflectivity is below 2%.
51 . The mask blank according to claim 48 , wherein said reflectivity is below 1%.
52 . The mask blank according to claim 48 , wherein said reflectivity is below 0.5%.
53 . The mask blank according to claim 48 , wherein a silicon compound is facing the film sensitive to the writing wavelength.
54 . The mask blank according to claim 48 , wherein a layer of silicon dioxide is facing the film sensitive to the writing wavelength.
55 . The mask blank according to claim 48 , wherein the masking material comprises silicon.
56 . The mask blank according to claim 48 , wherein said film sensitive to the writing wavelength is less than 300 nm thick.
57 . The mask blank according to claim 48 , wherein said film sensitive to the writing wavelength is less than 200 nm thick.
58 . The mask blank according to claim 48 , wherein said at least one layer of material comprises oxynitride
59 . The mask blank according to claim 48 , wherein the film sensitive to the writing wavelength is having low activation energy.
60 . The mask blank according to claim 48 , wherein the film sensitive to the writing wavelength is a chemically amplified resist (CAR).
61 . The mask blank according to claim 48 , further comprising; a film of adhesive promoter.