Semiconductor device, process for producing the same and process for producing metal compound thin film
View Patent ↗A high dielectric gate insulating film having the structure that a high-nitrogen layer, a low-nitrogen layer, and a high-nitrogen layer are layered in this order from a silicon-substrate side.
1. A semiconductor device comprising:
a semiconductor substrate;
a gate insulating film formed on the semiconductor substrate; and
a gate electrode formed on the gate insulating film, wherein
the gate insulating film is a layered film including:
a first metal compound layer containing a metal compound expressed by the chemical formula M 1 O x N 1-x ;
a second metal compound layer formed on the first metal compound layer, containing a metal compound expressed by the chemical formula M 2 O y N 1-y ; and
a third metal compound layer formed on the second metal compound layer, containing a metal compound expressed by the chemical formula M 3 O z N 1-z , where 1≧y>x≧0, 1≧y>z≧0, and M 1 , M 2 , and M 3 each independently represent an element selected from the group consisting of Hf, Zr, La, Al, Si, and Y, and
C 1 and C 3 both reach or exceed 3×10 20 atom/cm 3 , where C 1 is a maximum nitrogen concentration in the first metal compound layer, and C 3 is a maximum nitrogen concentration in the third metal compound layer.
2. The semiconductor device according to claim 1 , wherein:
1>y>x>0 and 1>y>z>0 hold; and
each of the first, second, and third metal compound layers is one selected from the group consisting of a metal oxynitride layer and a metal nitride layer.
3. The semiconductor device according to claim 1 , wherein the layered film is formed by atomic layer deposition.
4. A semiconductor device comprising:
a semiconductor substrate;
a gate insulating film formed on the semiconductor substrate; and
a gate electrode formed on the gate insulating film, wherein
the gate insulating film includes a layered film including layers expressed by the following respective formulas:
M r M′ 1-r O u N 1-u , and
M s M′ 1-s O v N 1-v ,
where 1>r>0, 1>s>0, 1≧u≧0, 1≧v≧0, and u and v are different values, and M and M′ represent different elements each selected from the group consisting of Hf, Zr, La, Al, Si, and Y.