Wire-bonded semiconductor component with reinforced inner connection metallization
Consistent with an example embodiment, there is a semiconductor component comprising a semiconductor chip made of a doped silicon substrate. The chip is doped into a semiconductor device and structured, and includes an inner connection metallization in a contact window. The inner connection metallization of said semiconductor chip is connected to the respective outer connection metallization by a wire bond connection, wherein the inner connection metallization comprises a reinforcing system having an open grid structure on the doped silicon substrate.
1. A semiconductor component comprising:
discrete semiconductor device comprising:
a silicon substrate having an emitter and a base;
the emitter having an emitter contact formed thereon, the emitter contact comprising:
a reinforcing system formed directly on the emitter in an open grid structure within an emitter contact window, wherein the open grid structure forms individual grid openings that leave portions of the emitter exposed within the emitter contact window; and
a connection metallization formed in between the open grid structure of the reinforcing system and directly on the emitter;
wherein the reinforcing system and the connection metallization have different physical properties;
the base having a base contact formed thereon, the base contact comprising:
a reinforcing system formed directly on the base in an open grid structure within a base contact window, wherein the open grid structure forms individual grid openings that leave portions of the base exposed within the base contact window; and
a connection metallization formed in between the open grid structure of the reinforcing system and directly on the base;
wherein the reinforcing system and the connection metallization have different physical properties
a leadframe having connection pins; and
a bond wire connected between the emitter contact and a connection pin of the leadframe; and
a bond wire connected between the base contact and a connection pin of the leadframe.
2. A semiconductor component as claimed in claim 1 , characterized in that the reinforcing system having an open grid structure is formed from an insulation coating.
3. A semiconductor component as claimed in claim 1 , characterized in that the grid structure is formed so as to be an open groove structure.
4. A semiconductor component as claimed in claim 1 , characterized in that the grid structure may be formed so as to be an open tube structure.
5. A semiconductor component as claimed in claim 1 , characterized in that the area of the grid structure of thermal oxide constitutes >50% of the area of the contact window.
6. A semiconductor component as claimed in claim 1 , wherein the open grid structure of the reinforcing system comprises oxide lands formed directly on the silicon substrate.