Method for manufacturing plate stacks, particularly coolers or cooler elements consisting of plate stacks

1. A method for manufacturing at least one plate stack, for the production of coolers or cooler elements for cooling electric or opto-electric components, wherein the method comprises the following process steps:

manufacturing plates of copper,

stacking of the plates to form the at least one plate stack,

joining of the plates with an application of heat at a joining temperature (TF) between 1065° C. and 1082° C. and at an atmospheric pressure in a joining or bonding process step by direct copper bonding to form a bonded plate stack,

cooling of the bonded plate stack to a temperature below the joining temperature (TF); and

placing of the bonded plate stack into a chamber for a post-treatment; and performing a hot isostatic pressing post-treatment of the bonded plate stack inside the chamber in an inert gas atmosphere at an inert gas pressure (PB) between 200 and 2000 bar, and at a post-treatment temperature (TB) that is below the joining temperature (TF).

2. The method according to claim 1 , wherein the post-treatment temperature (TB) is approximately 95 to 99% of the joining temperature (TF).

3. The method according to claim 1 , wherein the post-treatment temperature (TB) is at least 50% of the joining temperature (TF).

4. The method according to claim 1 , wherein post-treatment of the plate stack in an inert gas atmosphere is conducted at a gas pressure between 200 and 2000 bar, and at a post-treatment temperature (TB) corresponding to approximately 50-99% of the joining temperature (TF) at which all metal components of a system forming a joining connection have solidified.

5. The method according to claim 1 , wherein post-treatment of the plate stack is conducted in an inert gas atmosphere at a gas pressure between 200 and 2000 bar, and at a post-treatment temperature (TB) corresponding to approximately 50-99% of the joining temperature (TF) at which all components of a brazing metal forming a joining connection have solidified.

6. The method according to claim 1 , wherein during the post-treatment, an inert gas atmosphere formed by argon or nitrogen with a maximum oxygen content is used that amounts to approximately 300% of an oxygen content corresponding to an equilibrium oxygen partial pressure at the post-treatment temperature (TB).

7. The method according to claim 6 , wherein the oxygen content in the inert gas atmosphere is less than an oxygen partial pressure of 15×10 −6 bar.

8. The method according to claim 1 , further comprising the following process steps:

application or creation of a copper-oxide layer as joining material on the plates,

heating of the plates after stacking to a temperature between 1065 and 1082° C., and

post-treatment of the plate stack at a pressure between 200 and 2000 bar, and at a post-treatment temperature of at least 390° C. and no more than 1052° C.

9. The method according to claim 1 , further comprising the following process steps:

application or creation of a copper-oxide layer as joining material on the plates, and

heating of the plates after stacking to a temperature of 1065° C. and post-treatment of the plate stack at a pressure of 1000 bar at a post-treatment temperature of 1020° C.

10. The method according to claim 1 , wherein the joining of the plates takes place with the application of heat at a mechanic pressing force between 20 and 2500 bar.

11. The method according to claim 1 , wherein a joining material is applied to surfaces of at least some openings.