Proximity deposition
View Patent ↗The present invention provides methods for achieving substantially damage-free material deposition using charged particle (e.g., ion, electron) or light beams for generating secondary electrons to induce deposition in a gas deposition material. Among other things, some of the methods can be used to deposit, with satisfactory throughput, a protective layer over a semiconductor feature without significantly altering the feature thereby preserving it for accurate measurement. In one embodiment, the beam is directed onto an electron-source surface next to the target surface but not within it. The beam is scanned on the electron-source surface causing secondary electrons to be emitted from the electron-source surface and enter the region over the target surface to interact with deposition gas for depositing a desired amount of material onto the target surface. In this way, materials can be deposited onto a the target surface at a suitably high rate without having to expose the target surface, itself, to the beam being used to perform the material deposition. In another embodiment, the beam is directed onto a separate electron generating surface (preferably one that has a relatively high secondary electron emission coefficient) proximal to the target surface for generating the electrons to deposit the deposition material onto the target surface.
1. A method of depositing a material onto a work piece, comprising:
identifying target surface on the work piece, the target surface encompassing an area of interest;
defining an electron-source surface proximal to but substantially exclusive of the target surface;
providing deposition gas over the target surface; and
irradiating at least a portion of the electron-source surface to generate secondary electrons projecting into a region over the target surface, said secondary electrons interacting with the deposition gas to deposit a layer of deposition material onto the target surface including the area of interest, said irradiation of at least a portion of the electron-source surface being performed without substantially irradiating the target surface at least until sufficient material is deposited onto the target surface to protect the target surface from irradiation damage, the area of interest in the target surface being substantially undamaged by said irradiation.
2. The method of claim 1 , wherein the act of irradiating includes irradiating with an ion beam.
3. The method of claim 1 , wherein the act of irradiating includes irradiating with an electron beam.
4. The method of claim 1 wherein the area of interest encompasses a feature to be cross-sectionally analyzed.
5. The method of claim 4 , wherein the feature is a line feature disposed substantially along the center of a rectangular shaped target surface.
6. The method of claim 4 , wherein the work piece is a wafer having a surface with a feature to be cross-sectionally analyzed the act of identifying a target surface including defining a substantially rectangular shaped surface encompassing a portion of the feature to be analyzed.
7. The method of claim 6 , wherein the act of defining an electron-source surface includes defining a surface that substantially surrounds the target surface.
8. The method of claim 1 , wherein the act of defining an electron-source surface includes defining a surface that substantially surrounds the target surface.
9. A method of depositing a material onto a work piece,
identifying a target surface on the work piece, the target surface encompassing an area of interest that encompasses a feature to be cross-sectionally analyzed;
defining an electron-source surface proximal to but substantially exclusive of the target surface;
providing deposition gas over the target surface; and
irradiating at least a portion of the electron-source surface to generate secondary electrons projecting into a region over the target surface, said secondary electrons interacting with the deposition gas to deposit a layer of deposition material onto the target surface including the area of interest, wherein the area of interest in the target surface is not damaged by said irradiation.
10. The method of claim 9 , wherein the feature is a line feature disposed substantially along the center of a rectangular shaped target surface.
11. The method of claim 9 , wherein the work piece is a wafer having a surface with a feature to be cross-sectionally analyzed, the act of identifying a target surface includes defining a substantially rectangular shaped surface encompassing a portion of the feature to be analyzed.
12. The method of claim 11 , wherein the act of defining an electron-source surface includes defining a surface that substantially surrounds the target surface.
13. A method of depositing a material onto a work piece surface, comprising:
identifying a target surface on the work piece surface;
providing an auxiliary electron-source surface proximal to the target surface;
providing deposition gas over the target surface; and
irradiating at least a portion of the auxiliary electron source surface to generate secondary electrons that travel above the target surface to interact with the deposition gas to deposit a deposition layer over the target surface without substantially irradiating the target surface.
14. The method of claim 13 , wherein the act of providing an auxiliary electron-source includes providing an auxiliary electron-source comprising a metallic surface that is part of a device for providing the deposition gas.
15. The method of claim 13 , wherein the act of irradiating the auxiliary electron source includes irradiating it with an ion beam.
16. The method of claim 13 , wherein the act of irradiating the auxiliary electron source includes irradiating it with an electron beam.
17. The method of claim 13 wherein the target surface encompasses a feature to be cross-sectionally analyzed.
18. The method of claim 17 , wherein the feature is a line feature disposed substantially along the center of a rectangular shaped target surface.
19. The method of claim 17 , wherein the work piece is a wafer having a surface with a feature to be cross-sectionally analyzed, and the act of identifying a target surface including defining a substantially rectangular shaped surface encompassing a portion of the feature to be analyzed.
20. The method of claim 19 , wherein the act of providing an auxiliary electron-source surface includes providing a metallic surface that tracks a scanning beam around the target surface.
21. The method of claim 13 , wherein the act of defining an electron-source surface includes defining a surface that substantially surrounds the target surface.
22. A method of depositing a material onto a work piece surface, comprising:
identifying a target surface on the work piece surface the target surface encompassing a feature to be cross-sectionally analyzed;
providing an auxiliary electron-source surface proximal to the target surface;
providing deposition gas over the target surface; and
irradiating at least a portion of the auxiliary electron source surface to generate secondary electrons emitting over the target surface to interact with the deposition gas to deposit a deposition layer over the target surface.
23. The method of claim 22 , wherein the feature is a line feature disposed substantially along the center of a rectangular shaped target surface.
24. The method of claim 22 , wherein the work piece is a wafer having a surface with a feature to be cross-sectionally analyzed, and the act of identifying a target surface includes defining a substantially rectangular shaped surface encompassing a portion of the feature to be analyzed.
25. The method of claim 24 , wherein the act of providing an auxiliary electron-source surface includes providing a metallic surface that tracks a scanning beam around the target surface.