Semiconductor device with multilayer conductive structure formed on a semiconductor substrate
View Patent ↗A highly reliable semiconductor device having a multilayer structure including an insulating film, an adjacent conductive film, and a main conductive film in which adhesive fractures, voids and disconnections are unlikely to occur. Regarding main constituent elements of the adjacent conductive film and the main conductive film, lattice mismatching is made small, the melting point the adjacent conductive film is set to be not less than 1.4 times that of the main constituent element of the main conductive film, the adjacent conductive film contains at least one different kind of element, the difference between the atomic radius of an added element and that the atomic radius the adjacent conductive film is set to be not more than 10%, and/or bond energy between the added element and silicon (Si) is not less than 1.9 times that of the main constituent element of the adjacent conductive film and silicon (Si).
1. A semiconductor device comprising:
a semiconductor substrate;
a gate electrode formed on said semiconductor substrate;
a diffusion layer formed within said semiconductor substrate and corresponding to said gate electrode;
a connection layer disposed above said gate electrode through an insulating layer; and
a plug connected electrically with said connection layer and said diffusion layer,
wherein said plug comprises a main conductive film and an adjacent conductive film disposed outside of said main conductive film, and
said main conductive film includes copper as a main constituent element, and
said adjacent conductive film includes as a main constituent element at least one element selected from a group consisting of ruthenium, iridium, and osmium.
2. A semiconductor device comprising:
a semiconductor substrate;
a gate electrode formed on said semiconductor substrate;
a diffusion layer formed within said semiconductor substrate and corresponding to said gate electrode;
a connection layer disposed above said gate electrode through an insulating layer; and
a plug connected electrically with said connection layer and said diffusion layer,
wherein said plug comprises a main conductive film and an adjacent conductive film disposed outside of said main conductive film, and
said main conductive film includes copper as a main constituent element,
said adjacent conductive film includes as a main constituent element at least one element selected from a group consisting of rhodium, ruthenium, iridium, and osmium and platinum, wherein said adjacent conductive film includes as an added constituent element at least one element selected from a group consisting of palladium, cobalt, nickel and titanium.
3. A semiconductor device according to claim 2 , wherein said adjacent conductive film includes said added constituent element with said at least one element selected from a group consisting of palladium, cobalt, nickel and titanium with a concentration of not less than 0.14 at. % and not more than 25 at. %.
4. A semiconductor device comprising:
a semiconductor substrate;
a gate electrode formed on said semiconductor substrate;
a diffusion layer formed within said semiconductor substrate and corresponding to said gate electrode;
a connection layer disposed above said gate electrode through an insulating layer; and
a plug connected electrically with said connection layer and said diffusion layer,
wherein said connection layer comprises a main conductive film and an adjacent conductive film disposed outside of said main conductive film, and
said main conductive film includes copper as a main constituent element, and
said adjacent conductive film includes as a main constituent element at least one element selected from a group consisting of ruthenium, iridium, and osmium.
5. A semiconductor device comprising:
a semiconductor substrate;
a gate electrode formed on said semiconductor substrate;
a diffusion layer formed within said semiconductor substrate and corresponding to said gate electrode;
a connection layer disposed above said gate electrode through an insulating layer; and
a plug connected electrically with said connection layer and said diffusion layer,
wherein said connection layer comprises a main conductive film and an adjacent conductive film disposed outside of said main conductive film, and
said main conductive film includes copper as a main constituent element, and said adjacent conductive film includes as a main constituent element at least one element selected from a group consisting of rhodium, ruthenium, iridium, osmium and platinum, wherein said adjacent conductive film includes as an added constituent element at least one element selected from a group consisting of palladium, cobalt, nickel and titanium.
6. A semiconductor device according to claim 5 , wherein said adjacent conductive film includes said added constituent element with said at least one element selected from a group consisting of palladium, cobalt, nickel and titanium with a concentration of not less than 0.14 at. % and not more than 25 at. %.
7. A semiconductor device comprising:
a semiconductor substrate;
a gate electrode formed on said semiconductor substrate;
a diffusion layer formed within said semiconductor substrate and corresponding to said gate electrode;
a connection layer disposed above said gate electrode through an insulating layer; and
a plug connected electrically with said connection layer and said gate electrode,
wherein said plug includes copper as a main constituent element, and said gate electrode includes as a main constituent element at least one element selected from a group consisting of ruthenium, iridium, osmium and, as an added element, at least one element selected from palladium (Pd), cobalt (Co), nickel (Ni) and titanium (Ti).
8. A semiconductor device comprising:
a semiconductor substrate;
a gate electrode formed on said semiconductor substrate;
a diffusion layer formed within said semiconductor substrate and corresponding to said gate electrode;
a connection layer disposed above said gate electrode through an insulating layer; and
a plug connected electrically with said connection layer and said gate electrode,
wherein said plug includes copper as a main constituent element, and said gate electrode includes as a main constituent element at least one element selected from a group consisting of rhodium, ruthenium, iridium, osmium and platinum, wherein said gate electrode includes as an added constituent element at least one element selected from a group consisting of palladium, cobalt, nickel and titanium.
9. A semiconductor device according to claim 8 , wherein said gate electrode includes said added constituent element with said at least one element selected from a group consisting of palladium, cobalt, nickel and titanium with a concentration of not less than 0.14 at. % and not more than 25 at. %.
10. A semiconductor device comprising:
a semiconductor substrate;
a gate electrode formed on said semiconductor substrate;
a diffusion layer formed within said semiconductor substrate and corresponding to said gate electrode;
a connection layer disposed above said gate electrode through an insulating layer; and
a plug connected electrically with said connection layer and said gate electrode,
wherein said plug includes copper as a main constituent element, and said gate electrode includes a first conductive film and a second conductive film disposed at a position nearer to said plug than said first conductive film, and
said first conductive film includes silicon, and
said second conductive film includes as a main constituent element at least one element selected from a group consisting of ruthenium, iridium, osmium.
11. A semiconductor device comprising:
a semiconductor substrate;
a gate electrode formed on said semiconductor substrate;
a diffusion layer formed within said semiconductor substrate and corresponding to said gate electrode;
a connection layer disposed above said gate electrode through an insulating layer; and
a plug connected electrically with said connection layer and said gate electrode,
wherein said plug includes copper as a main constituent element, and said gate electrode includes a first conductive film and a second conductive film disposed at a position nearer to said plug than said first conductive film, and
said first conductive film includes silicon, and
said second conductive film includes as a main constituent element at least one element selected from a group consisting of rhodium, ruthenium, iridium, osmium and platinum, wherein said second conductive film includes as an added constituent element at least one element selected from a group consisting of palladium, cobalt, nickel and titanium.
12. A semiconductor device according to claim 11 , wherein said second conductive film includes said added constituent element with said at least one element selected from a group consisting of palladium, cobalt, nickel and titanium with a concentration of not less than 0.14 at. % and not more than 25 at. %.