Patent Assignment
Reel/Frame 018420/0080
Assignment of Assignor's Interest
Recorded: 2006-10-19
Received: 2006-10-19
Pages: 11
Assignor
HITACHI, LTD.
Executed: 2006-06-14
Assignee
ELPIDA MEMORY, INC.
2-1, YAESU 2-CHOME, CHUO-KU, TOKYO, JPX, JAPAN
Covered Properties
(57)
Non-Volatile Multi-Level Semiconductor Flash Memory Device and Method of Driving Same
Application:
11/418,017 →
Semiconductor Integrated Circuits with Power Reduction Mechanism
Application:
11/356,100 →
Semiconductor Memory Device
Application:
11/151,417 →
Non-Volatile Multi-Level, Semiconductor Flash Memory Device and Method of Driving Same
Application:
11/041,233 →
Semiconductor Integrated Circuits with Power Reduction Mechanism
Application:
11/004,823 →
Semiconductor Memory with Strongly Adhesive Electrode
Application:
10/923,002 →
Semiconductor integrated circuit device including trench gate transistors
Application:
10/866,018 →
Semiconductor Memory Device and Methods of Operation Thereof
Application:
10/807,272 →
Semiconductor Integrated Circuit Device and the Process of Manufacturing the Same Having Poly-Silicon Plug, Wiring Trenches and Bit Lines Formed in the Wiring Trenches Having a Width Finer Than a Predetermined Size
Application:
10/755,393 →
Semiconductor Apparatus
Application:
10/724,684 →
Semiconductor Device Including Storage Capacitor
Application:
10/669,330 →
Semiconductor Integrated Circuit Device and Manufacturing Method Thereof
Application:
10/653,889 →
Semiconductor Integrated Circuit Device and Method for Manufacturing the Same
Application:
10/642,743 →
A Semiconductor Memory Device Having Improved Arrangement for Replacing Failed Bit Lines
Application:
10/627,769 →
Semiconductor Integrated Circuits with Power Reduction Mechanism
Application:
10/626,532 →
Semiconductor Device with Multilayer Conductive Structure Formed on a Semiconductor Substrate
Application:
10/611,862 →
Non-Volatile Multi-Level Semiconductor Flash Memory Device and Method of Driving Same
Application:
10/455,409 →
Semiconductor Integrated Circuits
Application:
10/411,282 →
Semiconductor Integrated Circuit Device and Process for Manufacturing the Same
Application:
10/396,339 →
Memory System
Application:
10/294,594 →
Non-Volatile Multi-Level Semiconductor Flash Memory Device and Method of Driving Same
Application:
10/288,334 →
Semiconductor Device with Copper Wiring Connected to Storage Capacitor
Application:
10/255,714 →
A Dynamic Random Access Memory Including a Logic Circuit and an Improved Storage Capacitor Arrangement
Application:
10/231,053 →
Semiconductor Integrated Circuit Device and Process for Manufacturing the Same
Application:
10/470,573 →
Semiconductor Integrated Circuit Device and Manufacturing Method Thereof
Application:
10/227,799 →
Semiconductor Device with Multilayer Conductive Structure Formed on a Semiconductor Substrate
Application:
09/787,528 →
Memory System
Application:
10/161,634 →
Dynamic Random Access Memory with Improved Contact Arrangements
Application:
10/137,426 →
Method for Making Semiconductor Integrated Circuits
Application:
10/118,887 →
Memory Module Including Module Data Wirings Available as a Memory Access Data Bus
Application:
10/105,249 →
Semiconductor Integrated Circuits with Power Reduction Mechanism
Application:
10/103,966 →
Semiconductor Memory Device
Application:
10/097,564 →
Semiconductor Device
Application:
10/091,488 →
Semiconductor Apparatus
Application:
10/077,817 →
Semiconductor Memory Device
Application:
10/045,090 →
Semiconductor Integrated Circuit Device and Method of Activating the Same
Application:
10/040,435 →
Semiconductor Integrated Circuit Device and Method of Activating the Same
Application:
10/040,492 →
Semiconductor Integrated Circuit Device and Method of Activating the Same
Application:
10/040,452 →
Non-Volatile Multi-Level Semiconductor Flash Memory Device and Method of Driving Same
Application:
10/024,722 →
A Semiconductor Device Comprising Thin Film Transistor Comprising Conductive Film Having Tapered Edge
Application:
10/013,475 →
Semiconductor Integrated Circuit Device and Process for Manufacturing the Same
Application:
09/922,673 →
Semiconductor Memory Device Capable of Outputting and Inputting Data at High Speed
Application:
09/897,997 →
Process of Manufacturing Semiconductor Integrated Circuit Device Having an Amorphous Silicon Gate
Application:
09/891,381 →
Semiconductor Integrated Circuit Device and Method of Activating the Same
Application:
09/875,169 →
Semiconductor Memory Device
Application:
09/871,911 →
Semiconductor Integrated Circuit Device
Application:
09/842,865 →
Semiconductor Integrated Circuits with Power Reduction Mechanism
Application:
09/832,853 →
A Semiconductor Memory Device Having Improved Arrangement for Replacing Failed Bit Lines
Application:
09/811,400 →
Semiconductor Memory
Application:
09/811,536 →
Semiconductor Memory
Application:
09/810,574 →
High Speed Access Compatible Memory Module
Application:
09/803,148 →
Memory System
Application:
09/802,842 →
Semiconductor Device with Adhesion-Improvement Capacitor and Process for Producing the Device
Application:
09/800,493 →
Semiconductor Memory Device with Improved Column Selecting Operation
Application:
09/789,753 →
Semiconductor Integrated Circuit Device and the Method of Producing the Same
Application:
09/775,547 →
Semiconductor Integrated Circuit Device and Process for Manufacturing the Same
Application:
09/767,830 →
Semiconductor Integrated Circuit Device and Process for Manufacturing the Same
Application:
09/765,574 →