Method of forming an isolation film in a semiconductor device

1. A method of forming an isolation film in a semiconductor device, comprising the steps of:

forming trenches for isolation at regions where wells will be formed on a semiconductor substrate;

forming an epitaxial growth layer on the semiconductor substrate within the trench, wherein during formation of the epitaxial growth layer, a doping gas of the same kind to the well is used as source gas; and

burying the trenches with insulating films to form an isolation film.

2. The method as claimed in claim 1 , further comprising the step of implementing an ion implantation process for implanting a dopant of the same kind to the well, after the epitaxial growth layer is formed.

3. The method as claimed in claim 1 , wherein the epitaxial growth layer is formed using one of N type SiGe, P type SiGe, N type SiC, P type SiC, N type SiCGe and P type SiCGe.

4. The method as claimed in claim 2 , wherein the ion implantation process is simultaneously formed with the ion implantation process for forming the well.

5. A method of forming an isolation film in a semiconductor device, comprising the steps of:

providing a semiconductor substrate having a region where a P well will be formed and a region where a N well will be formed;

forming an oxide film and a nitride film on the semiconductor substrate;

removing portions of the nitride film and the oxide film and the semiconductor substrate below them to form first and second trenches in the region where the P well will be formed and the region where the N well will be formed, respectively;

implementing an epitaxial growth process including a doping process to form a N type epitaxial growth layer in the first trench and a P type epitaxial growth layer in the second trench; and

burying the first and second trenches with insulating films to form an isolation film.

6. The method as claimed in claim 5 , wherein the N type epitaxial growth layer is formed by simultaneously implementing an epitaxial growth process including a process of implanting ions of the same kind to the N well.

7. The method as claimed in claim 5 , wherein the N type epitaxial growth layer is formed by implementing a process of implanting ions of the same kind to the N well after the epitaxial growth process is performed.

8. The method as claimed in claim 5 , wherein the P type epitaxial growth layer is formed by simultaneously implementing an epitaxial growth process including a process of implanting ions of the same kind to the P well.

9. The method as claimed in claim 5 , wherein the P type epitaxial growth layer is formed by implementing a process of implanting ions of the same kind to the P well after the epitaxial growth process is performed.

10. The method as claimed in claim 6 , wherein the doping concentration of the N type epitaxial growth layer is higher than those of the N well.

11. The method as claimed in claim 7 , wherein the doping concentration of the N type epitaxial growth layer is higher than those of the N well.

12. The method as claimed in claim 8 , wherein the doping concentration of the P type epitaxial growth layer is higher than those of the P well.

13. The method as claimed in claim 9 , wherein the doping concentration of the P type epitaxial growth layer is higher than those of the P well.

14. The method as claimed in claim 6 , wherein energy is changed upon the ion implantation process so that distribution of the doping concentration in the doping process is advertently differentiated toward the semiconductor substrate facing the isolation insulating film, and during the doping process included in the process of forming the epitaxial growth layer, concentration distribution of the doping source gas is advertently controlled.