Electrically-programmable integrated circuit antifuses
View Patent ↗Integrated circuit antifuse circuitry is provided. A metal-oxide-semiconductor (MOS) antifuse transistor serves as an electrically-programmable antifuse. In its unprogrammed state, the antifuse transistor is off and has a relatively high resistance. During programming, the antifuse transistor is turned on which melts the underlying silicon and causes a permanent reduction in the transistor's resistance. A sensing circuit monitors the resistance of the antifuse transistor and supplies a high or low output signal accordingly. The antifuse transistor may be turned on during programming by raising the voltage at its substrate relative to its source. The substrate may be connected to ground through a resistor. The substrate may be biased by causing current to flow through the resistor. Current may be made to flow through the resistor by inducing avalanche breakdown of the drain-substrate junction or by producing Zener breakdown of external Zener diode circuitry connected to the resistor.
1. Electrically-programmable integrated circuit antifuse circuitry formed from a semiconductor, comprising:
a metal-oxide-semiconductor antifuse transistor having a drain, source, gate, and substrate, wherein the drain and substrate form a drain-substrate p-n junction in the semiconductor; and
circuitry connected to the antifuse transistor that applies a voltage to the drain that causes avalanche breakdown of the drain-substrate p-n junction and a rise in voltage at the substrate that turns the antifuse transistor on and produces sufficient current between the drain and source to melt the semiconductor and program the antifuse.
2. The electrically-programmable integrated circuit antifuse circuitry defined in claim 1 wherein the gate has only a single polysilicon layer.
3. The electrically-programmable integrated circuit antifuse circuitry defined in claim 1 further comprising sensing circuitry that senses whether the antifuse transistor has been programmed and outputs a high or low logic signal accordingly.
4. The electrically-programmable integrated circuit antifuse circuitry defined in claim 1 , wherein the antifuse transistor is used on an integrated circuit having a core power supply voltage V CC , the electrically-programmable integrated circuit antifuse transistor further comprising a charge pump that produces a programming supply voltage having a magnitude greater than V CC .
5. The electrically-programmable integrated circuit antifuse circuitry defined in claim 1 further comprising a resistor connected between the substrate and a ground.
6. The electrically-programmable integrated circuit antifuse circuitry defined in claim 1 further comprising a region of metal that electrically interconnects the gate and the source.
7. The electrically-programmable integrated circuit antifuse circuitry defined in claim 1 further comprising a resistor connected between the drain and a positive power supply voltage.
8. The electrically-programmable integrated circuit antifuse circuitry defined in claim 1 wherein the gate is electrically connected to the source, the integrated circuit antifuse circuitry further comprising:
a resistor connected between the drain and a positive power supply voltage; and
a second resistor connected between the substrate and a ground potential.
9. The electrically-programmable integrated circuit antifuse circuitry defined in claim 1 wherein the drain, source, and substrate are surrounded by an n-well isolation region.
10. Electrically-programmable integrated circuit antifuse circuitry formed from a semiconductor, comprising:
a metal-oxide-semiconductor antifuse transistor having a drain, source, gate, and substrate;
at least one Zener diode connected between the drain and substrate; and
circuitry connected to the antifuse transistor and Zener diode that applies a voltage to the drain which causes Zener breakdown of the Zener diode and a rise in voltage at the substrate that turns the antifuse transistor on and produces sufficient current between the drain and source to melt the semiconductor and program the antifuse.
11. The electrically-programmable integrated circuit antifuse circuitry defined in claim 10 wherein there are only two Zener diodes connected between the drain and substrate, wherein the two Zener diodes are connected in series.
12. The electrically-programmable integrated circuit antifuse circuitry defined in claim 10 wherein the circuitry is formed on an integrated circuit having I/O circuitry powered by an I/O power supply voltage, wherein the voltage applied to the drain that causes the Zener breakdown is the same as the I/O power supply voltage.
13. The electrically-programmable integrated circuit antifuse circuitry defined in claim 10 further comprising sensing circuitry that senses whether the antifuse transistor has been programmed and outputs a high or low logic signal accordingly.
14. The electrically-programmable integrated circuit antifuse circuitry defined in claim 10 further comprising a resistor connected between the substrate and a ground potential, wherein current through the Zener diode during Zener breakdown passes through the resistor and biases the substrate.
15. The electrically-programmable integrated circuit antifuse circuitry defined in claim 10 further comprising a region of metal that electrically interconnects the gate and the source.
16. The electrically-programmable integrated circuit antifuse circuitry defined in claim 10 further comprising a resistor connected between the drain and a positive power supply voltage.
17. The electrically-programmable integrated circuit antifuse circuitry defined in claim 10 wherein the gate is electrically connected to the source, the integrated circuit antifuse circuitry further comprising:
a resistor connected between the drain and a positive voltage; and
a second resistor connected between the substrate and a ground potential.
18. The electrically-programmable integrated circuit antifuse circuitry defined in claim 10 wherein the drain, source, and substrate are surrounded by an n-well isolation region.