Steam cleaning system and method for semiconductor process equipment
View Patent ↗Disclosed are systems and methods for removing stubborn contaminants, aluminum fluoride and aluminum chloride in particular, from components of semiconductor-processing equipment. One embodiment forces steam through small holes in a gas distribution plate to remove build up on the interior walls of the holes. A cleaning fixture disposed between the steam source and the gas distribution plate delivers the steam at increased pressures. The gas distribution plate can be immersed in water during cleaning to capture the exiting steam.
1. A method for removing reaction products of aluminum and a halogen from semiconductor process equipment, the method comprising forcing steam through holes in the semiconductor process equipment to remove the reaction products from the holes.
2. The method of claim 1 , wherein the halogen is fluorine.
3. The method of claim 1 , wherein the steam is of a steam pressure above one atmosphere.
4. The method of claim 1 , wherein the steam is of a steam temperature above 212 degrees Fahrenheit.
5. The method of claim 1 , wherein the equipment comprises a gas diffusion plate perforated with the holes.
6. The method of claim 1 , further comprising soaking the equipment prior to forcing the steam through the holes.
7. The method of claim 6 , wherein equipment is soaked in water.
8. The method of claim 6 , wherein the equipment is soaked at a pressure greater than one atmosphere.
9. The method of claim 7 , wherein the water is above 180 degrees Fahrenheit.
10. A method for removing reaction products of aluminum and a halogen from a component of semiconductor process equipment, the component having at least one component channel contaminated with the reaction product, the method comprising:
a. providing a steam source that produces steam at a pressure greater than atmospheric pressure; and
b. directing the steam through the channel, the steam removing the reaction products of aluminum and the halogen from the channel of the component of the semiconductor process equipment.
11. The method of claim 10 , wherein the halogen is fluorine.
12. The method of claim 10 , wherein the steam is of a steam temperature of above 212 degrees Fahrenheit.
13. The method of claim 10 , wherein the equipment comprises a gas diffusion plate, and wherein the channel comprises a hole perforating the diffusion plate.
14. The method of claim 10 , further comprising soaking the component prior to directing the steam through the channel.
15. The method of claim 10 , further comprising directing a reducing agent with the steam.
16. The method of claim 10 , wherein the component comprises aluminum.
17. The method of claim 10 , wherein the reaction product comprises a layer formed during a semiconductor etch process.
18. The method of claim 14 , wherein the component is soaked in water.
19. The method of claim 15 , wherein the reducing agent includes at least one of ionized hydrogen and ionized nitrogen.
20. The method of claim 17 , wherein the semiconductor process equipment processes semiconductor devices having silicon and metal layer.
21. The method of claim 18 , wherein the water is above 180 degrees Fahrenheit.
22. The method of claim 21 , wherein the equipment is soaked at a pressure greater than one atmosphere.