IP Library Granted Patent US 6,964,724
Granted Patent B2
US 6,964,724 · App. 10/665,148 · Granted Nov 15, 2005

Etching and cleaning methods and etching and cleaning apparatuses used therefor

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Quick Facts
Patent No.
US 6,964,724
App. No.
10/665,148
Granted
Nov 15, 2005
Kind
B2
Abstract

An etching/cleaning apparatus is provided, which makes it possible to effectively remove an unnecessary material or materials existing on a semiconductor wafer without damaging the device area with good controllability. The apparatus comprises (a) a rotating means for holding a semiconductor wafer and for rotating the wafer in a horizontal plane; the wafer having a device area and a surface peripheral area on its surface; the surface peripheral area being located outside the device area; and (b) an edge nozzle for emitting an etching/cleaning liquid toward a surface peripheral area of the wafer. The etching/cleaning liquid emitted from the edge nozzle selectively removes an unnecessary material existing in the surface peripheral area. The etching/cleaning liquid emitted from the edge nozzle preferably has an emission direction oriented along a rotation direction of the wafer or outward with respect to a tangent of the wafer formed near a contact point of the liquid with the surface peripheral area of the wafer. A back nozzle may be additionally provided to emit an etching/cleaning liquid toward a back center of the wafer. A surface nozzle may be additionally provided to emit a protecting liquid toward a surface center of the wafer, covering the device area to protect the same against the etching/cleaning liquid.

Claims (20)

1. An etching apparatus comprising:

a rotating means for holding a semiconductor wafer and for rotating said wafer in a horizontal plane, wherein said wafer comprises a device area and a surface peripheral area on a first surface, said surface peripheral area being located outside said device area; and

an edge nozzle for emitting an etching liquid toward the surface peripheral area of said wafer, wherein said etching liquid emitted from said edge nozzle selectively etches out an unnecessary material existing in said surface peripheral area of said wafer,

wherein said etching liquid emitted from said edge nozzle has an emission direction oriented along a rotation direction of said wafer or outward with respect to a tangent of said wafer formed near a contact point of said liquid with said surface peripheral area of said wafer, and

wherein said rotating means is of a pin-chucking type comprising first pins and second pins supported by a supporting member; said first pins and said second pins are alternately arranged along an end face of said wafer; and said first pins and said second pins are alternatively contacted with said end face of said wafer to hold said wafer and rotate said wafer synchronously with said member.

2. An etching apparatus comprising:

a rotating means for holding a semiconductor wafer and for rotating said wafer in a horizontal plane, wherein said wafer comprises a device area and a surface peripheral area on a first surface, said surface peripheral area being located outside said device area; and

an edge nozzle for emitting an etching liquid toward the surface peripheral area of said wafer, wherein said etching liquid emitted from said edge nozzle selectively etches out an unnecessary material existing in said surface peripheral area of said wafer,

wherein said etching liquid emitted from said edge nozzle has an emission direction oriented along a rotation direction of said wafer or outward with respect to a tangent of said wafer formed near a contact point of said liquid with said surface peripheral area of said wafer, and

wherein said rotating means comprises first pins and second pins supported by a supporting member; said first pins are arranged along an end face of said wafer and said second pins are arranged along said end face of said wafer; during a first period, said first pins contact said end face of said wafer to hold said wafer and rotate said wafer synchronously with said member, and said second pins do not contact said wafer; and during a second period, said second pins contact said end face of said wafer to hold said wafer and rotate said wafer synchronously with said member, and said first pins do not contact said wafer.

3. A cleaning apparatus comprising:

a rotating means for holding a semiconductor wafer and for rotating said wafer in a horizontal plane, wherein said wafer comprises a device area and a surface peripheral area on a first surface, said surface peripheral area being located outside said device area; and

an edge nozzle for emitting a cleaning liquid toward the surface peripheral area of said wafer, wherein said cleaning liquid emitted from said edge nozzle selectively removes an unnecessary material existing in said surface peripheral area of said wafer,

wherein said cleaning liquid emitted from said edge nozzle has an emission direction oriented along a rotation direction of said wafer or outward with respect to a tangent of said wafer formed near a contact point of said liquid with said surface peripheral area of said wafer, and

wherein said rotating means is of a pin-chucking type comprising first pins and second pins supported by a supporting member; said first pins and said second pins are alternately arranged along an end face of said wafer; and said first pins and said second pins are alternatively contacted with said end face of said wafer to hold said wafer and rotate said wafer synchronously with said member.

4. A cleaning apparatus comprising:

a rotating means for holding a semiconductor wafer and for rotating said wafer in a horizontal plane, wherein said wafer comprises a device area and a surface peripheral area on a first surface, said surface peripheral area being located outside said device area; and

an edge nozzle for emitting a cleaning liquid toward the surface peripheral area of said wafer, wherein said cleaning liquid emitted from said edge nozzle selectively removes an unnecessary material existing in said surface peripheral area of said wafer,

wherein said cleaning liquid emitted from said edge nozzle has an emission direction oriented along a rotation direction of said wafer or outward with respect to a tangent of said wafer formed near a contact point of said liquid with said surface peripheral area of said wafer, and

wherein said rotating means comprises first pins and second pins supported by a supporting member; said first pins are arranged along an end face of said wafer and said second pins are arranged along said end face of said wafer; during a first period, said first pins contact said end face of said wafer to hold said wafer and rotate said wafer synchronously with said member, and said second pins do not contact said wafer; and during a second period, said second pins contact said end face of said wafer to hold said wafer and rotate said wafer synchronously with said member, and said first pins do not contact said wafer.

Assignments (4)
RELEASE OF SECURITY INTEREST Recorded Jun 11, 2020
From: ROYAL BANK OF CANADA
To: TESSERA, INC.; INVENSAS BONDING TECHNOLOGIES, INC. (F/K/A ZIPTRONIX, INC.); FOTONATION CORPORATION (F/K/A DIGITALOPTICS CORPORATION AND F/K/A DIGITALOPTICS CORPORATION MEMS); INVENSAS CORPORATION; TESSERA ADVANCED TECHNOLOGIES, INC; DTS, INC.; DTS LLC; PHORUS, INC.; IBIQUITY DIGITAL CORPORATION
Reel/Frame 052920/0001 →
SECURITY INTEREST Recorded Dec 2, 2016
From: INVENSAS CORPORATION; TESSERA, INC.; TESSERA ADVANCED TECHNOLOGIES, INC.; ZIPTRONIX, INC.; DIGITALOPTICS CORPORATION; DIGITALOPTICS CORPORATION MEMS; DTS, LLC; DTS, INC.; PHORUS, INC.; IBIQUITY DIGITAL CORPORATION
To: ROYAL BANK OF CANADA, AS COLLATERAL AGENT
Reel/Frame 040797/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 13, 2014
From: RENESAS ELECTRONICS CORPORATION
To: TESSERA ADVANCED TECHNOLOGIES, INC.
Reel/Frame 032892/0212 →
CHANGE OF NAME Recorded Dec 22, 2010
From: NEC ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 025525/0136 →