Semiconductor device having sealing structure for wide gap type semiconductor chip
A semiconductor chip and connection ends of corresponding external electrode terminals are encapsulated with a glass based sealing material, and the semiconductor chip includes a wide gap semiconductor element, and the electrodes of the semiconductor chip are connected to the end portions of the external electrode terminals by a silver based brazing member and/or pressure contact.
1. A semiconductor device having a sealing structure for a semiconductor chip, comprising:
a plurality of main electrodes, at least some of the main electrodes being provided on each of at least two different main surfaces of the semiconductor chip;
a plurality of external electrodes electrically connected to the main electrodes via connection members, respectively;
a sealing member made of a glass based sealing material for encapsulating at least the semiconductor chip, the main electrodes and the connection members; and
a brazing member made of a silver based brazing material having a high fusing point, which is integrally connected between a part of the main electrodes and a part of the external electrodes,
wherein the semiconductor chip is of a wide gap type, and the fusing point of the glass based sealing material is lower than that of the silver based brazing material.
2. The semiconductor device according to claim 1 , wherein the brazing material is configured to dissipate heat to the outside.
3. A semiconductor device having a sealing structure for a semiconductor chip, comprising:
a plurality of main electrodes, at least some of the main electrodes being provided on each of at least two different main surfaces of the semiconductor chip;
a plurality of external electrodes in direct physical contact with and electrically connected to the main electrodes by pressure contact, respectively; and
a sealing member made of a glass based sealing material configured to encapsulate at least the semiconductor chip, the main electrodes and connected portions of the external electrodes,
wherein the semiconductor chip is of a wide gap type.
4. The semiconductor device according to claim 1 , wherein the semiconductor chip includes one of silicon carbide or gallium nitride.
5. The semiconductor device according to claim 3 , wherein the semiconductor chip includes one of silicon carbide or gallium nitride.
6. A semiconductor device having a sealing structure for a semiconductor chip, comprising:
a plurality of main electrodes, at least some of the main electrodes being provided on each of at least two different main surfaces of the semiconductor chip;
a plurality of external electrodes;
means for maintaining direct physical and electrical contact of at least one of the external electrodes with a corresponding at least one of the main electrodes by applying pressure thereto; and
a sealing member made of a glass based sealing material configured to encapsulate at least the semiconductor chip, the main electrodes and connected portions of the external electrodes,
wherein the semiconductor chip is of a wide gap type.
7. The semiconductor device according to claim 6 , wherein the semiconductor chip includes one of silicon carbide or gallium nitride.