Process and system for eliminating gas bubbles during electrochemical processing
View Patent ↗A method and system for preventing gas bubble formation on a selected region of a wafer surface as the surface is brought in contact with a process solution for an electrochemical process is provided. The present invention employs the process solution to prevent or remove gas bubbles from the wafer surface during or before the electrochemical processing of the wafer surface. Accordingly, during the process, the wafer surface is initially brought in proximity of the surface of the process solution. Next, a process solution flow is directed towards the selected region of the wafer surface for a predetermined time. In the following step, the selected region of the wafer surface is contacted with the process solution flow for the predetermined time to prevent bubble formation, and the wafer surface is immersed into the process solution for electrochemical processing.
1. A system for avoiding formation of gas bubbles on a selected region of a surface of a workpiece in a process chamber as the workpiece surface is brought in contact with a process solution for an electrochemical process using the process solution, comprising:
a workpiece carrier to hold and move the workpiece; and
a solution shaper having at least one high flow section to direct a process solution flow towards the selected region of the workpiece surface for a predetermined time, the solution shaper being adapted to move to bring the high flow section under the selected region of the workpiece surface, the solution shaper comprising a first shaping member and a second shaping member, wherein the shaping members are plates that are moved towards each other to form the high flow section under the selected region of the workpiece.
2. The system of claim 1 , wherein the shaping members are moved away from each other after the predetermined time to remove the high flow section and to stop directing the process solution flow.
3. The system of claim 1 , wherein the high flow section is comprised of at least one flow opening.
4. The system of claim 3 , wherein the shaping members include one or more openings that allow the process solution to flow towards the surface of the workpiece.
5. The system of claim 4 , wherein the openings are smaller than the at least one flow opening.
6. The system of claim 1 , wherein the high flow section is comprised of a slit.
7. A system for avoiding formation of gas bubbles on a selected region of a surface of a workpiece in a process chamber as the workpiece surface is brought in contact with a process solution for an electrochemical process using the process solution, comprising:
a workpiece carrier to hold and move the workpiece; and
a solution shaper having at least one high flow section to direct a process solution flow towards the selected region of the workpiece surface for a predetermined time, wherein the solution shaper is adapted to move to bring the high flow section under the selected region of the workpiece surface, and the solution shaper is a removable plate which is used during bubble removal and is removed after bubble removal.
8. The system of claim 7 , wherein the removable plate includes a plurality of flow openings in differing sizes, wherein large openings are grouped to form the high flow section.
9. The system of claim 7 , wherein the selected region is a central region of the surface of the workpiece.
10. The system of claim 7 , wherein the workpiece is a semiconductor wafer.