Lead frame and method of producing the same, and resin-encapsulated semiconductor device and method of producing the same
A resin-encapsulated semiconductor device includes a semiconductor chip, a plurality of inner leads that are connected to a group of electrodes of the semiconductor chip, respectively, and an encapsulating resin that encapsulates a connection part located between the semiconductor chip and the inner leads. Each of the inner leads includes a protruded portion provided on a surface thereof on an outer side relative to the periphery of the semiconductor chip. The protruded portion protrudes in a thickness direction and is provided with a step portion formed in its side portion. The group of electrodes of the semiconductor chip is connected to surfaces of inner portions of the inner leads located on an inner side relative to their protruded portions, through electroconductive bumps, respectively. The encapsulating resin encapsulates the semiconductor chip and the electroconductive bumps and is formed to expose surfaces of the protruded portions. The surfaces of the protruded portions that function as external terminals can be reduced in size and thereby the pitch between the external terminals can be reduced.
1. A lead frame, comprising:
a frame; and
a plurality of inner leads, extending inward from the frame,
wherein the inner lead includes a protruded portion provided on a surface of its outer portion, the protruded portion protrudes in a thickness direction so as to have a thickness larger than an inner portion of the inner lead, and at least one step portion is formed on each of an inner and outer side portions of the protruded portion.
2. The lead frame according to claim 1 , wherein each of the inner leads is tilted to a side on which the protruded portion is formed toward an inner end of the inner lead.
3. The lead frame according to claim 1 , wherein a back face of each of the inner leads, just below the protruded portion, forms the lowest part of the inner leads.
4. The lead frame according to claim 2 , wherein a back face of each of the inner leads, just below the protruded portions, forms the lowest part of the inner leads.
5. A resin-encapsulated semiconductor device, comprising:
a semiconductor chip having a group of electrodes;
a plurality of inner leads that are arranged along a periphery of the semiconductor chip and are connected to the group of electrodes of the semiconductor chip, respectively; and
an encapsulating resin that encapsulates a connection part located between the semiconductor chip and the inner leads, with a part of each of the inner leads being exposed from the encapsulating resin to form an external terminal,
wherein the inner lead includes a protruded portion provided on a surface thereof on an outer side relative to the periphery of the semiconductor chip, the protruded portion protruding in a thickness direction so as to have a thickness larger than the inner portion of the inner lead with at least one step portion formed on each of the inner and the outer side portions of the protruded portion,
the group of electrodes of the semiconductor chip is connected to surfaces of inner portions of the inner leads located on an inner side relative to their protruded portions, through electroconductive bumps, respectively, and
the encapsulating resin encapsulates the semiconductor chip and the electroconductive bumps and is formed to expose surfaces of the protruded portions.
6. The resin-encapsulated semiconductor device according to claim 5 ,
wherein the semiconductor chip includes a first semiconductor chip and a second semiconductor chip that is stacked on a surface of the first semiconductor chip and has a smaller size than that of the first semiconductor chip,
the protruded portions of the plurality of inner leads are located on an outer side relative to a periphery of the first semiconductor chip,
a first group of electrodes of the first semiconductor chip is connected with the surfaces of the inner portions of the inner leads located on the inner side relative to their protruded portions, through first electroconductive bumps, respectively,
the second semiconductor chip is disposed within a region surrounded by inner ends of the plurality of inner Leads and is connected electrically with a second group of electrodes of the first semiconductor chip through second electroconductive bumps, and
the encapsulating resin encapsulates surfaces of the first and second semiconductor chips and the first and second electroconductive bumps.
7. The resin-encapsulated semiconductor device according to claim 5 , wherein the surfaces of the protruded portions and an outer face of the encapsulating resin are substantially in the same plane.
8. The resin-encapsulated semiconductor device according to claim 5 , wherein a back face of the semiconductor chip and an outer face of the encapsulating resin are substantially in the same plane.
9. The resin-encapsulated semiconductor device according to claim 5 , wherein back faces of the inner leads and an outer face of the encapsulating resin are substantially in the same plane.
10. The resin-encapsulated semiconductor device according to claim 5 , wherein the inner lead is tilted gradually to a side on which the protruded portion is formed, toward an inner end of the inner lead.
11. The resin-encapsulated semiconductor device according to claim 5 , wherein a plurality of ball electrodes are formed on the protruded portions.
12. The resin-encapsulated semiconductor device according to claim 5 , wherein an insulating thin film is formed on a part of the surface of the protruded portions of the inner leads, and a part of the surface of the protruded portion where the insulating thin film has not been formed functions as an external terminal.
13. A resin-encapsulated semiconductor device, wherein a plurality of resin encapsulated semiconductor devices according to claim 5 are stacked on top of each other, and in adjacent pairs, back faces of inner leads of one are connected electrically with surfaces of protruded portions of an other.
14. The resin-encapsulated semiconductor device according to claim 13 , wherein at least three resin-encapsulated semiconductor devices are stacked on top of each other.