Structure and method for forming a dielectric chamber and electronic device including the dielectric chamber

1. A method of forming a dielectric chamber in the vicinity of a semiconductor device area, the method comprising:

forming a dummy structure over a semiconductor substrate;

depositing a dielectric layer over the dummy structure;

forming an opening through the dielectric layer to the dummy structure; and

removing the dummy structure to form the dielectric chamber, wherein forming the dummy structure comprises forming the dummy structure using a polysilicon material.

2. The method of claim 1 , further comprising filling the dielectric chamber with a gas.

3. The method of claim 2 , wherein the gas comprises air.

4. The method of claim 2 , wherein the gas comprises an inert gas.

5. The method of claim 1 , wherein removing the dummy structure comprises using a downstream plasma etching process.

6. The method of claim 1 , further comprising depositing a dielectric layer over the semiconductor substrate before forming the dummy structure.

7. The method of claim 1 , further comprising depositing an oxide layer over the dummy structure.

8. The method of claim 7 , wherein the hole extends through the oxide layer to the dummy structure.

9. The method of claim 7 , further comprising forming a metal liner over the oxide layer.

10. A method of forming a dielectric chamber in the vicinity of a semiconductor device area, the method comprising:

forming a dummy structure over a semiconductor substrate;

depositing a dielectric layer over the dummy structure;

forming an opening through the dielectric layer to the dummy structure;

removing the dummy structure to form the dielectric chamber; and

depositing a metal layer over the dummy structure.

11. The method of claim 10 , further comprising polishing the metal layer.

12. The method of claim 1 , further comprising depositing an insulating material over the dielectric layer.

13. The method of claim 12 , further comprising depositing another dielectric layer over the insulating material.

14. The method of claim 13 , wherein the hole is formed through the another dielectric layer, the insulating layer, and the dielectric layer.

15. The method of claim 10 , further comprising:

polishing the metal layer;

depositing an insulating material over the metal layer; and

forming a contact stud through the insulating layer and the dielectric layer so that the contact stud contacts the metal layer.

16. The method of claim 1 , wherein said dielectric chamber is formed in one of the active layer, the passive layer, and the first metal layer.

17. The method of claim 1 , wherein the dummy structure is formed in multiple levels among conductive lines.

18. The method of claim 17 , wherein the conductive lines comprise a first set of conductive lines at a first level and a second set of conductive lines at a second level over the first level.

19. The method of claim 18 , wherein the second set of conductive lines cross the first set of conductive lines.