Method for fabricating a semiconductor device
View Patent ↗A method for fabricating a semiconductor device comprises the step of depositing an insulation film 32 a with a first pressure set in a deposition chamber; the step of gradually decreasing the pressure in the deposition chamber to a second pressure which is lower than the first pressure; and the step of further depositing the insulation film 32 b with the second pressure set in the deposition chamber. The insulation film is deposited with the first pressure a little lower than a second pressure set in a deposition chamber, and the insulation film is further deposited with the second pressure lower than the first pressure set in the deposition chamber. Furthermore, the insulation film is not deposited in the state where the pressure in the deposition chamber is extremely low, and an atmosphere in the deposition chamber is unstable. Thus, a semiconductor device having the insulation film with a sufficiently flat surface can be fabricating without using reflow process.
1. A method for fabricating a semiconductor device comprising:
the step of depositing an insulation film with a first pressure set in a deposition chamber;
the pressure adjusting step of decreasing a pressure gradually in the deposition chamber from a first pressure to a second pressure which is lower than the first pressure; and
the step of further depositing the insulation film with the second pressure set in the deposition chamber;
wherein in the pressure adjusting step, the pressure in the deposition chamber is gradually decreased from the first pressure to the second pressure without introduction of a raw material gas of the insulation film into the deposition chamber.
2. A method for fabricating a semiconductor device according to claim 1 , wherein
in the pressure adjusting step, a pressure in the deposition chamber is gradually decreased from the first pressure to the second pressure while an atmosphere in the deposition chamber is being replaced by an inert atmosphere.
3. A method for fabricating a semiconductor device according to claim 1 , wherein
in the pressure adjusting step, a pressure in the deposition chamber is gradually decreased at a rate smaller than 40 Torr/sec.
4. A method for fabricating a semiconductor device according to claim 3 , wherein
in the pressure adjusting step, a pressure in the deposition chamber is gradually decreased at a 5–40 Torr/sec.
5. A method for fabricating a semiconductor device according to claim 1 , which further comprises,
before the step of depositing the insulation film, the step of forming a gate electrode of a transistor on a semiconductor substrate; and
in which in the step of depositing the insulation film, the insulation film is deposited so as to cover the gate electrode.
6. A method for fabricating a semiconductor device according to claim 1 , which further comprises,
before the step of depositing the insulation film, the step of forming an interconnection layer above the semiconductor substrate; and
in which in the step of depositing the insulation film, the insulation film is deposited so as to cover the interconnection layer.
7. A method for fabricating a semiconductor device according to claim 1 , wherein
the first pressure is 400–600 Torr; and
the second pressure is 200–400 Torr.
8. A method for fabricating a semiconductor device according to claim 1 , wherein
in the step of depositing the insulation film, the insulation film is deposited by thermal chemical vapor deposition.
9. A method for fabricating a semiconductor device according to claim 1 , wherein
the insulation film is a BPSG film, a BSG film, a PSG film or an USG film.
10. A method for fabricating a semiconductor device according to claim 1 , further comprising,
after the step of further depositing the insulation film, the step of polishing the surface of the insulation film.
11. A method for fabricating a semiconductor device comprising:
the step of depositing an insulation film with a first pressure set in a deposition chamber;
the pressure adjusting step of decreasing a pressure gradually in the deposition chamber from a first pressure to a second pressure which is lower than the first pressure; and
the step of further depositing the insulation film with the second pressure set in the deposition chamber;
wherein in the pressure adjusting step, a pressure in the deposition chamber is gradually decreased at a rate smaller than 40 Torr/sec.