Flip chip light-emitting diode package
A flip chip light-emitting diode package comprising a Schottky diode group, a light-emitting diode and a plurality of bumps is provided. The Schottky diode group comprises a plurality of Schottky diodes electrically coupled in series or in parallel. The bumps are disposed between one of the Schottky diodes and the light-emitting diode so that the Schottky diode group and the light-emitting diode are connected reverse and in parallel. The light-emitting diode is disposed on one of the Schottky diodes and connected together by a flip-chip bonding process. The flip chip light-emitting diode package prevents damaging from electrostatic discharge and promotes light extraction efficiency. In addition, the submount of the Schottky diode is fabricated by using silicon material. Since silicon is an excellent material for heat dissipating, light extraction efficiency and reliability of the package is increased.
1. A flip chip light-emitting diode package, comprising:
a Schottky diode comprising;
a first conductive type submount having a first surface and a second surface;
a first ohmic contact layer, disposed on a portion of the first surface of the first conductive type submount;
a second ohmic contact layer, disposed on the second surface of the first conductive type submount; and
a Schottky contact layer, disposed on another portion of the first surface of the first conductive type submount and directly connected with the first conductive type submount, wherein the ohmic contact layer and the Schottky contact layer are electrically isolated; and
a light-emitting diode, disposed on the Schottky diode by flip-chip bonding process, wherein the light-emitting diode and the Schottky diode are connected reverse and in parallel.
2. The flip chip light-emitting diode package of claim 1 , wherein the package further comprises a plurality of solder bumps disposed between the Schottky diode and the light-emitting diode so that the Schottky diode and the light-emitting diode are connected reverse and in parallel.
3. The flip chip light-emitting diode package of claim 1 , wherein the light-emitting diode further comprises:
a substrate;
a semiconductor layer, disposed on the substrate, wherein the semiconductor layer at least comprises a first conductive type doped semiconductor layer, a second conductive type doped semiconductor layer and a light-emitting layer, and the light-emitting layer is disposed on the first conductive type doped semiconductor layer and the second conductive type doped semiconductor layer is disposed on the light-emitting layer;
a first electrode, disposed on the first conductive type doped semiconductor layer; and
a second electrode, disposed on the second conductive type doped semiconductor layer.
4. The flip chip light-emitting diode package of claim 3 , wherein material forming the first electrode is selected from a group consisting of Ti/Al, Cr/Au, Cr/Pt/Au, Cr/Pd/Au and Cr/Ti/Au.
5. The flip chip light-emitting diode package of claim 3 , wherein material forming the second electrode is selected from a group consisting of Ni/Au, Pd/Au, Pt/Au, Ti/Au, Cr/Au, Sn/Au and Ta/Au.
6. The flip chip light-emitting diode package of claim 3 , wherein the second electrode comprises an N-type transparent conductive oxide layer or a P-type transparent conductive oxide layer.
7. The flip chip light-emitting diode package of claim 6 , wherein material constituting the N-type transparent conductive oxide layer comprises ITO or CTO.
8. The flip chip light-emitting diode package of claim 6 , wherein material constituting the P-type transparent conductive oxide layer comprises CuAlO 2 or SrCu 2 O 2 .
9. The flip chip light-emitting diode package of claim 1 , wherein the first conductive type submount comprises an N-doped material.
10. The flip chip light-emitting diode package of claim 1 , wherein the first conductive type submount comprises a P-doped material.
11. The flip chip light-emitting diode package of claim 1 , wherein material forming the first conductive type submount is selected from a group consisting of Si, GaAs, GaP, GaN and ZnO.
12. The flip chip light-emitting diode package of claim 1 , wherein material forming the ohmic contact layer comprises aluminum (Al).
13. The flip chip light-emitting diode package of claim 1 , wherein material forming the Schottky contact layer is selected from a group consisting of titanium (Ti), nickel (Ni), gold (Au), tungsten (W), silver (Ag) and platinum (Pt).
14. A flip chip light-emitting diode package, comprising:
a Schottky diode group having a plurality of Schottky diodes, wherein the Schottky diodes are electrically connected in series, in parallel or in series and parallel together, each of the Schottky diodes comprises:
a first conductive type submount having a first surface and a second surface;
a first ohmic contact layer, disposed on portion of the first surface of the first conductive type submount;
a second ohmic contact layer, disposed on the second surface of the first conductive type submount; and
a Schottky contact layer, disposed on another portion of the first surface of the first conductive type submount and directly connected with the first conductive type submount, wherein the ohmic contact layer and the Schottky contact layer are electrically isolated; and
a light-emitting diode disposed on one of the Schottky diodes by flip-chip bonding process, wherein the light-emitting diode and the Schottky diode group are connected reverse and in parallel.
15. The flip chip light-emitting diode package of claim 14 , wherein the package further comprises a plurality of solder bumps disposed between one of the Schottky diodes and the light-emitting diode so that the Schottky diode and the light-emitting diode are connected reverse and in parallel.
16. The flip chip light-emitting diode package of claim 14 , wherein the light-emitting diode further comprises:
a substrate;
a semiconductor layer, disposed on the substrate, wherein the semiconductor layer at least comprises a first conductive type doped semiconductor layer, a second conductive type doped semiconductor layer and a light-emitting layer, and the light-emitting layer is disposed on the first conductive type doped semiconductor layer and the second conductive type doped semiconductor layer is disposed on the light-emitting layer;
a first electrode, disposed on the first conductive type doped semiconductor layer; and
a second electrode, disposed on the second conductive type doped semiconductor layer.
17. The flip chip light-emitting diode package of claim 16 , wherein material forming the first electrode is selected from a group consisting of Ti/Al, Cr/Au, Cr/Pt/Au, Cr/Pd/Au and Cr/Ti/Au.
18. The flip chip light-emitting diode package of claim 16 , wherein material forming the second electrode is selected from a group consisting of Ni/Au, Pd/Au, Pt/Au, Ti/Au, Cr/Au, Sn/Au and Ta/Au.
19. The flip chip light-emitting diode package of claim 16 , wherein the second electrode comprises an N-type transparent conductive oxide layer or a P-type transparent conductive oxide layer.
20. The flip chip light-emitting diode package of claim 19 , wherein material constituting the N-type transparent conductive oxide layer comprises ITO or CTO.
21. The flip chip light-emitting diode package of claim 19 , wherein material constituting the P-type transparent conductive oxide layer comprises CuAlO 2 or SrCu 2 O 2 .
22. The flip chip light-emitting diode package of claim 14 , wherein the first conductive type submount comprises an N-doped material.
23. The flip chip light-emitting diode package of claim 14 , wherein the first conductive type submount comprises a P-doped material.
24. The flip chip light-emitting diode package of claim 14 , wherein material forming the first conductive type submount is selected from a group consisting of Si, GaAs, GaP, GaN and ZnO.
25. The flip chip light-emitting diode package of claim 14 , wherein material forming the ohmic contact layer comprises aluminum (Al).
26. The flip chip light-emitting diode package of claim 14 , wherein material forming the Schottky contact layer is selected from a group consisting of titanium (Ti), nickel (Ni), gold (Au), tungsten (W), silver (Ag) and platinum (Pt).