Dummy process and polishing-pad conditioning process for chemical mechanical polishing apparatus
View Patent ↗A dummy process and a polishing-pad conditioning process suitable for a chemical mechanical polishing (CMP) is provided. The CMP apparatus includes a polishing head, a polishing table, and a polishing pad. The polishing head includes a protective hood, a base, a retaining ring and a wafer supporting assembly. The wafer is attached to an attaching surface in the wafer receiving recess. Next, the wafer supporting assembly is moved to make the bottom surface of the retaining ring more protrusive than the bottom surface of the wafer such that the wafer does not contact the surface of the polishing pad. Accordingly, the need for a large number of dummy wafers can be effectively avoided.
1. A dummy process, suitable for a chemical mechanical polishing (CMP) apparatus including a polishing head, a polishing table, and a polishing pad, wherein the polishing pad is disposed on the polishing table, the polishing head comprises a protective hood, a base, a retaining ring and a wafer supporting assembly, and wherein the base is below the protective hood, the retaining ring is fixed around a rim of the base, the wafer supporting assembly is located below and in a distance from the base, and a wafer receiving recess is defined by an inner surface of the retaining ring and the wafer supporting assembly, the dummy process comprising:
providing a wafer;
attaching the wafer onto the wafer receiving recess;
moving up the wafer supporting assembly to make the bottom surface of the retaining ring more protrusive than the bottom surface of the wafer;
moving the polishing head onto the polishing table;
pressing down the base such that the retaining ring contacts a surface of the polishing pad and the wafer does not contact the surface of the polishing pad; and
rotating the polishing table.
2. The dummy process as recited in claim 1 , wherein the wafer is a dummy wafer.
3. The dummy process as recited in claim 1 , wherein the wafer supporting assembly comprises a supporting board and a flexible membrane, the supporting board has a plurality of holes perpendicularly extending through the supporting board, and the flexible membrane is connected to and extends under the supporting board to provide an attaching surface for the wafer.
4. The dummy process as recited in claim 3 , wherein the step of attaching the wafer includes attaching the wafer to an attaching surface of the flexible membrane.
5. The dummy process as recited in claim 3 , wherein the step of moving up the wafer supporting assembly comprises creating a negative pressure within a hollow chamber between the base and the wafer supporting assembly such that an upward force is applied onto the flexible membrane.
6. The dummy process as recited in claim 5 , wherein the CMP apparatus further comprises a pump connected externally with the polishing head.
7. The dummy process as recited in claim 6 , wherein the step of creating a negative pressure within the hollow chamber further comprises using the pump to draw out gases from the chamber.
8. The dummy process as recited in claim 1 , wherein, before the step of rotating the polishing table, further comprising a step of adding polishing slurry on the polishing pad.
9. A polishing-pad conditioning process, suitable for a CMP apparatus including conditioner, a polishing head, a polishing table, and a polishing pad, wherein the polishing pad is disposed on the polishing table, the polishing head comprises a protective hood, a base, a retaining ring and a wafer supporting assembly, and wherein the base is below the protective hood, the retaining ring is fixed around a rim of the base, the wafer supporting assembly is located below and in a distance from the base, and a wafer receiving recess is defined by an inner surface of the retaining ring and the wafer supporting assembly, the polishing-pad conditioning comprising:
attaching a wafer onto the wafer receiving recess;
moving up the wafer supporting assembly to make the bottom surface of the retaining ring more protrusive than the bottom surface of the wafer;
moving the polishing head onto the polishing table;
pressing down the base such that the retaining ring contacts a surface of the polishing pad and the wafer does not contact the surface of the polishing pad; and
rotating the polishing table for conditioning contour of the polishing pad.
10. The polishing-pad conditioning process as recited in claim 9 , wherein the wafer is a dummy wafer.
11. The polishing-pad conditioning process as recited in claim 9 , wherein the wafer supporting assembly comprises a supporting board and a flexible membrane, the supporting board has a plurality of holes perpendicularly extending through the supporting board, and the flexible membrane is connected to and extends under the supporting board to provide an attaching surface for the wafer.
12. The polishing-pad conditioning process as recited in claim 11 , wherein the step of attaching the wafer includes attaching the wafer to an attaching surface of the flexible membrane.
13. The polishing-pad conditioning process as recited in claim 11 , wherein the step of moving up the wafer supporting assembly comprises creating a negative pressure within a hollow chamber between the base and the wafer supporting assembly such that an upward force is applied onto the flexible membrane.
14. The polishing-pad conditioning process as recited in claim 13 , wherein the CMP apparatus further comprises a pump connected externally with the polishing head.
15. The polishing-pad conditioning method as recited in claim 14 , wherein the step of creating a negative pressure within the hollow chamber further comprises using the pump to draw out gases from the chamber.
16. The polishing-pad conditioning process as recited in claim 9 , wherein, before the step of rotating the polishing table, further comprising a step of adding polishing slurry on the polishing pad.