Methods of manufacturing a semiconductor device
View Patent ↗Methods of manufacturing semiconductor devices are disclosed. In an illustrated method, a contact hole in an insulating layer is filled with a copper layer and the copper layer is planarized. During the planarzing, a CuO layer is parasitically formed on the surface of the copper layer. The CuO layer is removed by plasma processing using ammonia or nitrogen. A conductive CuN layer is formed on the surface of the copper layer. Stability of the removal process of CuO layer is secured.
1. A method of manufacturing a semiconductor device comprising:
forming a contact hole in an insulating layer;
filling the contact hole with a copper layer;
planarizing the copper layer;
removing a copper oxide layer parasitically formed on the copper layer, wherein removing the copper oxide layer comprises performing a plasma process using nitrogen gas, and wherein removing the copper oxide layer exposes a surface of the copper layer;
forming a copper nitride layer having a thickness of about 50 to 200 Å on the surface of the copper layer;
depositing a copper barrier layer on the insulating layer and the copper nitride layer, the copper barrier layer being a nitride layer having a thickness of about 50 to 200 Å;
depositing an upper insulating layer on the copper barrier layer; and
forming an upper contact hole in the copper barrier layer and the upper insulating layer to expose the copper nitride layer.
2. A method as defined in claim 1 , wherein the ammonia gas is introduced into a reaction chamber at a flow rate of approximately 100 sccm to 200 sccm.
3. A method as defined in claim 2 , wherein a temperature of the reaction chamber is maintained at approximately 300 to 500° C.
4. A method as defined in claim 1 , wherein removing the copper oxide layer and depositing the copper barrier layer are conducted in the same reaction chamber.
5. A method as defined in claim 1 , wherein removing the copper oxide layer comprises performing a heat treatment in an atmosphere of nitrogen gas.
6. A method as defined in claim 5 , wherein the atmosphere of nitrogen gas is introduced into a furnace at a flow rate of approximately 5 to 20 slm.
7. A method as defined in claim 6 , wherein a temperature of the furnace is maintained at approximately 400 to 600° C.