Semiconductor devices and methods of manufacturing the same
View Patent ↗An example method for fabricating a semiconductor device includes forming a well, a source region, and a drain region in a substrate, forming a gate oxide film on the substrate and coating a polysilicon film on the gate oxide film. Further, the example method includes forming a trench isolation in the substrate by a dry etching process, forming a oxide film on the inside surface of the trench isolation, providing a dielectric material to fill in the trench isolation, planarizing the dielectric material to expose the top surface of the polysilicon film, and forming a gate by dry etching the polysilicon film.
1. A method for fabricating a semiconductor device comprising:
forming a well, a source region, and a drain region in a substrate;
forming a gate oxide film on the substrate;
depositing a polysilicon film on the gate oxide film;
forming a trench isolation in the substrate by a dry etching process;
forming an oxide film on the inside surface of the trench isolation;
providing a dielectric material to fill in the trench isolation and planarizing the dielectric material to expose the top surface of the polysilicon film; and
forming a gate by dry etching the polysilicon film.
2. The method of claim 1 , wherein forming a gate by dry etching the polysilicon film includes a first etching process without a selective ratio to the dielectric material and a second etching process with a selective ratio to the dielectric material, so that the dielectric material in the trench isolation is not protruded from the gate oxide film.
3. The method of claim 1 , wherein in the trench isolation forming, the dry etching process is performed by using a photoresist pattern formed on the polysilicon film as a mask.
4. The method of claim 1 , wherein the planarizing of the dielectric material is performed by a CMP process.