Semiconductor device using shallow trench isolation and method of fabricating the same
View Patent ↗A semiconductor device adopting shallow trench isolation for reducing an internal stress of a semiconductor substrate. The semiconductor device is composed of a semiconductor substrate provided with a trench for isolation, and an insulating film formed to cover the trench for relaxing an internal stress of the semiconductor substrate. The insulating film includes a first portion disposed to be opposed to a bottom of the trench, and a second portion disposed to be opposed to a side of the trench. A first thickness of the first portion is different from a second thickness of the second portion.
1. A method of fabricating a semiconductor device comprising:
forming a trench for isolation in a semiconductor substrate; and
forming an insulating film to cover said trench for relaxing an internal stress of said semiconductor substrate, wherein said insulating film comprises:
a first portion disposed to be opposed to a bottom of said trench, and
a second portion disposed to be opposed to a side of said trench, and
wherein a first thickness of said first portion throughout is different from a second thickness of said second portion throughout, and wherein the second thickness of said second portion is substantially uniform along the entirety of said second portion.
2. The method according to claim 1 , wherein said first thickness of said first portion is thinner than said second thickness of said second portion.
3. The method according to claim 2 , further comprising:
forming another insulating film in said trench, wherein said another insulating film exerts a compressive stress on said semiconductor substrate, and said insulating film exerts a tensile stress on said semiconductor substrate.
4. The method according to claim 2 , wherein said insulating film is formed of one selected from a group consisting of silicon nitride and silicon oxynitride.
5. A method for fabricating a semiconductor device comprising:
forming a trench for isolation in a semiconductor substrate;
forming a silicon oxide film to cover said trench; and
forming an insulating film on said silicon oxide film, wherein said insulating film exerts a tensile stress on said semiconductor substrate, and
wherein said insulating film comprises:
a first portion disposed to be opposed to a bottom of said trench, and
a second portion disposed to be opposed to a side of said trench, and
wherein a first thickness of said first portion throughout is thinner than a second thickness of said second portion throughout, and wherein the second thickness of said second portion is substantially uniform along the entirety of said second portion.
6. The method according to claim 5 , wherein said insulating film is formed of one selected from a group consisting of silicon nitride and silicon oxynitride.
7. A method for fabricating a semiconductor device comprising:
forming a trench for isolation in a semiconductor substrate;
forming a silicon oxide film to cover said trench; and
forming an insulating film on said silicon oxide film, wherein said insulating film is formed of one selected from a group consisting of silicon nitride and silicon oxinitride, wherein said insulating film comprises:
a first portion disposed to be opposed to a bottom of said trench, and
a second portion disposed to be opposed to a side of said trench, and
wherein a first thickness of said first portion throughout is different from a second thickness of said second portion throughout, and wherein the second thickness of said second portion is substantially uniform along the entirety of said second portion.