Semiconductor device and method of fabricating the same
View Patent ↗The present invention is provided to a semiconductor device and a method of fabricating the same. A spacer consisting of SiCxHy or SiOCxHy having a low dielectric constant is formed at the sidewall of a trench or a hole that is formed in an interlayer insulating film. It is therefore possible to reduce the dielectric constant while reducing critical dimension loss of the trench or the hole. Therefore, the present invention has advantages that it can enhance the operating speed of the device by minimizing parasitic capacitance and prohibiting RC delay and crosstalk.
1. A method of fabricating a semiconductor device, comprising the steps of:
forming an interlayer insulating film on a semiconductor substrate in which various elements for forming the semiconductor device are formed;
forming a contact hole in the interlayer insulating film;
forming a SiCxHy film spacer at the sidewall of the contact hole; and
forming a SiOCxHy film by plasma-processing the SiCxHy film spacer.
2. The method as claimed in claim 1 , wherein the SiCxHy film is formed in PECVD equipment with a RF power in the range of 100 W to 1000 W at a temperature of 200° C. to 400° C. and a pressure of 1 to 10 Torr, while supplying an inert gas such as Ar or He.
3. The method as claimed in claim 1 , wherein the SiCxHy film spacer is formed by leaving the SiCxHy film only at the sidewall of the dual damascene pattern by means of a spacer etch process after forming the SiCxHy film on the entire surfaces of the structure.
4. The method as claimed in claim 3 , wherein the SiCxHy film is formed in PECVD equipment with a RF power in the range of 100 W to 1000 W at a temperature of 200° C. to 400° C. and a pressure of 1 to 10 Torr, while supplying an inert gas such as Ar or He.
5. The method as claimed in claim 1 , wherein the SiCxHy film is formed using 3 MS or 4 MS.
6. The method as claimed in claim 5 , wherein the SiCxHy film is formed in PECVD equipment with a RF power in the range of 100 W to 1000 W at a temperature of 200° C. to 400° C. and a pressure of 1 to 10 Torr, while supplying an inert gas such as Ar or He.
7. The method as claimed in claim 1 , wherein the plasma-processing is performed with a RF power of 100 W to 1000 W, while supplying an oxidant gas at a pressure of 1 to 10 Torr.
8. The method as claimed in claim 7 , wherein the oxidant gas is N 2 O.