Methods of preventing oxidation of barrier metal of semiconductor devices
View Patent ↗A method for preventing oxidation of a barrier metal layer of a semiconductor device is disclosed. The method includes the following steps. Ti/Ti (1-x) Al x N is deposited on the bottom and sidewalls of a via hole in a substrate by a plasma chemical vapor deposition to form a first barrier metal layer. The via hole is filled with a plug material and a planarization process is performed to form a via plug. A second barrier metal layer and a metal line are deposited in sequence on the substrate including the via plug. Then, Ti/Ti (1-x) Al x N as an ARC layer is deposited on the metal line by a plasma chemical vapor deposition. Accordingly, the present invention can improve device reliability by controlling continuous oxidation of the barrier metal layer using Ti/Ti (1-x) Al x N formed by addition of aluminum to TiN.
1. A method of preventing oxidation of a barrier metal of a semiconductor device, the method comprising:
forming a via hole in a substrate;
depositing Ti/Ti (1-x) Al x N as a first barrier metal layer on a bottom and sidewalls of the via hole by a plasma chemical vapor deposition;
filling the via hole with a plug material to form a via plug;
performing a planarization process to flatten the via plug;
depositing a second barrier metal layer and a metal line in sequence on the substrate including the via plug; and
depositing an ARC layer of Ti/Ti (1-x) Al x N on the metal line by a plasma chemical vapor deposition.
2. A method as defined by claim 1 , wherein the second barrier metal layer comprises TiN or Ti/Ti (1-x) Al x N.
3. A method as defined by claim 2 , wherein “x” in Ti/Ti (1-x) Al x N has a value between 0.5 and less than 1.
4. A method as defined by claim 1 , wherein the plug material comprises tungsten or aluminum.
5. A method as defined by claim 1 , wherein the plasma chemical vapor deposition is performed using TiCl 4 , AlCl 3 , Ar, N 2 , and H 2 gases.
6. The method as defined by claim 5 , wherein the ratio of H 2 /N 2 /Ar is between 20/5/50 sccm and 40/10/50 sccm.
7. A method as defined by claim 1 , wherein the plasma chemical vapor deposition is performed using a radio frequency (RE) power between 40 W and 60 W at a temperature between 400° C. and 500° C. under a pressure between 1 Torr and 2 Torr.
8. A method as defined by claim 1 , wherein “x” in Ti/Ti (1-x) Al x N has a value between 0.5 and less than 1.