Semiconductor devices and methods of forming a trench in a semiconductor device
View Patent ↗Semiconductor devices and methods to form a trench in a semiconductor device are disclosed. A disclosed process comprises: forming a hollow by etching a portion of a semiconductor substrate; forming a side wall layer in an inner side wall of the hollow; forming a trench by further etching the semiconductor substrate exposed through the bottom of the hollow; and filling the trench by forming an insulation film on the side wall layer and the trench.
1. A semiconductor device comprising:
a hollow formed in a semiconductor substrate, the hollow having a width;
a trench formed in the semiconductor substrate, the trench having a decreasing width, a widest point of the decreasing width being less than a narrowest point of the width of the hollow;
a side wall layer formed on an inner side wall of the hollow, the side wall layer having a thickness which is dependent upon a depth of the hollow, wherein the side wall layer has an upper portion and a lower portion, the lower portion being disposed at an obtuse angle relative to the upper portion; and
an insulation film formed on the side wall layer and the trench for filling the trench.
2. A semiconductor device as defined in claim 1 , wherein the side wall layer is formed at a predetermined height from a top surface of the semiconductor substrate.
3. A semiconductor device as defined in claim 1 , wherein a height of the side wall layer is less than a depth of the hollow.
4. A semiconductor device as defined in claim 1 , wherein the side wall layer has a width of approximately 200–400 Å measured from the inner side wall of the hollow.
5. A semiconductor device as defined in claim 1 , wherein the side wall layer comprises a silicon nitride film.
6. A semiconductor device as defined in claim 1 , wherein the insulation film comprises an oxide film.
7. A semiconductor device comprising:
a hollow formed in a semiconductor substrate, the hollow having an upper portion having a uniform width and substantially parallel side walls and a lower portion having side walls which are inwardly inclined at a substantial angle relative to a horizontal plane;
a trench formed in the semiconductor substrate beneath the hollow, the trench and the hollow being in communication;
a side wall layer formed on an inner side wall of the hollow, wherein the side wall layer has an upper portion and a lower portion, the lower portion being disposed at an obtuse angle relative to the upper portion; and
an insulation film formed on the side wall layer and the trench for filling the trench.
8. A semiconductor device as defined in claim 7 , wherein the side wall layer is formed at a predetermined height from a top surface of the semiconductor substrate.
9. A semiconductor device as defined in claim 7 , wherein a height of the side wall layer is less than a depth of the trench.
10. A semiconductor device as defined in claim 7 , wherein the side wall layer has a width of approximately 200–400 Å measured from the an inner side wall of the hollow.
11. A semiconductor device as defined in claim 7 , wherein the side wall layer comprises a silicon nitride film.
12. A semiconductor device as defined in claim 7 , wherein the insulation film comprises an oxide film.
13. A semiconductor device as defined in claim 7 , wherein a widest point of the trench is narrower than a widest point of the hollow.
14. A semiconductor device as defined in claim 7 , wherein the side wall layer has a thickness which is dependent upon a depth of the hollow.
15. A semiconductor device as defined in claim 7 , wherein the trench has a decreasing width, a widest point of the decreasing width being less than a narrowest point of a width of the hollow.