Side braze packages
View Patent ↗Side braze packages for semiconductor devices are disclosed. A disclosed side braze package includes a lead located at a sidewall of a main body having a groove. A first semiconductor chip is flip chip bonded on the groove through a solder bump. A second semiconductor chip is stacked on the first semiconductor chip. A first through hole is formed from an upper portion of the main body to a lower portion of the main body around an inner sidewall of the groove. A first line is connected to the lead through the solder bump and the first through hole. A second line is connected to the lead through the first through hole. A wire interconnects a pad of the second semiconductor to the second line.
1. A side braze package comprising:
a main body having a groove;
a lead located at a sidewall of, the main body, the lead being connectable to an external power supply;
a first semiconductor chip flip chip bonded on the groove through a solder bump;
a second semiconductor chip stacked on the first semiconductor chip;
a first through hole formed near an inner sidewall of the groove;
a first line connected to the lead through the solder bump and the first through hole;
a second line connected to the lead through the first through hole; and
a wire to connect a pad of the second semiconductor to the second line.
2. A side braze package as defined in claim 1 , wherein the groove is filled with an encapsulant.
3. A side braze package as defined in claim 1 , wherein the main body comprises a ceramic material.
4. A side braze package as defined in claim 1 , wherein the groove is punctured from an upper portion of the main body to a lower portion of the main body.
5. A side braze package as defined in claim 4 further comprising a support layer fixed at an outer sidewall of the groove, the support layer being positioned substantially parallel to the first semiconductor and supporting the first semiconductor chip.
6. A side braze package as defined in claim 5 further comprising a third semiconductor chip flip chip bonded under the support layer, and a second through hole formed from an upper portion of the main body to a lower portion of the main body near the inner side wall of the groove, wherein the first line is connected to the third semiconductor via the second through hole.
7. A side braze package as defined in claim 6 further comprising a fourth semiconductor chip stacked on the third semiconductor chip, a third through hole being formed from the upper portion of the main body to the lower portion of the main body near the inner sidewall of the groove, and a second wire interconnecting a pad of the fourth semiconductor chip with a third line of the third semiconductor chip.