Assignment of Assignor's Interest

Recorded: 2016-05-31 Pages: 6

Assignor

DSS TECHNOLOGY MANAGEMENT, INC.

Executed: 2016-05-02

Assignee

NO.8, LI-HSIN RD. 6, HSINCHU SCIENCE PARK,, HSINCHU, 30077, TAIWAN

Covered Properties (8)

Method of Making a Mos Transistor

Patent: 6,864,178 →

Application: 10/627,059 →

Thin Film Capacitor and Fabrication Method Thereof

Patent: 6,909,592 →

Application: 10/747,109 →

Publication: US 2004/0150940

Side Braze Packages

Patent: 6,903,455 →

Application: 10/748,428 →

Publication: US 2004/0207058

Semiconductor Package and Structure Thereof

Patent: 6,949,818 →

Application: 10/751,183 →

Publication: US 2004/0227220

Ceramic Packaging Method Employing Flip-Chip Bonding

Patent: 6,836,961 →

Application: 10/751,209 →

Publication: US 2004/0154164

Semiconductor Device and a Fabrication Method Thereof

Patent: 6,876,065 →

Application: 10/794,200 →

Publication: US 2004/0171275

Capacitor of Semiconductor Device and Method of Manufacturing the Same

Patent: 7,298,019 →

Application: 11/024,653 →

Publication: US 2006/0001063

Sip Semiconductor Device and Method for Manufacturing the Same

Patent: 7,531,451 →

Application: 11/781,547 →

Publication: US 2008/0029896

Related Assignments (1)

Other recorded transfers of the patents in this record — the chain of ownership.