Semiconductor device and a fabrication method thereof
View Patent ↗A semiconductor device and fabrication method thereof that uses a far ultraviolet ray photolithography, which may be used to prevent the lift phenomenon of a photoresist pattern, is disclosed. The semiconductor device may be fabricated by the process of: forming a film which is an object of forming a pattern on a structure of a semiconductor substrate; forming a anti-reflection layer on the film to form a stacking structure including the film and the anti-reflection layer; performing a plasma treatment to form grooves on a upper surface of the stacking structure; forming a photoresist pattern on the stacking structure on which the grooves are formed; and etching the stacking structure using the photoresist pattern as a mask to form a stacking structure pattern.
1. A semiconductor device comprising:
a film pattern formed on a structure of a semiconductor substrate;
an anti-reflection layer which is formed on the film pattern and has the same pattern as the film pattern and grooves thereon; and
a plurality of adjacent grooves on an upper surface of the anti-reflection layer, wherein the grooves are configured to increase adhesion between the upper surface of the anti-reflection layer and a photoresist layer.
2. The semiconductor device of claim 1 , wherein the grooves are formed by plasma treatment.
3. The semiconductor device of claim 2 , wherein the plasma treatment is performed for 15-30 seconds using N 2 O plasma.
4. The semiconductor device of claim 1 , wherein the same pattern of both film pattern and anti-reflection layer is formed by a photolithography process using a photoresist pattern formed on the anti-reflection layer as a mask and a far ultraviolet ray as a light source.
5. The semiconductor device of claim 1 , wherein the anti-reflection layer is a SiO x N y layer having thickness of 200˜300 Å.
6. The semiconductor device of claim 1 , wherein the film is a metal film.
7. The semiconductor device of claim 1 , further comprising a protective oxide layer which is formed on the anti-reflection layer and has grooves thereon.
8. The semiconductor device of claim 7 , wherein the protective oxide layer has thickness of equal to or less than 100 Å.
9. The semiconductor device of claim 7 , wherein the grooves formed on the protective oxide layer and anti-reflection layer is formed by plasma treatment performed for 15-30 seconds using N 2 O plasma.
10. A semiconductor device comprising:
a film pattern formed on a structure of a semiconductor substrate;
an anti-reflection layer which is formed on the film pattern and has the same pattern as the film pattern and grooves thereon; and
a protective oxide layer which is formed on the anti-reflection layer and has grooves thereon.
11. The semiconductor device of claim 10 , wherein the protective oxide layer has thickness of equal to or less than 100 Å.
12. The semiconductor device of claim 10 , wherein the grooves formed on the protective oxide layer and anti-reflection layer is formed by plasma treatment performed for 15-30 seconds using N 2 O plasma.