Plasma ignition method and apparatus
View Patent ↗Method and an apparatus for igniting plasma in a semiconductor manufacturing apparatus are disclosed. An example plasma ignition method and apparatus sets a predetermined pressure, source power and bias power of a chamber and flows a predetermined flow rate of CHF 3 and Ar gases into the chamber, introduces a predetermined flow rate of Cl 2 gas into the chamber, completes the supply of Cl 2 gas, and ignites plasma.
1. A plasma ignition method in a semiconductor manufacturing device, comprising:
(a) setting a predetermined pressure, source power and bias power of a chamber and flowing a predetermined flow rate of CHF 3 and Ar gases into the chamber;
(b) introducing a predetermined flow rate of Cl 2 gas into the chamber;
(c) completing the supply of Cl 2 gas prior to igniting plasma; and
(d) igniting plasma.
2. The plasma ignition method of claim 1 , wherein a pressure of the chamber in is substantially equal to the predetermined pressure.
3. The plasma ignition method of claim 2 , wherein the predetermined pressure ranges from about 6 to 8 mTorr.
4. The plasma ignition method of claim 3 , wherein the predetermined source power and bias power in the step range from about 1 to 10 watts.
5. The plasma ignition method of claim 4 , wherein the predetermined flow rate of Cl2 gas in the step ranges from about 30 to 150 sccm.
6. The plasma ignition method of claim 5 , wherein the predetermined flow rate of CHF3 gas and Ar gas range about from 0 to 30 sccm and from about 0 to 90 sccm, respectively.
7. The plasma ignition method of claim 1 , wherein (a) and (b) are completed in about 10 to 15 seconds.
8. The plasma ignition method of claim 1 , wherein the source power and the bias power are set to range about from 600 to 1000 watts and about from 100 to 200 watts, respectively.
9. A plasma ignition apparatus in a semiconductor manufacturing device, comprising:
means for setting a predetermined pressure, source power and bias power of a chamber and flowing a predetermined flow rate of CHF 3 and Ar gases into the chamber;
means for introducing a predetermined flow rate of Cl 2 into the chamber; means for completing the supply of Cl 2 gas prior to igniting plasma; and
means for igniting plasma.
10. The plasma ignition apparatus of claim 9 , wherein a pressure of the chamber is maintained at the predetermined pressure.
11. The plasma ignition apparatus of claim 10 , wherein the predetermined pressure ranges about from 6 to 8 mTorr.
12. The plasma ignition apparatus of claim 11 , wherein the predetermined source power and bias power range about from 1 to 10 watts.
13. The plasma ignition apparatus of claim 12 , wherein the predetermined flow rate of Cl 2 gas ranges about from 30 to 150 sccm.
14. The plasma ignition apparatus of claim 13 , wherein the predetermined flow rate of CHF 3 gas and Ar gas range about from 0 to 30 sccm and about from 0 to 90 sccm, respectively.
15. The plasma ignition apparatus of claim 9 , wherein the igniting means includes means for setting source power and bias power to range about from 600 to 1000 watts and about from 100 to 200 watts, respectively.
16. A plasma ignition method in a semiconductor manufacturing device, comprising:
(a) setting a predetermined pressure, source power and bias power of a chamber and flowing a predetermined flow rate of CHF 3 and Ar gases into the chamber;
(b) introducing a predetermined flow rate of Cl 2 gas into the chamber;
(c) completing the supply of Cl 2 ; and
(d) igniting plasma using residual Cl 2 gas and then pumping the Cl 2 gas out of the chamber.
17. A plasma ignition apparatus in a semiconductor manufacturing device, comprising:
means for setting a predetermined pressure, source power and bias power of a chamber and flowing a predetermined flow rate of CHF 3 and Ar gases into the chamber;
means for introducing a predetermined flow rate of Cl 2 into the chamber; means for completing the supply of Cl 2 ; and
means for igniting plasma using residual Cl 2 gas and then pumping the Cl 2 gas out of the chamber.