Inorganic compound for removing polymers in semiconductor processes
View Patent ↗An inorganic compound for removing polymers after a semiconductor etching process and related methods and apparatus are disclosed. An example compound includes DIW, H 2 SO 4 , H 2 O 2 and HF. An example method for removing polymers generated during etching processes removes the polymers by using the example compound forms a protective oxide film on at least one of a metal line, a via hole and a pad open area by using H 2 O 2 , and protects the at least one the metal line, the via hole and the pad open area by the protective oxide film while removing the polymers by using HF. An apparatus for manufacturing the example compound includes a plurality of tanks in which DIW, H 2 SO 4 , H 2 O 2 and HF are stored, respectively, a main tank for mixing DIW, H 2 SO 4 , H 2 O 2 and HF supplied from the plurality of tanks through supplying tubes connected between the main tank and the plurality of tanks, flow control devices for controlling flow rates of DIW, H 2 SO 4 , H 2 O 2 and HF, through the supplying tubes, and a pump for circulating a mixture of DIW, H 2 SO 4 , H 2 O 2 and HF stored in the main tank.
1. A method for removing polymers generated during an etching process, comprising the steps of:
removing the polymers from a metal line, a via hole, or a pad open area by using an inorganic compound including DIW, H 2 SO 4 , H 2 O 2 and HF;
forming a protective oxide film on the metal line, the via hole or the pad open area by using H 2 O 2 ; and
protecting the metal line, the via hole or the pad open area by the protective oxide film while removing the polymers by using HF,
wherein DIW occupies by volume about 70.5% to about 80.5% of the total volume of DIW, H 2 SO 4 H 2 O 2 and HF, H 2 SO 4 occupies by volume about 6.5% to about 8.5% of the total volume of DIW, H 2 SO 4 , H 2 O 2 and HF, H 2 O 2 occupies by volume about 15% to about 19% of the total volume of DIW, H 2 SO 4 , H 2 O 2 and HF, and HF occupies by volume a range of greater than 100 PPM and approximately less than or equal to 150 PPM of the total volume of DIW, H 2 SO 4 , H 2 O 2 and HF, and wherein the total volume % of DIW, H 2 SO 4 , H 2 O 2 and HF is about 100%.
2. The method of claim 1 , wherein DIW occupies by volume about 75.5% of the total volume of DIW, H 2 SO 4 , H 2 O 2 and HF.
3. The method of claim 1 , wherein H 2 SO 4 occupies by volume about 7.5% of the total volume of DIW, H 2 SO 4 H 2 O 2 and HF.
4. The method of claim 1 , wherein H 2 O 2 occupies by volume about 17% of the total volume of DIW, H 2 SO 4 , H 2 O 2 and HF.
5. The method of claim 1 , further comprising storing the DIW, the H 2 SO 4 , the H 2 O 2 and the HF in separate tanks prior to application to the semiconductor device feature.
6. The method of claim 5 , further comprising mixing the DIW, the H 2 SO 4 , the H 2 O 2 and the HF in a common tank to form the inorganic compound prior to application to the semiconductor device feature.
7. The method of claim 6 , further comprising delivering the DIW, the H 2 SO 4 , the H 2 O 2 and the HF to the common tank from the separate tanks via supplying tubes.
8. The method of claim 7 , wherein the supplying tubes comprise flow control devices that regulate the flow of the DIW, the H 2 SO 4 , the H 2 O 2 and the HF into the common tank.
9. The method of claim 8 , wherein the flow control devices deliver the DIW, the H 2 SO 4 , the H 2 O 2 and the HF at individually varied rates.
10. The method of claim 9 , wherein the common tank comprises a pump that circulates and uniformly mixes the the DIW, the H 2 SO 4 , the H 2 O 2 and the HF in the common tank.
11. The method of claim 1 , further comprising forming the metal line, the via hole, or the pad open area by an etching process using a photoresist as a mask.
12. The method of claim 11 , wherein the polymers comprise residual photoresist material.