IP Library Granted Patent US 6,943,614
Granted Patent B1
US 6,943,614 · App. 10/769,140 · Granted Sep 13, 2005

Fractional biasing of semiconductors

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Quick Facts
Patent No.
US 6,943,614
App. No.
10/769,140
Granted
Sep 13, 2005
Kind
B1
Abstract

A method and system of fractional biasing of semiconductors. A small negative voltage is applied to the back of a semiconductor wafer or device. An operating voltage is applied to the semiconductor. Operating characteristics of the semiconductor are enhanced by application of a fractional bias.

Claims (18)

1. A method of operating a semiconductor device comprising:

applying an operating voltage to said semiconductor device; and

applying a fractional negative voltage to a second surface of said semiconductor device.

2. The method of claim 1 wherein said fractional negative voltage is applied by a wafer test machine.

3. The method of claim 1 wherein said fractional negative voltage is applied to said semiconductor device within a semiconductor package.

4. The method of claim 1 wherein said fractional negative voltage is produced by said semiconductor device.

5. The method of claim 1 wherein said fractional negative voltage is less than about 50 millivolts in magnitude.

6. A method comprising:

supplying a positive voltage to a top surface of a semiconductor wafer;

testing said semiconductor wafer;

responsive to a failure of said testing, applying a fractional negative voltage to a bottom side of a substrate of said wafer; and

retesting said semiconductor wafer with said negative voltage applied to said bottom side.

7. The method of claim 6 further comprising marking said wafer with a first pass indicator in response to passing said testing.

8. The method of claim 6 further comprising marking said wafer with a second pass indicator in response to passing said retesting.

9. The method of claim 7 and further comprising binning said wafer based on said first pass indicator.

10. The method of claim 6 further comprising testing said wafer at least a third time responsive to a failure of said retesting.

11. The method of claim 6 further comprising rejecting said wafer as defective responsive to a failure of said retesting.

12. The method of claim 6 further comprising repeating said testing, applying and retesting for a plurality of wafers.

Assignments (5)
CORRECTIVE ASSIGNMENT TO CORRECT THE ASSIGNOR'S NAME PREVIOUSLY RECORDED AT REEL: 036711 FRAME: 0160. ASSIGNOR(S) HEREBY CONFIRMS THE MERGER. Recorded Oct 6, 2015
From: INTELLECTUAL VENTURES FUNDING LLC
To: INTELLECTUAL VENTURES HOLDING 81 LLC
Reel/Frame 036797/0356 →
MERGER Recorded Sep 29, 2015
From: INTELLECTUAL VENTURE FUNDING LLC
To: INTELLECTUAL VENTURES HOLDING 81 LLC
Reel/Frame 036711/0160 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 22, 2009
From: TRANSMETA LLC
To: INTELLECTUAL VENTURE FUNDING LLC
Reel/Frame 023268/0771 →
MERGER Recorded Mar 26, 2009
From: TRANSMETA CORPORATION
To: TRANSMETA LLC
Reel/Frame 022454/0522 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 3, 2008
From: KUEI, DAVID
To: TRANSMETA CORPORATION
Reel/Frame 021773/0704 →