IP Library Granted Patent US 7,015,075
Granted Patent B2
US 7,015,075 · App. 10/774,977 · Granted Mar 21, 2006

Die encapsulation using a porous carrier

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Quick Facts
Patent No.
US 7,015,075
App. No.
10/774,977
Granted
Mar 21, 2006
Kind
B2
Abstract

A process for encapsulating an integrated circuit die ( 403 ) using a porous carrier ( 101 ). In one example, an adhesive structure (e.g. tape) is applied to a porous carrier. Integrated circuit die is then placed on the adhesive structure. The integrated circuit die is then encapsulated to form an encapsulated structure ( 505 ). The carrier is then subjected to a solvent that passes through the carrier to reduce the adhesive strength of the adhesive structure for removal of the carrier from the encapsulated structure.

Claims (65)

1. A method comprising:

providing a porous carrier;

providing an adhesive structure overlying the porous carrier;

placing a first integrated circuit die over the adhesive structure;

encapsulating the first integrated circuit die to form an encapsulated structure; and

separating the porous carrier from the encapsulated structure, wherein the adhesive structure comprises an adhesive material in contact with the porous carrier, and wherein the separating the porous carrier from the encapsulated structure comprises using a solvent that is passed through the porous carrier to affect the adhesive structure.

2. The method of claim 1 , wherein the using the solvent to affect the adhesive structure comprises using the solvent to reduce adhesive strength between the porous carrier and the adhesive material of the adhesive structure.

3. The method of claim 1 , wherein the adhesive material is soluble by the solvent that is passed through the porous carrier.

4. The method of claim 1 , wherein the adhesive structure comprises tape.

5. The method of claim 1 , wherein the adhesive structure comprises photo resist.

6. The method of claim 1 , wherein the porous carrier comprises at least one material selected from a group consisting of metal, ceramic, glass, plastic, and polymer.

7. The method of claim 1 , further comprising:

prior to the encapsulating, placing a second integrated circuit die over the adhesive structure, wherein the encapsulating comprises encapsulating the first integrated circuit die and the second integrated circuit die to form the encapsulated structure.

8. The method of claim 1 , wherein after the separating the porous carrier from the encapsulated structure, the method further comprises:

providing a second adhesive structure overlying the porous carrier;

placing a second integrated circuit die over the adhesive structure;

encapsulating the second integrated circuit die to form a second encapsulated structure; and

separating the porous carrier from the second encapsulated structure.

9. The method of claim 1 , wherein the porous carrier comprises pores having a pore size diameter in a range of 0.02 microns to 30 microns.

10. The method of claim 1 , wherein the adhesive structure comprises two-sided adhesive tape.

11. The method of claim 1 , wherein the porous carrier is characterized by an open continuous porosity having at least a 0.02 microns diameter pore size.

12. The method of claim 10 , wherein the two-sided adhesive tape comprises a die side adhesive material having a thickness of at least 30 microns and a carrier side adhesive material having a thickness of at least 50 microns, wherein the carrier side adhesive material is between the die side adhesive material and the porous carrier.

13. The method of claim 11 , wherein the open continuous porosity has at most a 0.3 microns diameter pore size.

14. A method comprising:

providing a porous carrier, wherein the porous carrier comprises aluminum oxide embedded in a glass matrix;

providing an adhesive structure overlying the porous carrier;

placing a first integrated circuit die over the adhesive structure;

encapsulating the first integrated circuit die to form an encapsulated structure; and

separating the porous carrier from the encapsulated structure.

15. A method comprising:

providing a porous carrier;

adhering an adhesive structure to the porous carrier;

placing at least one integrated circuit die over the adhesive structure;

encapsulating the at least one integrated circuit die to form an encapsulated structure; and

removing the porous carrier from the encapsulated structure, wherein the removing comprises using a solvent that is passed through the porous carrier to reduce adhesive strength between the adhesive structure and the porous carrier.

16. The method of claim 15 , wherein the solvent softens at least a portion of the adhesive structure.

17. The method of claim 15 , wherein the solvent dissolves at least a portion of the adhesive structure.

18. The method of claim 15 , wherein the removing the porous carrier is preformed at a temperature below a transition temperature (Tg) of an encapsulant material used in the encapsulating.

19. The method of claim 15 , wherein the placing at least one integrated circuit die over the adhesive structure comprises placing a plurality of integrated circuit die in an array configuration over the adhesive structure, and wherein the encapsulating comprises encapsulating the plurality of integrated circuit die.

20. The method of claim 15 , wherein the porous carrier is be reusable.

21. The method of claim 15 , wherein the porous carrier comprises pores having a pore size diameter in a range of 0.02 microns to 30 microns.

22. The method of claim 15 , wherein the porous carrier comprises at least one material selected from a group consisting of metal, ceramic, glass, plastic, and polymer.

23. The method or claim 15 , wherein the using the solvent that is passed through the porous cater comprises placing at least a portion of the porous carrier into a bath having the solvent wherein the solvent is absorbed through the porous carrier via capillary action.

24. The method of claim 15 , wherein the placing the at least one integrated circuit die over the adhesive structure comprises:

placing the at least one integrated circuit die over a package substrate; and

placing the package substrate over the adhesive structure.

25. The method of claim 15 , wherein the adhesive structure comprises a tape.

26. The method of claim 15 , wherein the porous carrier is characterized by an open continuous porosity having at least a 0.02 microns diameter pore size.

27. The method of claim 25 , wherein the tape comprises a die side adhesive material having a thickness of at least 30 microns and a carrier side adhesive material having a thickness of at least 50 microns, wherein the carrier side adhesive material is in contact with the porous carrier.

28. The method of claim 26 , wherein the open continuous porosity has at most a 0.3 microns diameter pore size.

29. A method comprising:

providing a reusable porous carrier including pores with a pore size diameter of at least 0.02 microns;

adhering an adhesive structure to the reusable porous carrier;

placing a plurality of integrated circuit die in an array configuration over the adhesive structure;

encapsulating the plurality of integrated circuit die to form an encapsulated structure; and

separating the reusable porous carrier from the encapsulated structure, wherein the separating comprises using a solvent that is passed through the porous carrier to reduce adhesive strength between the adhesive structure and the reusable porous carrier.

30. The method of claim 29 , wherein after the separating, the method further comprises:

adhering a second adhesive structure to the reusable porous carrier;

placing a second plurality of integrated circuit die over the second adhesive structure;

encapsulating the second plurality of integrated circuit die to form a second encapsulated structure; and

separating the reusable porous carrier from the second encapsulated structure.

31. The method of claim 29 , wherein the reusable porous carrier comprises at least one material selected from a group consisting of metal, ceramic, glass, plastic, and polymer.

32. The method of claim 29 , wherein the reusable porous carrier comprises aluminum oxide embedded in a glass matrix.

33. The method of claim 29 , wherein the reusable porous carrier is characterized by an open continuous porosity having at most a 0.3 microns diameter pore size.

34. The method of claim 29 , wherein the separating is performed at a temperature of at most 90 degrees Celsius.

Assignments (18)
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040925 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Feb 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V. F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 052917/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040928 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Jan 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 052915/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 037486 FRAME 0517. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Dec 10, 2019
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 053547/0421 →
323.01(C) ASSIGNMENT OR CHANGE OF NAME IMPROPERLY FILED AND RECORDED BY ANOTHER PERSON AGAINST OWNER'S PATENT Recorded Oct 3, 2019
From: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
To: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Reel/Frame 052459/0656 →
CORRECTIVE ASSIGNMENT TO CORRECT THE TO CORRECT THE APPLICATION NO. FROM 13,883,290 TO 13,833,290 PREVIOUSLY RECORDED ON REEL 041703 FRAME 0536. ASSIGNOR(S) HEREBY CONFIRMS THE THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS.. Recorded Feb 20, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: SHENZHEN XINGUODU TECHNOLOGY CO., LTD.
Reel/Frame 048734/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 15, 2017
From: NORTH STAR INNOVATIONS INC.
To: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Reel/Frame 041717/0736 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE PATENTS 8108266 AND 8062324 AND REPLACE THEM WITH 6108266 AND 8060324 PREVIOUSLY RECORDED ON REEL 037518 FRAME 0292. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Feb 1, 2017
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 041703/0536 →
RELEASE OF SECURITY INTEREST Recorded Nov 7, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 040928/0001 →
RELEASE OF SECURITY INTEREST Recorded Sep 21, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V., F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 040925/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 4, 2016
From: FREESCALE SEMICONDUCTOR, INC.
To: NORTH STAR INNOVATIONS INC.
Reel/Frame 037694/0264 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 13, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037518/0292 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 12, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037486/0517 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037354/0225 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037356/0143 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037356/0553 →
SECURITY AGREEMENT Recorded Nov 6, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 031591/0266 →
SECURITY AGREEMENT Recorded Jun 18, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 030633/0424 →
SECURITY AGREEMENT Recorded May 13, 2010
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS COLLATERAL AGENT
Reel/Frame 024397/0001 →