QWIP with enhanced optical coupling
View Patent ↗A QWIP structure is disclosed that is configured with enhanced optical coupling to improve absorption capability and efficiency. A waffle-type light-coupling grating having a pattern of etched wells operates to improve absorption by preventing photons from bouncing out of the detector sensing areas. A post-type light coupling grating can also be used. Parameters of the grating, including its orientation, pitch, and etch depth, can be adjusted to optimize specific color detection. The grating can include a hybrid metal layer including both ohmic and reflective qualities to further improve quantum and conversion efficiency. A “photon-in-a-box” configuration is also disclosed, where sides of the QWIP sensing areas are coated with reflective metal to further inhibit the escaping of photons. The material design and number of quantum wells per QWIP can be selected so as to exploit the avalanche effect, thereby increasing device responsivity.
1. A photo detector array comprising:
one or more detector layers of semiconductor material, each detector layer between contact layers of semiconductor material, thereby defining a stack of layers having a front side and a back side with at least one pixel formed therein; and a waffle-type light-coupling grating formed on the backside of the stack, the grating having a pattern of wells etched out from the backside, wherein the wells reflect a substantial portion of light coming into the array so as to disperse that light through the one or more detector layers, thereby facilitating absorption, wherein a surface area of said wells is about approximately equal to a remaining surface area of said backside, and a pitch of said wells is about one wavelength of a center wavelength of interest.
2. The array of claim 1 wherein the detector layers each have a different light absorption versus wavelength response curve thereby enabling a multicolor photo detector.
3. The array of claim 1 wherein edges of the one or more detector layers are reflectively coated so as to provide, in conjunction with the waffle-type light-coupling grating, a photon-in-a-box configuration for containing light within each pixel of the array.
4. The array of claim 1 wherein the waffle-type light-coupling grating includes a hybrid metal layer having both ohmic and reflective qualities.
5. The array of claim 1 wherein each of the one or more detector layers is about one micron or less in thickness.
6. The array of claim 1 wherein each of the contact layers is electrically coupled to a respective electrical contact on the backside, thereby facilitating hybridization when the array is connected to a substrate configured with supporting electrical circuitry.
7. A photo detector array comprising:
one or more detector layers of semiconductor material, each detector layer between contact layers of semiconductor material, thereby defining a stack of layers of a multicolor photo detector having a front side and a back side and forming at least one pixel therein;
a rotated waffle-type light-coupling grating formed on the backside of the stack and having a plurality of wells etched into an upper level, said wells having a plurality of well sidewalls and a lower level, and wherein the light-coupling grating having a pattern that reflects a substantial portion of light coming into the array so as to disperse that light through the one or more detector layers, thereby facilitating absorption, wherein a surface area of said wells is about approximately equal to a remaining surface area of said backside, and a pitch of said wells is about one wavelength of a center wavelength of interest.
8. The array of claim 7 wherein the light-coupling grating includes a hybrid metal layer having both ohmic and reflective qualities coating said grating, and edges of each of said detector layers are reflectively coated so as to provide, in conjunction with the light-coupling grating, a photon-in-a-box configuration for containing light within each pixel of the array.