High density semiconductor memory cell and memory array using a single transistor and having counter-doped poly and buried diffusion wordline
View Patent ↗A programmable memory cell comprised of a transistor located at the crosspoint of a column bitline and a row wordline is disclosed. The transistor has its gate formed from the column bitline and its source connected to the row wordline. The memory cell is programmed by applying a voltage potential between the column bitline and the row wordline to produce a programmed p+ region to form a p-n diode in the substrate underlying the gate of the transistor. Further, the wordline is formed from a buried diffusion N+ layer while the column bitline is formed from a counterdoped polysilicon layer.
1. A non-volatile programmable memory cell formed in a p-type semiconductor substrate and useful in a memory array having column bitlines and row wordlines, the memory cell comprising:
a transistor having a p+ doped gate, a gate dielectric between the gate and over said substrate, and first and second doped semiconductor regions formed in said substrate adjacent said gate and in a spaced apart relationship to define a channel region therebetween and under said gate, the gate being formed from one of said column bitlines; and
wherein the second p+ doped semiconductor region of the transistor is connected to one of said row wordlines, and wherein said row wordline is formed by an n-type region near the surface of said semiconductor substrate.
2. The memory cell of claim 1 wherein said gate is formed from one of said column bitlines.
3. The memory cell of claim 1 wherein said memory cells further including a non-volatilely programmed doped region formed in said substrate in a channel region when said memory cell has been programmed.
4. A non-volatile programmable memory cell formed in an n-type well and useful in a memory array having column bitlines and row wordlines, the memory cell comprising:
a transistor having a n+ doped gate, a gate dielectric between the gate and over a substrate, and first and second doped semiconductor regions formed in said substrate adjacent said gate and in a spaced apart relationship to define a channel region therebetween and under said gate, the gate being formed from one of said column bitlines; and
wherein the second n+ doped semiconductor region of the transistor is connected to one of said row wordlines, and wherein said row wordline is formed by a p-type region near the surface of said n-type well.
5. The memory cell of claim 4 wherein said gate is formed from one of said column bitlines.
6. The memory cell of claim 4 wherein said memory cells further including a non-volatilely programmed doped region formed in said substrate in a channel region when said memory cell has been programmed.
7. The memory cell of claim 4 wherein said n-type well is replaced by an n-type substrate.