Patent Assignment
Reel/Frame 039884/0004
Security Interest
Recorded: 2016-08-30
Pages: 26
Assignor
KILOPASS TECHNOLOGY, INC.
Executed: 2016-08-30
Assignee
STRUCTURAL CAPITAL INVESTMENTS II, LP
3555 ALAMEDA DE LAS PULGAS, SUITE 208, MENLO PARK, CALIFORNIA, 94025
Covered Properties
(31)
Semiconductor Memory Cell and Memory Array Using a Breakdown Phenomena in an Ultra-Thin Dielectric
Smart Card Having Memory Using a Breakdown Phenomena in an Ultra-Thin Dielectric
Reprogrammable Non-Volatile Memory Using a Breakdown Phenomena in an Ultra-Thin Dielectric
Semiconductor Memory Cell and Memory Array Using a Breakdown Phenomena in an Ultra-Thin Dielectric
High Density Semiconductor Memory Cell and Memory Array Using a Single Transistor
Programming Methods and Circuits for Semiconductor Memory Cell and Memory Array Using a Breakdown Phenomena in an Ultra-Thin Dielectric
Reprogrammable Non-Volatile Memory Using a Breakdown Phenomena in an Ultra-Thin Dielectric
Method of Testing the Thin Oxide of a Semiconductor Memory Cell That Uses Breakdown Voltage
Patent:
6,791,891 →
Application:
10/406,406 →
High Density Semiconductor Memory Cell and Memory Array Using a Single Transistor
Semiconductor Memory Cell and Memory Array Using a Breakdown Phenomena in an Ultra-Thin Dielectric
High Density Semiconductor Memory Cell and Memory Array Using a Single Transistor Having a Buried N+ Connection
High Density Semiconductor Memory Cell and Memory Array Using a Single Transistor and Having Variable Gate Oxide Breakdown
Methods and Circuits for Testing Programmability of a Semiconductor Memory Cell and Memory Array Using a Breakdown Phenomenon in an Ultra-Thin Dielectric
High Density Semiconductor Memory Cell and Memory Array Using a Single Transistor and Having Counter-Doped Poly and Buried Diffusion Wordline
Methods and Circuits for Programming of a Semiconductor Memory Cell and Memory Array Using a Breakdown Phenomenon in an Ultra-Thin Dielectric
3.5 Transistor Non-Volatile Memory Cell Using Gate Breakdown Phenomena
Patent:
7,173,851 →
Application:
11/252,461 →
Memory Transistor Gate Oxide Stress Release and Improved Reliability
Non-Volatile Semiconductor Memory Based on Enhanced Gate Oxide Breakdown
Electrically Programmable Fuse Bit
Memory Transistor Gate Oxide Stress Release and Improved Reliability
Reducing Bit Line Leakage Current in Non-Volatile Memories
Method and Apparatus for Programming Auto Shut-Off
Non-Volatile Semiconductor Memory Based on Enhanced Gate Oxide Breakdown
Electrically Programmable Fuse Bit
One-Time Programmable Memory
One-Time Programmable Memory and Method for Making the Same
One-Time Programmable Memory and Method for Making the Same
One-Time Programmable Memory and Method for Making the Same
Reduced Power Read Sensing for One-Time Programmable Memories
Write Enhancement for One Time Programmable (OTP) Semiconductors
Semiconductor Memory Sensing Architecture
Related Assignments
(6)
Other recorded transfers of the patents in this record — the chain of ownership.
Corrective Assignment to Correct the Assignee Name Previously Recorded at Reel: 012877 Frame: 0804. Assignor(S) Hereby Confirms the Assignment.
Aug 29, 2016
From: PENG, JACK ZEZHONG
To: KILOPASS TECHNOLOGY, INC.
Reel/Frame 040365/0509 →
Corrective Assignment to Correct the Assignee Name Previously Recorded at Reel: 012877 Frame: 0796. Assignor(S) Hereby Confirms the Assignment.
Aug 29, 2016
From: PENG, JACK ZEZHONG
To: KILOPASS TECHNOLOGY, INC.
Reel/Frame 040365/0874 →
Corrective Assignment to Correct the Assignee Name Previously Recorded at Reel: 017650 Frame: 0015. Assignor(S) Hereby Confirms the Assignment.
Aug 29, 2016
From: FONG, DAVID; WANG, JIANGUO; PENG, JACK ZEZHONG; LUAN, HARRY
To: KILOPASS TECHNOLOGY, INC.
Reel/Frame 040366/0012 →
Assignment of Assignor's Interest
Aug 29, 2016
From: PENG, JACK ZEZHONG
To: KILOPASS TECHNOLOGY, INC.
Reel/Frame 040367/0258 →
Assignment of Assignor's Interest
Aug 29, 2016
From: PENG, JACK ZEZHONG
To: KILOPASS TECHNOLOGY, INC.
Reel/Frame 040367/0331 →
Assignment of Assignor's Interest
May 4, 2018
From: KILOPASS TECHNOLOGY, INC.
To: SYNOPSYS, INC.
Reel/Frame 046099/0269 →