Semiconductor device, method of manufacturing three-dimensional stacking type semiconductor device, circuit board, and electronic instrument
View Patent ↗A semiconductor device has a substrate and an electrode layer formed on the substrate, and the electrode layer includes a plurality of conductive layers and an insulating layer which are stacked, the insulating layer being interposed between two of the conductive layers adjacent each other, a through-hole being formed in each of the conductive layers lower than an uppermost conductive layer among the conductive layers, and the through-hole being filled with an insulating material.
1. A method of manufacturing a three-dimensional stacking type semiconductor device, comprising:
forming an electrode layer on each of a plurality of substrates, the electrode layer having a plurality of conductive layers with an insulating layer interposed between at least two adjacent conductive layers of the plurality of conductive layers, each of the at least two adjacent conductive layers being lower than an uppermost conductive layer and having a through-hole formed therein, the through-hole being filled with an insulating material;
forming a hole in the uppermost conductive layer coaxially with the through-hole in each of the at least two adjacent conductive layers, and forming an electrode layer through-hole in the electrode layer by etching the insulating material;
forming a substrate through-hole connected with the electrode layer through-hole in each of the substrates;
filling the electrode layer through-hole and the substrate through-hole in each of the substrates with a conductive member; and
stacking the substrates by using the conductive member of each of the substrates.