Composite series resistor having reduced temperature sensitivity in an IC chip
View Patent ↗According to one exemplary embodiment, an integrated circuit chip comprises an oxide region. The integrated circuit chip further comprises a poly resistor having a first terminal and second terminal, where the poly resistor is situated over the oxide region. According to this exemplary embodiment, the integrated circuit chip further comprises a metal resistor having a first terminal and a second terminal, where the metal resistor is situated over the poly resistor, and where the first terminal of the metal resistor is connected to the first terminal of the poly resistor. According to this exemplary embodiment, the integrated circuit chip may further comprise a first metal segment connected to the second terminal of the metal resistor and a second metal segment connected to the second terminal of the poly resistor. The integrated circuit chip may further comprise an inter-layer dielectric situated between the poly resistor and the metal resistor.
1. A composite resistor in an integrated circuit chip, said composite resistor comprising:
a poly resistor having a first terminal and a second terminal, said poly resistor being situated over an oxide region in said integrated circuit chip, said second terminal of said poly resistor being a first terminal of said composite resistor;
a metal resistor having a first terminal and a second terminal, said metal resistor being situated over said poly resistor, said first terminal of said metal resistor being connected to said first terminal of said poly resistor, said second terminal of said metal resistor being a second terminal of said composite resistor;
said metal resistor comprising material selected from the group consisting of titanium nitride, titanium nitride tungsten, and titanium tungsten.
2. The composite resistor of claim 1 wherein said poly resistor comprises P-type polycrystalline silicon.
3. The composite resistor of claim 1 wherein a first resistance of said composite resistor at a first temperature is substantially equal to a second resistance of said composite resistor at a second temperature.
4. The composite resistor of claim 1 wherein said metal resistor is situated in a first metal level of said integrated circuit chip.
5. The composite resistor of claim 1 wherein a first inter-layer dielectric is situated between said poly resistor and said metal resistor.
6. The composite resistor of claim 1 wherein said oxide region is a field oxide region.
7. The composite resistor of claim 1 wherein said first terminal of said composite resistor is connected to a first metal segment and said second terminal of said composite resistor is connected to a second metal segment.
8. The composite resistor of claim 7 wherein said first and said second metal segments are situated in a second metal level of said integrated circuit chip.
9. A composite resistor in an integrated circuit chip, said composite resistor comprising:
a poly resistor having a first terminal and a second terminal, said poly resistor being situated over an oxide region in said integrated circuit chip, said second terminal of said poly resistor being a first terminal of said composite resistor;
a metal resistor having a first terminal and a second terminal, said metal resistor being situated over said poly resistor, said first terminal of said metal resistor being connected to said first terminal of said poly resistor, said second terminal of said metal resistor being a second terminal of said composite resistor;
wherein said first terminal of said composite resistor is connected to a first metal segment and said second terminal of said composite resistor is connected to a second metal segment.
10. The composite resistor of claim 9 wherein said first and said second metal segments are situated in a second metal level of said integrated circuit chip.
11. A composite resistor in an integrated circuit chip, said composite resistor comprising:
a poly resistor having a first terminal and a second terminal, said poly resistor being situated over an oxide region in said integrated circuit chip, said second terminal of said poly resistor being a first terminal of said composite resistor;
a metal resistor having a first terminal and a second terminal, said metal resistor being situated over said poly resistor, said first terminal of said metal resistor being connected to said first terminal of said poly resistor, said second terminal of said metal resistor being a second terminal of said composite resistor;
wherein said metal resistor comprises titanium nitride.