Plasma processing apparatus
View Patent ↗A low-cost plasma processing apparatus which permits reduction of the cost, as well as reduction of the loss of transmitted power. The plasma processing apparatus 1 has an apparatus main body 2 and auxiliary equipment 3 . The auxiliary equipment 3 is comprised of a power supply apparatus 5 that supplies power to a processing chamber 4 , and a plurality of dry pumps 6 and 7 , and so on. The power supply apparatus 5 is comprised of a matching unit 9 , an RF amplifier 13 that is connected to the matching unit 9 via a coaxial cable 24 , and a power controller 12 having a DC amplifier 14 therein. The RF amplifier 13 is formed in a separate body to the DC amplifier 14 and disposed in a position away from the DC amplifier 14 and close to the matching unit 9 , and is connected to the DC amplifier 14 via an ordinary cable 25.
1. A plasma processing apparatus comprising:
a processing chamber in which objects to be processed are processed;
power supply means for supplying RF power to said processing chamber;
exhausting means for evacuating an interior of said processing chamber to a predetermined reduced pressure state; and
processing gas introducing means for introducing a processing gas into said processing chamber, the plasma processing apparatus forming an RF electric field inside said processing chamber through the supplied RF power, and thus converting the introduced processing gas into a plasma, and carrying out plasma processing;
wherein said power supply means comprises:
a matching unit that is connected to said processing chamber via a transmission path along which the RF power is transmitted to said processing chamber, and that matches an impedance of said transmission path to an impedance of the processing gas that has been converted into the plasma;
an RF amplifier that is connected to said matching unit and that is disposed in a position close to said matching unit; and
a DC amplifier that is connected to said RF amplifier and that is installed in a utility section other than a clean room housing said processing chamber, said matching unit and said RF amplifier; and
wherein said DC amplifier is connected to said RF amplifier via an ordinary cable.
2. A plasma processing apparatus as claimed in claim 1 , wherein said RF amplifier is connected to said matching unit via a coaxial cable.
3. A plasma processing apparatus as claimed in claim 1 , wherein said utility section is disposed downstairs from said clean room.
4. A plasma processing apparatus as claimed in any one of claim 1 , further comprising a circulator that is built into said RF amplifier.
5. A plasma processing apparatus comprising:
a processing chamber configured to process objects therein;
power supply apparatus configured to supply RF power to said processing chamber;
exhausting apparatus configured to evacuate an interior of said processing chamber to a predetermined reduced pressure state; and
processing gas introducing apparatus configured to introduce a processing gas into said processing chamber, the plasma processing apparatus forming an RF electric field inside said processing chamber through the supplied RF power, and thus converting the introduced processing gas into a plasma, and carrying out plasma processing;
wherein said power supply apparatus comprises:
a matching unit that is connected to said processing chamber via a transmission path along which the RF power is transmitted to said processing chamber, and that matches an impedance of said transmission path to an impedance of the processing gas that has been converted into the plasma;
an RF amplifier that is connected to said matching unit and that is disposed adjacent to said matching unit; and
a DC amplifier that is connected to said RF amplifier and that is installed in a utility section other than a clean room housing said processing chamber, said matching unit and said RF amplifier; and
wherein said DC amplifier is connected to said RF amplifier via a non-coaxial cable.
6. A plasma processing apparatus as claimed in claim 5 , wherein said RF amplifier is connected to said matching unit via a coaxial cable.
7. A plasma processing apparatus as claimed in claim 6 , wherein said coaxial cable comprises a coaxial cable having an amplitude attenuation factor of 0.35 dB/20 m.
8. A plasma processing apparatus as claimed in claim 5 , wherein said non-coaxial cable comprises a lead wire having a resistance of 0.0993 ohms/km.
9. A plasma processing apparatus as claimed in claim 5 , further comprising a circulator that is an integral part of said RF amplifier.
10. A plasma processing apparatus as claimed in claim 9 , wherein said circulator has an attenuation factor of 0.3 dB.
11. A plasma processing apparatus as claimed in claim 9 , wherein said RF amplifier is connected to said matching unit by way of another transmission path, wherein said another transmission path does not include RF connectors.