Electron beam processing method
View Patent ↗A microscopic projection or a characteristic pattern are formed in the vicinity of a region to be processed before processing using electron beam CVD, during processing an image of a region containing the projection or pattern formed by electron beam CVD is captured to obtain a current position of the projection or pattern, a difference between the position before staring and the current position is treated as a drift amount and processing is restarted at a region that has been subjected to microscopic adjustment of the electron irradiation region.
1. An electron beam processing method comprising the steps of:
forming, in advance, a reference pattern by electron beam CVD while source material gas flows to the vicinity of a region to be processed before processing with an electron beam;
acquiring a secondary electron image of a region including the reference pattern before and during processing of the region to calculate an amount of movement in the X direction and the Y direction of a position of the reference pattern; and
carrying out processing on the region while correcting an irradiation position of the electron beam in the X direction and the Y direction based on the calculated amount of movement of the position of the reference pattern.
2. An electron beam processing method according to claim 1 ; wherein the reference pattern is a minute projection having a size of at least 20 nm.
3. An electron beam processing method according to claim 1 ; wherein the reference pattern is formed of a material having a contrast difference of a few percent or more from a substrate in a secondary electron image.
4. An electron beam processing method according to claim 1 ; wherein the reference pattern is a characteristic pattern whose displacement in an X direction and a Y direction can be measured; and the acquiring step includes calculating the amount of displacement of the characteristic pattern using pattern matching.
5. A method of correcting an irradiation position of an electron beam, comprising the steps of:
forming a reference marker by electron beam CVD in the vicinity of a region of a sample to be processed with an electron beam;
acquiring secondary electron images of a sample region that includes the reference marker before and during processing of the sample region with an electron beam;
calculating from the secondary electron images an amount of drift in X and Y directions of the position of the reference marker; and
carrying out processing on the sample region while correcting an irradiation position of the electron beam in the X and Y directions based on the calculated amount of drift of the position of the reference marker.
6. A method according to claim 5 ; wherein the acquiring step includes acquiring secondary electron images of a sample region that includes the reference marker a plurality of times during processing of the sample region with an electron beam; and the calculating and carrying out steps are carried out a plurality of times.
7. A method according to claim 5 ; wherein the reference marker comprises a projection.
8. A method according to claim 7 ; wherein the projection has a size of at least 20 nm.
9. A method according to claim 5 ; wherein the reference marker is formed of a material that produces a secondary electron image having a contrast difference of a few percent or more relative to the secondary electron image produced by the material being processed.
10. A method according to claim 5 ; wherein the reference marker comprises a characteristic pattern whose displacement in X and Y directions can be measured; and the calculating step comprises calculating the amount of displacement of the characteristic pattern using pattern matching.
11. A method according to claim 10 ; wherein the characteristic pattern has intersecting portions.
12. A method according to claim 11 ; wherein the characteristic pattern has a cross shape.