Multiple oxidation smoothing method for reducing silicon waveguide roughness

1. A method of reducing waveguide roughness comprising:

oxidizing the surface of a waveguide to form an oxidized layer, said oxidation is governed by the rate of reactant to the surface of said waveguide to define a reaction-limited regime once said oxidized layer grows and oxygen diffuses through said surface of said waveguide to define a diffusion-limited regime at an elevated temperature of at least 1050 C.; and

isotropically etching the oxidized layer every time said reaction-limited regime is approaching said diffusion-limited regime; the oxidized layer is repeatedly oxidized and etched so that said waveguide is continuously oxidized in the reaction-limited regime isotropically etching comprises anhydrous HF, reducing the overall time of oxidation and volume of oxidized material so that said waveguide has its sidewall roughness reduced efficiently enabling high transmission rates of guided light.

2. The method of claim 1 , wherein the waveguide has a substrate that comprises silicon.

3. The method of claim 1 , wherein the oxidized layer is oxidized at least once.

4. The method of claim 3 , wherein the oxidation is performed for approximately 90 minutes.

5. The method of claim 1 , wherein the waveguide comprises a polycrystalline waveguide.

6. The method of claim 1 , wherein the waveguide comprises a single crystal waveguide.

7. The method of claim 1 , wherein said oxide layer is formed using an oxidizing chemical solution.

8. The method of claim 7 , wherein said oxidizing chemical solution comprises standard clean one (SC-1).

9. The method of claim 7 , wherein said oxidizing chemical solution comprises nitric acid.

10. The method of claim 1 , wherein said isotropically etching comprises standard clean one (SC-2).

11. The method of claim 1 , wherein said isotropically etching comprises liquid HF.

12. A light-guiding structure comprising a waveguide structure that comprises a substrate, and a low refractive index underclad material, said waveguide structure is oxidized to form an oxidized layer on a surface of said waveguide structure, said oxidation is governed by the rate of reactant to the surface of said waveguide structure to define a reaction-limited regime and a diffusion-limited regime is defined once said oxidized layer grows and oxygen diffuses through said surface of said waveguide structure at an elevated temperature of at least 1050 C., the oxidized layer is isotropically etched after the reaction-limited oxidation regime is approaching the diffusion-limited regime and repeatedly oxidized and etched so that the waveguide structure is continuously oxidized in the reaction-limited regime, reducing the overall time of oxidation and volume of oxidized material so that said waveguide structure has its sidewall roughness reduced efficiently enabling high transmission rates of guided light.

13. The light-guiding structure of claim 12 , wherein the waveguide has a substrate that comprises silicon.

14. The light-guiding structure of claim 12 , wherein the oxidized layer is oxidized twice.

15. The light-guiding structure of claim 14 , wherein the oxidation is performed at 90 minutes.

16. The light-guiding structure of claim 12 , wherein the waveguide comprises a polycrystalline waveguide.

17. The light-guiding structure of claim 12 , wherein the waveguide comprises a single crystal waveguide.

18. The light-guiding structure of claim 12 , wherein said oxide layer is formed using an oxidizing chemical solution.

19. The light-guiding structure of claim 12 , wherein said oxidizing chemical solution comprises standard clean one (SC-1).

20. A method of reducing channel waveguide roughness comprising:

forming a compound layer on a surface of a waveguide by exposure to a reactive ambient, said reactive ambient is governed by the rate of reactant to the surface of said waveguide to define a reaction-limited regime and a diffusion-limited regime is defined once said oxidized layer grows and oxygen diffuses through said surface of said waveguide surface at an elevated temperature of at least 1050 C; and

removing the compound layer every time a reaction-limited regime is approaching a diffusion-limited regime utilizing diluted HF; the compound layer is repeatedly exposed and removed so that said waveguide is continuously exposed in the reaction-limited regime, reducing the overall time of exposure and volume of the compound layer materials so that said waveguide has its sidewall roughness reduced efficiently enabling high transmission rates of guided light.

21. The method of claim 20 , wherein the said waveguide comprises a substrate.

22. The method of claim 20 , wherein the compound layer is oxidized at least once.

23. The method of claim 22 , wherein the oxidation is performed for approximately 90 minutes.

24. The method of claim 20 , wherein the waveguide comprises a polycrystalline waveguide.

25. The method of claim 20 , wherein the waveguide comprises a single crystal waveguide.

26. The method of claim 20 , wherein said compound layer is formed using an oxidizing chemical solution.

27. The method of claim 26 , wherein said oxidizing chemical solution comprises standard clean one (SC-1).

28. The method of claim 26 , wherein said oxidizing chemical solution comprises nitric acid.

29. The method of claim 20 , wherein said removing comprises anhydrous HF.

30. The method of claim 29 , wherein said removing comprises standard clean one (SC-2).

31. The method of claim 29 , wherein said removing comprises liquid HF.

32. The light-guiding structure of claim 21 , wherein the substrate comprises silicon.

33. A light-guiding structure comprising a waveguide structure that comprises a substrate, a strip of material embedded within one or more materials, or residing on top of a plane of one or more materials, in which the majority of the optical power is contained within the strip and a low refractive index underclad material, said waveguide structure is exposed to a reactive ambient to form an compound layer on a surface of said waveguide structure, said reactive ambient is governed by the rate of reactant to the surface of said waveguide to define a reaction-limited regime and a diffusion-limited regime is defined once said oxidized layer grows and oxygen diffuses through said surface of said waveguide surface at an elevated temperature of at least 1050 C., the compound layer is removed after the reaction-limited regime is approaching the diffusion-limited regime utilizing diluted HF and repeatedly exposed and removed so that the waveguide structure is continuously exposed in the reaction-limited regime, reducing the overall time of exposure and volume of the compound layer material so that said waveguide structure has its sidewall roughness reduced efficiently enabling high transmission rates of guided light.

34. The light-guiding structure of claim 33 , wherein the said substrate comprises a silicon.

35. The light-guiding structure of claim 33 , wherein the compound layer is oxidized at least once.

36. The light-guiding structure of claim 35 , wherein the oxidation is performed for approximately 90 minutes.

37. The light-guiding structure of claim 33 , wherein the waveguide comprises a polycrystalline waveguide.

38. The light-guiding structure of claim 33 , wherein the waveguide comprises a single crystal waveguide.

39. The light-guiding structure of claim 33 , wherein said compound layer is formed using an oxidizing chemical solution.

40. The light-guiding structure of claim 39 , wherein said oxidizing chemical solution comprises standard clean one (SC-1).

41. The light-guiding structure of claim 39 , wherein said oxidizing chemical solution comprises nitric acid.

42. The light-guiding structure of claim 37 , wherein said removing comprises anhydrous HF.

43. The light-guiding structure of claim 42 , wherein said removing comprises standard clean one (SC-2).

44. The light-guiding structure of claim 42 , wherein said removing comprises liquid HF.