Reflective mask useful for transferring a pattern using extreme ultra violet (EUV) radiation and method of making the same
View Patent ↗An EUV mask ( 10, 309 ) includes an opening ( 26 ) that helps to attenuate and phase shift extreme ultraviolet radiation using a subtractive rather than additive method. A first embedded layer ( 20 ) and a second embedded layer ( 21 ) may be provided between a lower multilayer reflective stack ( 14 ) and an upper multilayer reflective stack ( 22 ) to ensure an appropriate and accurate depth of the opening ( 26 ), while allowing for defect inspection of the EUV mask ( 10, 309 ) and optional defect repair. An optional ARC layer ( 400 ) may be deposited in region ( 28 ) to reduce the amount of reflection within dark region ( 28 ). Alternately, a single embedded layer of hafnium oxide, zirconium oxide, tantalum silicon oxide, tantalum oxide, or the like, may be used in place of embedded layers ( 20, 21 ). Optimal thicknesses and locations of the various layers are described.
1. A method for making a reflective mask useful for transferring a pattern to a semiconductor substrate comprising:
providing a mask substrate;
forming a lower multilayer reflective stack over the mask substrate;
forming a first embedded layer over the lower multilayer reflective stack;
forming a second embedded layer over the first embedded layer;
forming a top multilayer reflective stack over the second embedded layer; and
etching an opening through the top multilayer reflective stack to form an exposed portion of the second embedded layer,
wherein at least one of attenuation or phase shifting of incident radiation is achieved by way of destructive interference.
2. The method of claim 1 , further comprising removing the exposed portion of the second embedded layer.
3. The method of claim 2 , wherein removing the exposed portion of the second embedded layer comprises etching the exposed portion of the second embedded layer selective to the first embedded layer.
4. The method of claim 1 , wherein etching an opening further comprises forming a defect in the opening.
5. The method of claim 4 , further comprising:
inspecting the reflective mask after etching the opening through the top multilayer reflective stack; and
removing the defect in the opening.
6. The method of claim 1 , wherein forming the first embedded layer comprises forming a layer comprising a material selected from the group consisting of ruthenium, tantalum silicon oxide, boron carbide, hafnium oxide, zirconium oxide, zirconium and silicon oxynitride.
7. The method of claim 1 , wherein forming the second embedded layer comprises forming a layer comprising a material selected from the group consisting of chromium, chromium nitride, chromium oxide, hafnium oxide, zirconium oxide, zirconium and nickel iron.
8. The method of claim 1 , wherein forming the first embedded layer comprises forming a layer comprising a dielectric.
9. The method of claim 1 , wherein forming the first embedded layer and forming the second embedded layer comprise forming a layer comprising a material selected from hafnium oxide, zirconium oxide, tantalum silicon oxide and tantalum oxide.
10. The method of claim 1 , further comprising forming a third embedded layer over a second embedded layer.
11. A method for making a reflective mask useful for transferring a pattern to a semiconductor substrate comprising:
providing a mask substrate;
forming a lower multilayer reflective stack over the mask substrate;
forming a first embedded layer over the lower multilayer reflective stack; wherein the first embedded layer comprises a material selected from hafnium oxide, zirconium oxide, and tantalum oxide;
forming a top multilayer reflective stack over the first embedded layer; and
etching an opening through the top multilayer reflective stacks,
wherein at least one of attenuation or phase shifting of incident radiation is achieved by way of destructive interference.
12. The method of claim 11 , wherein etching an opening further comprises forming a defect in the opening.
13. The method of claim 12 , further comprising:
inspecting the reflective mask after etching the opening through the top multilayer reflective stack; and
removing the defect in the opening.
14. The method of claim 11 , further comprising forming a second embedded layer over the first embedded layer.
15. The method of claim 14 , wherein etching the opening through the top
multilayer reflective stack forms an exposed portion of the second embedded layer; and
wherein the method further comprises removing the exposed portion of the second embedded layer.
16. The method of claim 14 , wherein forming the second embedded layer comprises forming a layer comprising a material selected from the group consisting of chromium, chromium nitride, chromium oxide, hafnium oxide, zirconium oxide, zirconium and nickel iron.
17. The method of claim 14 , further comprising a third embedded layer over the second embedded layer.
18. A method for patterning a photoresist layer on a semiconductor substrate using a reflective mask comprising:
providing a semiconductor substrate;
forming a photoresist layer over the semiconductor substrate;
providing a reflective mask, the reflective mask comprising:
a mask substrate;
a lower multilayer reflective stack formed over the mask substrate;
a top multilayer reflective stack over the lower multilayer reflective stack, wherein the top multilayer reflective stack includes an opening;
a first embedded layer under the top multilayer reflective stack and exposed in the opening; and
a second embedded layer under the top multilayer reflective stack;
projecting incident radiation on the reflective mask,
wherein at least one of attenuation or phase shifting of the incident radiation is achieved by way of destructive interference;
reflecting the incident radiation from the reflective mask as reflected radiation; and illuminating the photoresist layer with the reflected radiation.
19. The method of claim 18 , the first embedded layer comprises forming a layer comprising a material selected from the group consisting of ruthenium, tantalum silicon oxide, boron carbide, hafnium oxide, zirconium oxide, zirconium and silicon oxynitride.
20. The method of claim 19 , wherein the second embedded layer comprises forming a layer comprising a material selected from the group consisting of chromium, chromium nitride, chromium oxide, hafnium oxide, zirconium oxide, zirconium and nickel iron.
21. The method of claim 18 , wherein the first embedded layer comprises a dielectric.
22. The method of claim 18 , wherein the first embedded layer and the second embedded layer comprise a material selected from the group consisting of hafnium oxide, zirconium oxide, tantalum silicon oxide and tantalum oxide.
23. The method of claim 18 , wherein the reflective mask further comprises a third embedded layer over the second embedded layer.
24. A reflective mask comprising:
a mask substrate;
a lower multilayer reflective stack formed over the mask substrate;
a top multilayer reflective stack over the lower multilayer reflective stack, wherein the top multilayer reflective stack includes an opening;
a first embedded layer under the top multilayer reflective stack and exposed in the opening; and
a second embedded layer under the top multilayer reflective stack,
wherein a thickness of the second embedded layer is selected to produce at least one of attenuation or phase shifting of incident radiation by way of destructive interference.