Aqueous buffered fluoride-containing etch residue removers and cleaners

1. A composition for cleaning a semiconductor substrate, the composition comprising:

a fluoride containing compound selected from a fluoroboric acid; a compound of the general formula R 1 R 2 R 3 R 4 NF, where R 1 , R 2 , R 3 and R 4 are independently hydrogen, an alcohol group, an alkoxy group or an alkyl group; and mixtures thereof,

a buffer comprising a substantially 1:1 molar ratio of (A) an acid selected from a weak acid and a protonated base and (B) a base selected from an amine, ammonia, ammonium hydroxide and an alkyl ammonium hydroxide, and

optionally an organic polar solvent wherein the solvent is miscible in water wherein the composition has a pH that ranges from greater than 7.0 to about 11.0.

2. The composition of claim 1 further comprising a corrosion inhibitor.

3. The composition of claim 1 wherein the fluoride containing compound is the compound of the general formula R 1 R 2 R 3 R 4 NF.

4. The composition of claim 3 wherein the compound is ammonium fluoride, tetramethyl ammonium fluoride, or tetraethyl ammonium fluoride.

5. The composition of claim 1 wherein the buffer comprises the weak acid selected from abietic acid, aspartic diamide, aspidospermine, N,N-bis(2-hydroxylethel)-2-aminoethane sulfonic acid, 4-chloro-2-(2′-thiazolylazo)phenol, chrome dark blue, diacetylacetone, 5,5-diallybarbituric acid, 1,3-dichloro-2,5-dihydroxybenzene, 2,3-dichlorophenol, 3,4-dihydroxybenzaldehyde, 2,6-dihydroxypurine, 1,10-dimethoxy-3,8-dimethyl-4,7-phenanthroline, N,N′-dimethylethylenediam-ine-N,N′-diacetic acid, dimethylhydroxytectracycline, 2,6-dimethyl-4-nitrophenol, ethyl-2-mercaptoacetate, 5-ethyl-5-pentylbarbituric acid, 5-ethyl-5-phenylbarbituric acid, glycine hydroxamic acid, hexamethyldisilazane, 1,2,3,8,9,10-hexamehtyl-4,7-phenat-hroline, 4-hydroxybenzaldehyde, 4-hydroxybenzonitrile (4-cyanophenol), 10-hydroxycodeine, N-(2-hydroxyethyl)piperazine-N′-ethansulfonic acid (“HEPES”), 5-hydroxy-2-(hydroxymethyl)-4H-pyran-4-one, 2-hydroxy-3-methoxybenzaldehyde, 4-hydroxy-3-methoxybenzaldehyde, 3-hydroxy-4-nitrotoluene, 4-methoxy-2-(2′-thiazoylazo)phenol, 2,2′-methylenebis(4-chlorophenol), 4-(methylsulfonyl)phenol, methylthioglycolic acid, 1-methylxanthine, 3-(N-morpholino)propanesulfoni-c acid, 2-nitrohydroquinone, 2-nitrophenol, 4-nitrophenol, 2-nitropropane, phenosulsulfonepthalein, 3-pheny-.alpha.-analine methyl ester, pyrocatecholsulfonepthelein, sylvic acid, 1,3,5-triazine-2,4,6-triol, 2,4,5-trichlorophenol, 3,4,5-trichlorophenol, 2-[tris(hydroxymethyl)methyl-lamineo]-1]ethansulfonic acid, tyrosine amide, tyrosine ethyl ester, uridine-5-diphosphoric acid, benzotriazole, and mixtures thereof.

6. The composition of claim 5 wherein the weak acid is selected from HEPES, benzotriazole, and mixtures thereof.

7. The composition of claim 1 wherein the buffer comprises the protonated base selected from alanine methyl ester, 2-aminoacetamide, 4-amino-3-bromomethylpyridine, 2-aminobutanoic acid methyl ester, 1-aminoisoquinoline, 4-aminoisoxazolidine-3-one, 2-amino-3-methylpyridine-, 2-amino-4-methylpyridine, 2-amino-5-methylpyridine, 2-amino-6-methylpyridine, 2-aminoquilone, n-tert-butanaline, codeine, 2-cyanoethylamine, 2-cyclohexyl-2-pyrroline, N,N-diethyl-o-toluidine, dihydroergonovine, N,N′-dimethyl-p-toluidine, emetine, ergometrinine, 2-ethyl-2-pyrroline, N-ethylveratramine, glycine ethyl ester, glycine methyl ester, glyoxaline, harmine, heroin, isopilocarpine, leucine amide, leucine ethyl seater, methoxycarbonylmethylamine, 1-methylimidazole, 4-methylimidazole, N-methylmorpholine, morphine, N-pentylveratriamine, N-propylveratriamine, serine methyl ester, solanine, 2,3,5,6-tetramethylpyridine, thebaine, 3-thio-5-methylcarbizide, triethanolamine, 2,3,6-trimethylpyridine, 2,4,6-trimethylpyridine, tris(2-hydroxyethyl)amine, L-valine methyl ester, vetramine, vitamin B 12 , and mixtures thereof.

8. The composition of claim 1 comprising an organic, polar solvent.

9. The composition of claim 8 wherein the solvent is one selected from an amine, a sulfoxide, a sulfone, an amide, a lactone, a pyrrolidone, an imidazolidinone, a glycol, a glycol ether and mixtures thereof.

10. The composition of claim 9 wherein the solvent is dimethylacetamide.

11. The composition of claim 9 wherein the solvent is N-methylpyrrolidone.

12. The composition of claim 1 wherein the pH ranges from greater than 7.0 to about 9.0.

13. The composition of claim 12 wherein the pH ranges from greater than 7.0 to about 8.4.

14. An aqueous, buffered fluoride-containing composition, comprising:

from 0.1% by weight to 20% by weight of a fluoride containing compound selected from fluoroboric acid; a compound of the general formula R 1 R 2 R 3 R 4 NF, where R 1 , R 2 , R 3 and R 4 are independently hydrogen, an alcohol group or an alkyl group; and

mixtures thereof,

up to 70% by weight of an organic polar solvent wherein the solvent is miscible water,

a buffer comprising, in substantially a 1:1 molar ratio, (A) an acid selected from a weak acid and a protonated base and (B) a base selected from an amine, ammonia, ammonium hydroxide and an alkyl ammonium hydroxide, and

from 1% by weight to 92% by weight water,

wherein the aqueous, buffered, fluoride containing composition has a pH that ranges from greater than 7.0 to about 11.0.

15. The aqueous, buffered, fluoride containing composition of claim 14 wherein the water is present in amounts ranging from 1% by weight to 70% by weight.

16. A composition for cleaning a semiconductor substrate, the composition comprising:

a fluoride containing compound selected from a fluoroboric acid; a compound of the general formula R 1 R 2 R 3 R 4 NF, where R 1 , R 2 , R 3 and R 4 are independently hydrogen, an alcohol group, an alkoxy group or an alkyl group; and mixtures thereof,

a buffer comprising, in a molar ratio of about 10:1 to about 1:10, (A) an acid selected from a weak organic acid, a protonated base, and mixtures thereof and (B) a base selected from an amine, ammonia, ammonium hydroxide, an alkyl ammonium hydroxide, and mixtures thereof, and

optionally an organic polar solvent wherein the solvent is miscible in water wherein the composition has a pH that ranges from greater than 7.0 to about 11.0.

17. A method of stabilizing oxide and metallic etch rates of an aqueous, fluoride containing composition, the method comprising:

providing the composition comprising a fluoride containing compound selected from fluoroboric acid; a compound of the general formula R 1 R 2 R 3 R 4 NF, where R 1 , R 2 , R 3 and R 4 are independently hydrogen, an alcohol group or an alkyl group; and mixtures thereof; and an organic polar solvent;

adding a buffer to the composition to adjust the pH of the composition to a range of from greater than 7.0 to about 11.0 wherein the buffer comprises, in substantially a 1:1 molar ratio, (A) an acid selected from a weak acid, a protonated base, and mixtures thereof and (B) a base selected from an amine, ammonia, ammonium hydroxide, an alkyl ammonium hydroxide, and mixtures thereof.

18. A method of stabilizing oxide and metallic etch rates of an aqueous, fluoride containing composition, the method comprising:

providing the composition comprising a fluoride containing compound selected from fluoroboric acid; a compound of the general formula R 1 R 2 R 3 R 4 NF, where R 1 , R 2 , R 3 and R 4 are independently hydrogen, an alcohol group or an alkyl group; and mixtures thereof; and optionally an organic polar solvent;

adding a buffer to the composition to adjust the pH of the composition to a range of from greater than 7.0 to about 11.0 wherein the buffer comprises, in a molar ratio of about 10:1 to about 1:10, (A) an acid selected from a weak organic acid, a protonated base, and mixtures thereof and (B) a base selected an amine, ammonia, ammonium hydroxide, an alkyl ammonium hydroxide, and mixtures thereof.