Deposition apparatus for providing uniform low-k dielectric
Improvements in a PECVD chamber to provide better uniformity in film thickness and mechanical strength are described. Less contact surface is provided to the outer edge of the wafer and non-uniform gas distribution occurs through adjustments to the gas distribution plate to provide this uniformity.
1 . An apparatus comprising:
a chamber;
a wafer holder disposed in the chamber; and
a gas distribution plate having a plurality of openings facing the wafer holder, the openings being distributed such that there are fewer openings per unit area near an outer edge of the plate than at a center of the plate.
2 . The apparatus defined by claim 1 , wherein the plate has a diameter of approximately 300 millimeters or greater.
3 . The apparatus defined by claim 2 , wherein the openings have a diameter of approximately 0.5 millimeters.
4 . The apparatus defined by claim 1 , wherein the wafer holder supports a wafer on an annular support, the annular support having an outside diameter less than the diameter of a wafer supported by the wafer holder.
5 . The apparatus defined by claim 4 , wherein the wafer holder is adapted to receive wafers of approximately 300 millimeters in diameter, and the outside dimension of the annular support is approximately 200 millimeters or less.
6 . The apparatus defined by claim 1 , wherein the wafer holder is adapted to receive a wafer and includes a plurality of supports upon which the wafer rests.
7 . The apparatus defined by claim 6 , wherein the supports are displaced from the edge of a wafer engaging the wafer holder by a distance of approximately 50 millimeters or more.
8 . An apparatus comprising:
a chamber;
a gas distribution plate having a plurality of openings; and
a wafer holder disposed in the chamber facing the openings of the gas distribution plate, the wafer holder having an annular support upon which a wafer rests, the annular support being displaced from the edge of the wafer engaging the holder.
9 . The apparatus defined by claim 8 , wherein the wafer holder receives a 300 millimeter wafer.
10 . The apparatus defined by claim 9 , wherein the annular support has a diameter of approximately 200 millimeters or less.
11 . The apparatus defined by claim 8 , wherein the openings of the plate are distributed such that there are fewer openings per unit near an outer edge of the plate than at the center of the plate.
12 . The apparatus defined by claim 11 , wherein the plate has a diameter of approximately 300 millimeters or greater.
13 . The apparatus defined by claim 12 , wherein the openings have a diameter of approximately 0.5 millimeters.
14 . An apparatus comprising:
a chamber;
a wafer holder disposed in the chamber, the wafer holder having an annular support upon which a wafer rests, the annular support being displaced from the edge of the wafer engaging the holder; and
a gas distribution plate having a plurality of openings facing the wafer holder, the openings being distributed such that there are fewer openings per unit area near an outer edge of the plate than at a center of the plate.
15 . The apparatus of claim 14 , wherein the plate has a diameter of approximately 300 millimeters or greater.
16 . The apparatus of claim 14 , wherein the wafer holder is adapted to receive wafers of approximately 300 millimeters in diameter, and the outside dimension of the annular support is approximately 200 millimeters or less.
17 . A method for selecting the thickness of a film at the edge of a wafer deposited in a PECVD chamber comprising:
reducing contact surface between the wafer and the wafer holder at the edge of the wafer; and
forming a film on the wafer with the reduced area.
18 . The method defined by claim 17 , wherein reducing the contact surface comprises, providing a plurality of support members spaced apart from one another to support the wafer.
19 . The method defined by claim 17 , wherein reducing the contact surface comprises providing an annular support having an outside diameter less than the diameter of the wafer.