Semiconductor structures and methods of fabricating semiconductor structures comprising hafnium oxide modified with lanthanum, a lanthanide-series metal, or a combination thereof
View Patent ↗Semiconductor structures and processes for fabricating semiconductor structures comprising hafnium oxide layers modified with lanthanum oxide or a lanthanide-series metal oxide are provided. A semiconductor structure in accordance with an embodiment of the invention comprises an amorphous layer of hafnium oxide overlying a substrate. A lanthanum-containing dopant or a lanthanide-series metal-containing dopant is comprised within the amorphous layer of hafnium oxide. The process comprises growing an amorphous layer of hafnium oxide overlying a substrate. The amorphous layer of hafnium oxide is doped with a dopant having the chemical formulation LnO x , where Ln is lanthanum, a lanthanide-series metal, or a combination thereof, and X is any number greater than zero. The doping step may be performed during or after growth of the amorphous layer of hafnium oxide.
1. A semiconductor structure, comprising:
a substrate;
an amorphous layer of hafnium oxide overlying the substrate; and
a dopant comprising at least one of lanthanum oxide, a lanthanide-series metal oxide, and a combination of lanthanum oxide and a lanthanide-series metal oxide, wherein the dopant is comprised within the amorphous layer of hafnium oxide.
2. The semiconductor structure of claim 1 , wherein the substrate comprises silicon.
3. The semiconductor structure of claim 1 , wherein the amorphous layer of hafnium oxide has a thickness in the range of from about 25 angstroms to about 50 angstroms.
4. The semiconductor structure of claim 1 , further comprising an interface layer overlying the substrate and underlying the amorphous layer of hafnium oxide.
5. The semiconductor structure of claim 4 , wherein the interface layer has a thickness in the range of about 3 to about 10 angstroms.
6. The semiconductor structure of claim 4 , wherein the substrate comprises silicon and the interface layer comprises silicon dioxide.
7. The semiconductor structure of claim 1 , wherein a concentration of the dopant within the amorphous layer of hafnium oxide is greater than about zero and no greater than about 50 atomic percent relative to hafnium within the amorphous layer of hafnium oxide.
8. The semiconductor structure of claim 1 , wherein a concentration of the dopant is substantially constant within the amorphous layer of hafnium oxide.
9. The semiconductor structure of claim 1 , a concentration of the dopant within the amorphous layer of hafnium oxide increasing from an initial concentration to a maximum concentration, wherein the maximum concentration is greater than the initial concentration.
10. The semiconductor structure of claim 9 , wherein the initial concentration is zero.
11. The semiconductor structure of claim 1 , further comprising a pre-layer underlying the amorphous layer of hafnium oxide, the pre-layer comprising hafnium, hafnium oxide, or hafnium and hafnium oxide.