Granted Patent B2

US 7,521,378 · App. 10/883,191 · Granted Apr 21, 2009

Assignee: Micron Technology, Inc.

Abstract

Claims (179)

1. A method of forming a silicon oxide layer in a trench on a substrate, comprising:

wet oxidizing a polysilazane layer situated on the substrate by spraying water onto the polysilazane layer in an ozone ambient at a temperature of less than about 100° C. to produce the silicon oxide layer.

2. The method of claim 1 , wherein the silicon oxide layer is formed over active areas situated on the substrate.

3. A method of forming a silicon oxide layer in a trench on a substrate, comprising:

wet oxidizing a polysilazane layer situated on the substrate by spraying a mixture of water and ozone onto the polysilazane layer at a temperature of less than about 100° C. to produce the silicon oxide layer having an etch rate of less than about 200 Å/minute in a fluoride-based etchant.

4. A method of forming a silicon oxide layer in a trench on a substrate, comprising:

wet oxidizing a polysilazane layer situated on the substrate by immersing the substrate into water comprising ozone at a temperature of less than about 100° C. to produce the silicon oxide layer having an etch rate of less than about 200 Å/minute in a fluoride-based etchant.

5. A method of forming a silicon oxide layer in a trench on a substrate, comprising:

wet oxidizing a polysilazane layer situated on the substrate by applying a solution of ammonium hydroxide/hydrogen peroxide followed by a deionized water rinse at a temperature of less than about 100° C. to produce the silicon oxide layer having an etch rate of less than about 200 Å/minute in a fluoride-based etchant.

6. A method of forming a silicon oxide layer in a trench on a substrate, comprising;

wet oxidizing a polysilazane layer situated on the substrate by applying a solution of hydrochloric acid/hydrogen peroxide followed by a deionized water rinse at a temperature of less than about 100° C. to produce the silicon oxide layer having an etch rate of less than about 200Å/minute in a fluoride-based etchant.

7. A method of forming a silicon oxide layer on a substrate, comprising:

wet oxidizing a polysilazane layer situated on the substrate at a temperature of less than about 100° C. to produce the silicon oxide layer comprising SiO 2 and having an etch rate of less than about 200 Å/minute in a fluoride-based etchant.

8. The method of claim 7 , wherein the etchant comprises about 0.01-2% HF.

9. The method of claim 7 , wherein the etchant comprises a non-aqueous NH 4 F:HF etch solution.

10. A method of forming a silicon oxide layer on a substrate, comprising:

applying water and ozone onto a polysilazane layer situated on the substrate at a temperature of less than about 100° C. to produce the silicon oxide layer having an etch rate of less than about 200 Å/minute in a fluoride-based etchant.

11. A method of forming a silicon oxide layer on a substrate, comprising:

spraying a mixture of water and ozone onto a polysilazane layer on the substrate at a temperature of less than about 100° C. to produce the silicon oxide layer having an etch rate of less than about 200 Å/minute in a fluoride-based etchant.

12. A method of forming a silicon oxide layer on a substrate, comprising:

spraying water onto a polysilazane layer situated on the substrate in an ozone ambient at a temperature of less than about 100° C. to deposit an ozone/water mixture onto the polysilazane layer to produce the silicon oxide layer.

13. A method of forming a silicon oxide layer on a substrate, comprising:

immersing a substrate having a polysilazane layer situated thereon into water comprising ozone at a temperature of less than about 100° C. to modify the polysilazane layer to the silicon oxide layer having an etch rate of less than about 200 Å/minute in a fluoride-based etchant.

14. A method of forming a silicon oxide layer on a substrate, comprising:

wet oxidizing an about 50-500 nm thick polysilazane layer situated on the substrate by exposing the polysilazane layer to water and ozone at a temperature of less than about 100° C. to produce the silicon oxide layer comprising SiO 2 and having a thickness of at least about 50 nm with an etch rate of less than about 200 Å/minute in a fluoride-based etchant.

15. A method of forming a silicon oxide layer on a substrate, comprising:

wet oxidizing a polysilazane layer situated on the substrate at a temperature of less than about 100° C. to produce a silicon oxide layer;

removing a portion of the silicon oxide layer; and

wet oxidizing the silicon oxide layer at a temperature of less than about 100° C. to further oxidize the silicon oxide layer and polysilazane layer.

16. A method of forming a silicon oxide layer on a substrate, comprising:

spin coating a polysilazane solution onto the substrate;

drying the polysilazane solution to form a solid-phase polysilazane layer; and

wet oxidizing the polysilazane layer by exposing the polysilazane layer to water and ozone at a temperature of less than about 100° C. to produce a silicon oxide layer with an etch rate of less than about 200 Å/minute in a fluoride-based etchant.

17. A method of forming a silicon oxide layer on a substrate, comprising:

wet oxidizing a polysilazane layer situated on the substrate at a temperature of less than about 100° C. to produce a silicon oxide layer;

removing a top portion of the silicon oxide layer; and

wet oxidizing the silicon oxide layer at a temperature of less than about 100° C. to further oxidize the silicon oxide layer, an additional thickness of the polysilazane layer, or a combination thereof.

18. A method of forming a silicon oxide layer on a substrate, comprising:

wet oxidizing a thickness of a polysilazane layer situated on the substrate at a temperature of less than about 100° C. to produce a silicon oxide layer;

removing a top portion of the silicon oxide layer; and

wet oxidizing the silicon oxide layer at a temperature of less than about 100° C. to further oxidize the silicon oxide layer and an additional thickness of the polysilazane layer.

19. The method of claim 18 , further comprising:

forming a polysilazane layer on the silicon oxide layer; and

wet oxidizing the polysilazane layer at a temperature of less than about 100° C. to produce a silicon oxide layer.

20. The method of claim 18 , further comprising:

forming a polysilazane layer on the silicon oxide layer; and

applying steam to oxidize the polysilazane layer and further oxidize the silicon oxide layer.

21. A method of forming a silicon oxide layer on a substrate, comprising:

forming a polysilazane layer on the substrate;

wet oxidizing the polysilazane layer at a temperature of less than about 100° C. to produce a silicon oxide layer; and

repeating forming and wet oxidizing a polysilazane layer to form the silicon oxide layer having a desired thickness.

22. The method of claim 21 , further comprising:

depositing a layer of polysilazane onto the silicon oxide layer; and

applying steam to oxidize the polysilazane layer and further oxidize the silicon oxide layer.

23. A method of forming a silicon oxide layer on a substrate, comprising:

forming a polysilazane layer on the substrate;

applying steam to the polysilazane layer to form a silicon oxide layer;

planarizing the silicon oxide layer; and

wet oxidizing the silicon oxide layer at a temperature of less than about 100° C.

24. The method of claim 23 , wherein planarizing comprises a chemical mechanical planarization process.

25. A method of forming a silicon oxide layer on a substrate, comprising:

forming a polysilazane layer on the substrate;

wet oxidizing the polysilazane layer at a temperature of less than about 100° C. to produce a silicon oxide layer;

removing a top portion of the silicon oxide layer;

forming a polysilazane layer on the silicon oxide layer; and

repeating wet oxidizing, removing and forming to form a desired thickness of the silicon oxide layer.

26. A method of forming a silicon oxide layer on a substrate, comprising:

sequentially and repeatedly forming a polysilazane layer over the substrate and wet oxidizing the polysilazane layer by exposing the polysilazane layer to water and ozone at a temperature of less than about 100° C. to produce the silicon oxide layer having a desired thickness, and after wet oxidizing the polysilazane layer, removing a portion of the silicon oxide layer prior to forming the polysilazane layer.

27. The method of claim 26 , further comprising forming a polysilazane layer, applying steam to oxidize the polysilazane layer and further oxidize the silicon oxide layer.

28. The method of claim 26 , further comprising planarizing the silicon oxide layer.

29. A method of forming a silicon oxide layer on a substrate, comprising:

wet oxidizing a polysilazane-based silicon oxide layer situated on the substrate in the presence of ozone to produce the silicon oxide layer, wherein at least about 80% of N and H are replaced in an upper 200-1500 Å of the polysilazane layer, as determined by XPS % atomic analysis, SIMS depth profiling analysis, or both.

30. A method of forming a silicon oxide layer on a substrate, comprising:

applying steam to a polysilazane-based silicon oxide layer situated on the substrate in the presence of ozone to produce the silicon oxide layer, wherein at least about 80% of N and H are replaced in an upper 200-1500 Å of the polysilazane layer, as determined by XPS % atomic analysis, SIMS depth profiling analysis, or both.

31. A method of forming a silicon oxide layer on a substrate, comprising:

wet oxidizing a polysilazane-based silicon oxide layer situated on the substrate by applying a solution of ammonium hydroxide/hydrogen peroxide followed by a deionized water rinse to produce the silicon oxide layer, wherein at least about 80% of N and H are replaced in an upper 200-1500 Åof the polysilazane layer, as determined by XPS % atomic analysis, SIMS depth profiling analysis, or both.

32. A method of forming a silicon oxide layer on a substrate, comprising:

wet oxidizing a polysilazane-based silicon oxide layer situated on the substrate applying a solution of hydrochloric acid/hydrogen peroxide followed by a deionized water rinse to produce the silicon oxide layer, wherein at least about 80% of N and H are replaced in an upper 200-1500 Å of the polysilazane layer, as determined by XPS % atomic analysis, SIMS depth profiling analysis, or both.

33. A method of forming a silicon oxide layer on a substrate, comprising:

steam oxidizing a polysilazane-based silicon oxide layer situated on the substrate in the presence of ozone at a temperature of about 100-200° C. and a pressure of about 0.5-20 atm to produce the silicon oxide layer having an etch rate of less than about 200 Å/minute in a fluoride-based etchant.

34. A method of forming a silicon oxide layer on a substrate, comprising:

wet oxidizing a polysilazane-based silicon oxide layer situated on the substrate in the presence of ozone gas at a temperature of about 100-200° C. and a pressure of about 0.5-20 atm to produce the silicon oxide layer having an etch rate of less than about 200 Å/minute in a fluoride-based etchant.

35. A method of treating a polysilazane layer situated in a trench on a substrate, comprising:

wet oxidizing the polysilazane layer by exposure to water and ozone at a temperature of less than about 100° C. to produce a silicon oxide layer having an etch rate of less than about 200 Å/minute in a fluoride-based etchant.

36. The method of claim 35 , wherein the polysilazane layer is situated over an active area on the substrate.

37. A method of treating a polysilazane layer situated on a semiconductor substrate, comprising:

wet oxidizing the polysilazane layer at a temperature of less than about 100° C. to produce a silicon oxide layer having an etch rate of less than about 200 Å/minute in a fluoride-based etchant.

38. The method of claim 37 , wherein the etchant comprises about 0.01-2% HF.

39. The method of claim 37 , wherein the etchant comprises a non-aqueous NH 4 F:HF etch solution.

40. A method of treating a polysilazane layer situated on a semiconductor substrate, comprising:

applying water and ozone onto the polysilazane layer at a temperature of less than about 100° C. to produce a silicon oxide layer having an etch rate of less than about 200 Å/minute in a fluoride-based etchant.

41. A method of treating a polysilazane layer situated on a semiconductor substrate, comprising:

spraying a mixture of water and ozone onto the polysilazane layer at a temperature of less than about 100° C. to produce a silicon oxide layer having an etch rate of less than about 200 Å/minute in a fluoride-based etchant.

42. A method of treating a polysilazane layer situated on a semiconductor substrate, comprising:

spraying water onto the polysilazane layer in an ozone ambient at a temperature of less than about 100° C. to deposit an ozone/water mixture onto the polysilazane layer to produce a silicon oxide layer.

43. A method of treating a polysilazane layer situated on a semiconductor substrate, comprising:

immersing the substrate into water comprising ozone at a temperature of less than about 100° C. to modify the polysilazane layer to a silicon oxide layer having an etch rate of less than about 200 Å/minute in a fluoride-based etchant.

44. A method of treating a polysilazane layer situated on a semiconductor substrate, comprising:

applying a solution of ammonium hydroxide/hydrogen peroxide onto the polysilazane layer followed by a deionized water rinse to produce a silicon oxide layer having an etch rate of less than about 200 Å/minute in a fluoride-based etchant.

45. A method of treating a polysilazane layer situated on a semiconductor substrate, comprising:

applying a solution of hydrochloric acid/hydrogen peroxide onto the polysilazane layer followed by a deionized water rinse to produce a silicon oxide layer having an etch rate of less than about 200 Å/minute in a fluoride-based etchant.

46. A method of treating a polysilazane-based silicon oxide layer situated on a substrate, comprising:

wet oxidizing the polysilazane-based silicon oxide layer by exposure to water and ozone,

wherein at least about 80% of N and H are replaced in an upper 200-1500 Å of the polysilazane layer, as determined by XPS % atomic analysis, SIMS depth profiling analysis, or both, and the silicon oxide layer has an etch rate of less than about 200 Å/minute in a fluoride-based etchant.

47. A method of treating a polysilazane-based silicon oxide layer situated on a substrate, comprising:

applying steam in the presence of ozone to wet oxidize the polysilazane-based silicon oxide layer, wherein at least about 80% of N and H are replaced in an upper 200-1500 Å of the polysilazane layer, as determined by XPS % atomic analysis, SIMS depth profiling analysis, or both, and the silicon oxide layer has an etch rate of less than about 200 Å/minute in a fluoride-based etchant.

48. A method of treating a polysilazane-based silicon oxide layer situated on a substrate, comprising:

wet oxidizing the polysilazane-based silicon oxide layer by applying a solution of ammonium hydroxide/hydrogen peroxide followed by a deionized water rinse, wherein at least about 80% of N and H are replaced in an upper 200-1500 Å of the polysilazane layer, as determined by XPS % atomic analysis, SIMS depth profiling analysis, or both.

49. A method of treating a polysilazane-based silicon oxide layer situated on a substrate, comprising:

wet oxidizing the polysilazane-based silicon oxide layer by applying a solution of hydrochloric acid/hydrogen peroxide followed by a deionized water rinse, wherein at least about 80% of N and H are replaced in an upper 200-1500 Å of the polysilazane layer, as determined by XPS % atomic analysis, SIMS depth profiling analysis, or both.

50. A method of treating a polysilazane-based silicon oxide layer situated on a substrate, comprising:

steam oxidizing the polysilazane-based silicon oxide layer in the presence of ozone at a temperature of about 100-200° C. and a pressure of about 0.5-20 atm.

51. A method of treating a polysilazane-based silicon oxide layer situated on a substrate, comprising:

wet oxidizing the polysilazane-based silicon oxide layer in the presence of ozone gas at a temperature of about 100-200° C. and a pressure of about 0.5-20 atm.

52. A method of treating a silicon oxide layer situated on a semiconductor substrate, comprising:

wet oxidizing the silicon oxide layer at a temperature of less than about 100° C. to increase the oxygen concentration, wherein the etch rate of the silicon oxide layer using fluoride-based etchant is less than about 200 Å/minute.

53. The method of claim 52 , wherein the etchant comprises about 0.01-2% HF.

54. The method of claim 52 , further comprising, prior to wet oxidizing, forming the silicon oxide layer by spin coating a polysilazane solution onto the substrate.

55. The method of claim 52 , further comprising, prior to wet oxidizing, forming the silicon oxide layer by spin coating a flowable dielectric on the substrate.

56. The method of claim 55 , wherein wet oxidizing comprises applying deionized water and ozone onto the silicon oxide layer.

57. The method of claim 55 , wherein forming the silicon oxide layer comprises chemical vapor depositing a silane source gas and an oxygen source gas onto the substrate.

58. The method of claim 57 , wherein the flowable dielectric is selected from the group consisting of methyl silsesquioxane, hydrogen silsesquioxane, and silicate.

59. A method of treating a silicon oxide layer, comprising:

wet oxidizing the silicon oxide layer by exposure to water and ozone, wherein at least about 80% of N and H are replaced in an upper 200-1500 Å of the silicon oxide layer, as determined by XPS % atomic analysis, SIMS depth profiling analysis, or both, and the silicon oxide layer has an etch rate of less than about 200 Å/minute in a fluoride-based etchant.

60. A method of treating a silicon oxide layer, comprising:

applying steam in the presence of ozone to the silicon oxide layer, wherein at least about 80% of N and H are replaced in an upper 200-1500 Å of the silicon oxide layer, as determined by XPS %atomic analysis, SIMS depth profiling analysis, or both, and the silicon oxide layer has an etch rate of less than about 200 Å/minute in a fluoride-based etchant.

61. A method of treating a silicon oxide layer, comprising:

wet oxidizing the silicon oxide layer by applying a solution of ammonium hydroxide/hydrogen peroxide followed by a deionized water rinse, wherein at least about 80% of N and H are replaced in an upper 200-1500 Å of the silicon oxide layer, as determined by XPS % atomic analysis, SIMS depth profiling analysis, or both, and the silicon oxide layer has an etch rate of less than about 200 Å/minute in a fluoride-based etchant.

62. A method of treating a silicon oxide layer, comprising:

wet oxidizing the silicon oxide layer by applying a solution of hydrochloric acid/hydrogen peroxide followed by a deionized water rinse, wherein at least about 80% of N and H are replaced in an upper 200-1500 Å of the silicon oxide layer, as determined by XPS % atomic analysis, SIMS depth profiling analysis, or both and the silicon oxide layer has an etch rate of less than about 200 Å/minute in a fluoride-based etchant.

63. A method of treating a silicon oxide layer, comprising:

steam oxidizing the silicon oxide layer in the presence of ozone at a temperature of about 100-200° C. and a pressure of about 0.5-20 atm, wherein at least about 80% of N and H are replaced in an upper 200-1500 Å of the silicon oxide layer, as determined by XPS % atomic analysis, SIMS depth profiling analysis, or both.

64. A method of treating a silicon oxide layer, comprising:

wet oxidizing the silicon oxide layer in the presence of ozone at a temperature of about 100-200° C. and a pressure of about 0.5-20 atm, wherein at least about 80% of N and H are replaced in an upper 200-1500 Å of the silicon oxide layer, as determined by XPS % atomic analysis, SIMS depth profiling analysis, or both.

65. A method of fabricating an isolation region in a substrate, comprising:

forming a shallow trench in the substrate;

forming a polysilazane layer over the substrate and in the trench; and

wet oxidizing the polysilazane layer at a temperature of less than about 100° C. to form a silicon oxide layer having an etch rate of less than about 200 Å/minute in a fluoride-based etchant.

66. The method of claim 65 , wherein forming the polysilazane layer comprises

spin coating a polysilazane solution onto the substrate to fill the trench; and

drying the polysilazane solution to form a solid-phase layer.

67. The method of claim 65 , wherein the trench extends to a depth of less than about 1 micron into the substrate.

68. The method of claim 65 , further comprising planarizing to remove the silicon oxide layer from the substrate and leave silicon oxide remaining within the trench to form a trench isolation region.

69. The method of claim 68 , further comprising forming gate structures adjacent the trench isolation region, the trench isolation region being positioned between the gate structures.

70. The method of claim 69 , wherein the gate structures comprise FET transistors.

71. A method of forming an isolation region within a silicon-comprising substrate, comprising:

forming a masking layer over the silicon-comprising substrate and an opening extending therethrough exposing a portion of the substrate;

etching the exposed portion of the substrate to form an opening extending into the substrate;

removing the masking layer;

spin coating a polysilazane layer onto the substrate and into the opening;

wet oxidizing the polysilazane layer at a temperature of less than about 100° C. to convert the polysilazane layer to a silicon oxide layer having an etch rate of less than about 200 Å/minute in a fluoride-based etchant; and

removing a portion of the silicon oxide layer to an upper surface of the substrate to form an isolation structure within the trench.

72. The method of claim 71 , wherein wet oxidizing comprises applying water and ozone onto the polysilazane layer at a temperature of less than about 100° C. to produce a silicon oxide layer.

73. The method of claim 71 , wherein wet oxidizing comprises applying a solution of ammonium hydroxide/hydrogen peroxide followed by a deionized water rinse.

74. The method of claim 71 , wherein wet oxidizing comprises applying a solution of hydrochloric acid/hydrogen peroxide followed by a deionized water rinse.

75. The method of claim 71 , wherein wet oxidizing comprising applying steam.

76. The method of claim 71 , wherein removing the silicon oxide layer comprises planarizing the silicon oxide layer.

77. A method of forming an isolation region within a silicon-comprising substrate, comprising:

forming a shallow trench within the substrate, the trench having an oxide surface layer;

forming a silicon oxide layer over the oxide layer within the trench by:

spin coating a polysilazane layer onto the substrate and into the trench; and

wet oxidizing the polysilazane layer at a temperature of less than about 100° C. to form a silicon oxide layer having an etch rate of less than about 200 Å/minute in a fluoride-based etchant; and

planarizing the silicon oxide layer to form the isolation region within the trench.

78. A method for filling a trench in a layer situated on a semiconductor substrate, the method comprising:

spin coating a polysilazane layer to at least partially fill the trench; and

wet oxidizing the polysilazane layer at a temperature of less than about 100° C. to convert the polysilazane layer to a silicon oxide layer having an etch rate of less than about 200 Å/minute in a fluoride-based etchant.

79. A method of filling a shallow trench isolation trench with silicon dioxide, comprising:

spin coating a polysilazane layer to at least partially fill the trench; and

wet oxidizing the polysilazane layer at a temperature of less than about 100° C. to convert the polysilazane layer to a silicon oxide layer having an etch rate of less than about 200 Å/minute in a fluoride-based etchant.

80. The method of claim 79 , further comprising planarizing the silicon oxide layer to form an oxide isolation region within the trench.

81. The method of claim 79 , wherein the trench extends to a depth of less than about 1 micron into the substrate.

82. The method of claim 79 , further comprising forming transistors on the substrate, the trench isolation trenches being situated between the transistors.

83. A method of fabricating a semiconductor device, comprising:

depositing a layer of polysilazane onto a material layer; and

processing the polysilazane layer in a wet oxidation by exposure to water and ozone at a temperature of less than about 100° C. to convert the polysilazane layer to a silicon oxide layer having an etch rate of less than about 200 Å/minute in a fluoride-based etchant.

84. A method of forming a semiconductor device, comprising:

forming an opening in a material layer;

depositing a polysilazane material within the opening; and

processing the polysilazane material in a wet oxidation by exposure to water and ozone at a temperature of less than about 100° C. to convert the polysilazane layer to a silicon oxide layer having an etch rate of less than about 200 Å/minute in a fluoride-based etchant.

Assignments (8)

Continuity (1)