Wafer bonding with highly compliant plate having filler material enclosed hollow core
View Patent ↗The present invention discloses a method that includes: providing two wafers; forming raised contacts on the two wafers; aligning the two wafers; bringing together the raised contacts; locally deflecting the two wafers; and bonding the raised contacts. The present invention also discloses a bonded-wafer structure that includes: a first wafer, the first wafer being locally deflected, the first wafer including a first raised contact; and a second wafer, the second wafer being locally deflected, the second wafer including a second raised contact, wherein the second raised contact is bonded to the first raised contact.
1. A method comprising:
providing a first wafer, said first wafer having a first raised contact;
stacking a second wafer over said first wafer, said second wafer and said first wafer being structurally and functionally dissimilar, said second wafer having a second raised contact, said second raised contact facing said first raised contact;
applying different pressure to said first wafer and said second wafer to locally deflect said first wafer and said second wafer wherein said applying pressure is accomplished with a filler material enclosed in a hollow core of a highly compliant plate, said filler material comprising gallium; and
heating said first wafer and said second wafer to bond said first raised contact and said second raised contact.
2. A method comprising:
providing a first wafer, said first wafer having a first raised contact;
stacking a second wafer over said first wafer, said second wafer and said first wafer being structurally and functionally dissimilar, said second wafer having a second raised contact, said second raised contact facing said first raised contact;
applying different pressure to said first wafer and said second wafer to locally deflect said first wafer and said second wafer; and
heating said first wafer and said second wafer to bond said first raised contact and said second raised contact wherein said heating is accomplished with a filler material enclosed in a hollow core of a highly compliant plate, said filler material comprising indium.
3. A method comprising:
providing a first wafer, said first wafer having a first raised contact;
stacking a second wafer over said first wafer, said second wafer and said first wafer being structurally and functionally dissimilar, said second wafer having a second raised contact, said second raised contact facing said first raised contact;
applying different pressure to said first wafer and said second wafer to locally deflect said first wafer and said second wafer wherein said applying pressure is accomplished with a filler material enclosed in a hollow core of a highly compliant plate, said filler material having a low melting point, said filler material comprising gallium; and
heating said first wafer and said second wafer to bond said first raised contact and said second raised contact.
4. A method comprising:
providing a first wafer, said first wafer having a first raised contact;
stacking a second wafer over said first wafer, said second wafer and said first wafer being structurally and functionally dissimilar, said second wafer having a second raised contact, said second raised contact facing said first raised contact;
applying different pressure to said first wafer and said second wafer to locally deflect said first wafer and said second wafer, wherein said applying pressure is accomplished with a filler material enclosed in a hollow core of a highly compliant plate, said filler material comprising gallium; and
heating said first wafer and said second wafer to bond said first raised contact and said second raised contact.
5. A method comprising:
providing a first wafer, said first wafer having a first raised contact;
stacking a second wafer over said first wafer, said second wafer and said first wafer being structurally and functionally dissimilar, said second wafer having a second raised contact, said second raised contact facing said first raised contact;
applying different pressure to said first wafer and said second wafer to locally deflect said first wafer and said second wafer; and
heating said first wafer and said second wafer to bond said first raised contact and said second raised contact, wherein said heating is accomplished with a filler material enclosed in a hollow core of a highly compliant plate, said filler material comprising indium.
6. A method comprising:
providing a first wafer, said first wafer having a first raised contact;
stacking a second wafer over said first wafer, said second wafer and said first wafer being structurally and functionally dissimilar, said second wafer having a second raised contact, said second raised contact facing said first raised contact;
applying different pressure to said first wafer and said second wafer to locally deflect said first wafer and said second wafer, wherein said applying pressure is accomplished with a filler material enclosed in a hollow core of a highly compliant plate, said filler material having a low melting point, said filler material comprising gallium; and
heating said first wafer and said second wafer to bond said first raised contact and said second raised contact.