Enhancement of X-ray reflectometry by measurement of diffuse reflections
A method for inspection of a sample having a surface layer. The method includes acquiring a first reflectance spectrum of the sample while irradiating the sample with a collimated beam of X-rays, and processing the first reflectance spectrum to measure a diffuse reflection property of the sample. A second reflectance spectrum of the sample is acquired while irradiating the sample with a converging beam of the X-rays. The second reflectance spectrum is analyzed using the diffuse reflection property so as to determine a characteristic of the surface layer of the sample.
1. A method for inspection of a sample having a surface layer, the method comprising:
acquiring a first reflectance spectrum of the sample while irradiating the sample with a collimated beam of X-rays;
processing the first reflectance spectrum to measure a diffuse reflection property of the sample;
acquiring a second reflectance spectrum of the sample while irradiating the sample with a converging beam of the X-rays; and
analyzing the second reflectance spectrum using the diffuse reflection property so as to determine a characteristic of the surface layer of the sample.
2. The method according to claim 1 , wherein acquiring the first reflectance spectrum comprises passing a converging beam through a slit so as to collimate the beam.
3. The method according to claim 1 , wherein acquiring the first reflectance spectrum comprises irradiating the sample with the collimated beam at a predetermined incidence angle, and receiving the X-rays simultaneously over a range of elevation angles using a detector array.
4. The method according to claim 3 , wherein acquiring the second reflectance spectrum comprises receiving the X-rays simultaneously over the range of elevation angles using the detector array that was also used in acquiring the first reflectance spectrum.
5. The method according to claim 1 , wherein processing the first reflectance spectrum comprises detecting a Yoneda wing in the first reflectance spectrum.
6. The method according to claim 5 , wherein detecting the Yoneda wing comprises determining a critical angle for total external reflection from the sample responsively to an angular location of the Yoneda wing.
7. The method according to claim 5 , wherein detecting the Yoneda wing comprises determining a measure of roughness of the surface layer responsively to an amplitude of the Yoneda wing.
8. The method according to claim 1 , wherein analyzing the second reflectance spectrum comprises estimating a diffuse reflection background responsively to the first reflectance spectrum, and subtracting the diffuse reflection background from the second reflectance spectrum.
9. The method according to claim 1 , wherein analyzing the second reflectance spectrum comprises determining at least one of a density, a thickness and a surface roughness of the surface layer.
10. The method according to claim 1 , wherein the sample comprises a semiconductor wafer, and wherein analyzing the second reflectance spectrum comprises determining a quality of a thin film layer formed on the wafer.
11. Apparatus for inspection of a sample having a surface layer, the apparatus comprising:
a radiation source, which is adapted to direct a collimated beam of X-rays toward a surface of the sample in a first configuration of the apparatus, and to direct a converging beam of the X-rays toward the surface of the sample in a second configuration of the apparatus;
a detector assembly, which is arranged to sense the X-rays reflected from the surface so as to generate first and second reflectance spectra as a function of elevation angle relative to the surface in the first and second configurations, respectively; and
a signal processor, which is coupled to receive and process the first reflectance spectrum so as to measure a diffuse reflection property of the sample, and to analyze the second reflectance spectrum using the diffuse reflection property so as to determine a characteristic of the surface layer of the sample.
12. The apparatus according to claim 11 , wherein the radiation source comprises an arrangement including a slit, which is introduced into a converging beam produced by the radiation source so as to collimate the beam in the first configuration.
13. The apparatus according to claim 11 , wherein the detector assembly comprises a detector array, which is configured to receive the reflected X-rays simultaneously over a range of elevation angles in both the first and second configurations.
14. The apparatus according to claim 11 , wherein the signal processor is adapted to process the first reflectance spectrum so as to detect a Yoneda wing in the first reflectance spectrum.
15. The apparatus according to claim 14 , wherein the signal processor is adapted to determine a critical angle for total external reflection from the sample responsively to an angular location of the Yoneda wing.
16. The apparatus according to claim 14 , wherein the signal processor is adapted to determine a measure of roughness of the surface layer responsively to an amplitude of the Yoneda wing.
17. The apparatus according to claim 11 , wherein the signal processor is adapted to estimate a diffuse reflection background responsively to the first reflectance spectrum, and to subtract the diffuse reflection background from the second reflectance spectrum.
18. The apparatus according to claim 11 , wherein the signal processor is adapted to analyze the second reflectance spectrum so as to determine at least one of a density, a thickness and a surface roughness of the surface layer.
19. The apparatus according to claim 11 , wherein the sample comprises a semiconductor wafer, and wherein the signal processor is adapted to analyze the second reflectance spectrum comprises so as to determine a quality of a thin film layer formed on the wafer.
20. A cluster tool for producing microelectronic devices, comprising:
a deposition station, which is adapted to deposit a thin-film layer on a surface of a semiconductor wafer; and
an inspection station, comprising:
a radiation source, which is adapted to direct a collimated beam of X-rays toward the surface of the wafer in a first configuration of the inspection station, and to direct a converging beam of the X-rays toward the surface of the wafer in a second configuration of the inspection station;
a detector assembly, which is arranged to sense the X-rays reflected from the surface so as to generate first and second reflectance spectra as a function of elevation angle relative to the surface in the first and second configurations, respectively; and
a signal processor, which is coupled to receive and process the first reflectance spectrum so as to measure a diffuse reflection property of the surface, and to analyze the second reflectance spectrum using the diffuse reflection property so as to determine a characteristic of the thin-film layer.
21. Apparatus for producing microelectronic devices, comprising:
a production chamber, which is adapted to receive a semiconductor wafer;
a deposition device, which is adapted to deposit a thin-film layer on a surface of the semiconductor wafer within the chamber;
a radiation source, which is adapted to direct a collimated beam of X-rays toward the surface of the wafer in the production chamber in a first configuration of the source, and to direct a converging beam of the X-rays toward the surface of the wafer in the production chamber in a second configuration of the source;
a detector assembly, which is arranged to sense the X-rays reflected from the surface of the wafer in the production chamber so as to generate first and second reflectance spectra as a function of elevation angle relative to the surface in the first and second configurations, respectively; and
a signal processor, which is coupled to receive and process the first reflectance spectrum so as to measure a diffuse reflection property of the surface, and to analyze the second reflectance spectrum using the diffuse reflection property so as to determine a characteristic of the thin-film layer.