Further method to pattern a substrate

1. A method of lithography for enhancing uniformity of critical dimensions of features patterned onto a workpiece coated with a layer sensitive to an energy beam, using the energy beam and a multipass writing strategy, the method including:

determining individual doses for writing passes so that the passes will affect said coating substantially equally, thereby enhancing said uniformity of critical dimensions of features;

exposing said coating using the multipass writing strategy, applying the individual doses in the writing passes; and

developing said coating.

2. The method according to claim 1 , further including:

creating said features by a spatial light modulator.

3. The method according to claim 1 , wherein said energy beam is a pulsed radiation in the range of EUV-DUV.

4. The method according to claim 1 , further including creating said features by a modulator and deflector arrangement capable of deflecting and setting the intensity of said radiation beam.

5. The method according to claim 1 , further including creating said features by a diffraction grating.

6. The method according to claim 1 , wherein said method includes two exposure passes, of which a first exposure pass has a dose less than half of an exposure threshold and a second exposure pass has a dose greater than half of the exposure threshold.

7. The method according to claim 1 , wherein said method includes three exposure passes or more, of which said dose is increased linearly for following passes.

8. The method according to claim 1 , wherein said method includes three exposure passes or more, of which said dose is increased exponentially for following passes.

9. The method according to claim 1 , wherein said method includes three exposure passes or more, of which said dose is increased logarithmically for following passes.

10. The method according to claim 1 , wherein each portion of said workpiece is patterned with a first exposure pass before exposing a next exposure passes.

11. The method according to claim 10 , wherein said portions are exposed in the same direction.

12. The method according to claim 10 , wherein said portions are exposed in alternating directions.

13. The method according to claim 1 , wherein the dose of the last exposure is within the range of 40% to 60% higher than the first exposure.

14. The method according to claim 1 , wherein the dose of the last exposure is within the range of 45% to 55% higher than the first exposure.

15. The method according to claim 1 , wherein the coating sensitive to electromagnetic radiation is a chemically amplified resist (CAR).

16. The method according to claim 1 , wherein said workpiece is a mask substrate.

17. The method according to claim 1 , wherein said workpiece is a wafer.

18. The method according to claim 13 , wherein four writing passes are used.

19. A method of producing a mask or reticle, according to claim 1 , further wherein the workpiece is the mask or reticle, further including patterning the workpiece after developing the coating.

20. A method of producing a layer of a device structure, according to claim 1 , further wherein the workpiece is a wafer, further including patterning the workpiece after developing the coating.

21. A method of producing precise structures on a second workpiece according to claim 1 , wherein the workpiece of claim 1 is a mask or reticle, further including:

exposing a layer of radiation sensitive material on the second workpiece using the mask or reticle; and

patterning a layer of a device structure on the second workpiece using the exposed layer on the second workpiece.