MRAM with magnetic via for storage of information and field sensor

1. A magnetic memory element comprising:

a magnetic via for storing information made of a magnetic material and being vertically oriented relative to a wafer surface, the magnetic via having a magnetic anisotropy with its magnetization vector being magnetically coupled to at least one current line; and

a magnetic sensor element for sensing magnetization of the magnetic via comprising at least one magnetic layer having a magnetization vector being magnetically coupled to the magnetization vector of the magnetic via, the magnetic sensor element being conductively connected to the at least one current line.

2. The magnetic memory element of claim 1 , wherein the magnetic sensor element is arranged to be spatially distanced from the magnetic via.

3. The magnetic memory element of claim 1 , wherein the magnetic sensor element is conductively coupled to a selection device.

4. The magnetic memory element of claim 3 , comprising an electrical series connection comprising the at least one current line, the magnetic sensor element, the magnetic via and the selection device.

5. The magnetic memory element of claim 1 , wherein the magnetic sensor element is conductively coupled to two current lines, one of which being a bit line and the other one being a word line.

6. The magnetic memory element of claim 5 , comprising an electrical series connection comprising the word line, the magnetic sensor element, the magnetic via and the bit line.

7. The magnetic memory element of claim 1 , comprising a first current line and a second current line, the second current line being split into two parts, wherein the magnetic via being positioned in between the split two parts of the second current line.

8. The magnetic memory element of claim 7 , wherein the split two parts of the second current line being spaced apart from each other to have a distance which is at most equal to a minimum lithographic feature size F.

9. The magnetic memory element of claim 1 , wherein the magnetic sensor element is positioned to be horizontally shifted as to the magnetic via.

10. The magnetic memory element of claim 1 , wherein the magnetic sensor element is positioned to be in a stacked relationship as to the magnetic via.

11. The magnetic memory element of claim 1 , wherein the magnetic anisotropy of the magnetic via is oriented substantially perpendicular relative to the wafer surface.

12. The magnetic memory element of claim 1 , wherein the magnetic layer of the magnetic sensor element is substantially parallel relative to the wafer surface.

13. A magnetic memory element comprising:

a magnetic via for storing information made of a magnetic material and being vertically oriented relative to a wafer surface, the magnetic via having a magnetic anisotropy with its magnetization vector being magnetically coupled to at least one current line; and

a magnetic sensor element for sensing magnetization of the magnetic via comprising at least one magnetic layer having a magnetization vector being magnetically coupled to the magnetization vector of the magnetic via, the magnetic sensor element being conductively connected to the at least one current line, wherein the magnetic sensor element is a magnetic tunnel junction comprising two magnetic layers of magnetic material stacked in parallel, overlying relationship and separated by a layer of nonmagnetic material.

14. The magnetic memory element of claim 13 , wherein magnetization vectors of the magnetic layers of the magnetic tunnel junction are oriented substantially perpendicular to the magnetic layers.

15. The magnetic memory element of claim 13 , wherein an aspect ratio of the at least one magnetic layer of the magnetic storage element is larger than 1, and particularly is in the range of from 1.5 to 3.

16. The magnetic memory element of claim 13 , wherein an aspect ratio of the magnetic layer of the magnetic sensor element is in the range of from 1 to 2.

17. The magnetic memory element of claim 13 , wherein the magnetic memory element is realized in about 8 F 2 structure size.

18. The magnetic memory element of claim 13 , wherein the magnetic sensor element is realized in about 1 F 2 structure size.

19. A magnetic random access memory device comprising:

a plurality of magnetic memory elements, at least one memory element including a magnetic via for storing information made of a magnetic material and being vertically oriented relative to a wafer surface, the magnetic via having a magnetic anisotropy with its magnetization vector being magnetically coupled to at least one current line, and a magnetic sensor element for sensing magnetization of the magnetic via comprising at least one magnetic layer having a magnetization vector being magnetically coupled to the magnetization vector of the magnetic via, the magnetic sensor element being conductively connected to the at least one current line.

20. The memory of claim 19 , wherein the magnetic sensor element is arranged to be spatially distanced from the magnetic via.

21. The memory of claim 19 , comprising an electrical series connection comprising the at least one current line, the magnetic sensor element, the magnetic via and the selection device.

22. The magnetic memory element of claim 19 , comprising a first current line and a second current line, the second current line being split into two parts, wherein the magnetic via being positioned in between the split two parts of the second current line.